A semiconductor structure includes packaging structures and a substrate. Each packaging structure includes a light-transmitting layer, micro-LED chips, a first insulating layer, redistribution layers, a second insulating layer, and conductive pieces. The micro-LED chips are on the light-transmitting layer and include an electrode surface and a light-emitting surface facing the light-transmitting layer. The first insulating layer is disposed on the light-transmitting layer and surrounds the micro-LED chips. The redistribution layers are disposed on the first insulating layer and pass through the first insulating layer to be electrically connected to the electrode surfaces. The second insulating layer is disposed on the first insulating layer. The conductive pieces are disposed on the second insulating layer, pass through the second insulating layer to be electrically connected to the redistribution layers, and are between the substrate and the micro-LED chips.

A light emitting element, display device, a method for manufacturing the same and an electronic device are provided. A light emitting element includes: a first element rod including a first semiconductor layer and an active layer that are sequentially stacked, and a side surface having a first inclination angle; a second element rod including a second semiconductor layer, and a side surface having a second inclination angle; a first contact electrode on the first element rod; and a second contact electrode having one surface on one surface of the second element rod and a portion of the side surface of the second element rod.

A method for manufacturing an optoelectronic device. The method first comprises the provision of a stack comprising a substrate, the upper face of which extends along a longitudinal plane, a first diode and a second diode separated in pairs by a trench. Then, in the trench, a mirror is formed, having a first flank and a second flank oriented respectively facing the first diode and the second diode, each forming a reflection interface for light emitted or received by the diodes, such that the reflection interfaces each form a reflection angle with the longitudinal plane, measured in the mirror, less than 89.

A Micro LED display chip and a method for forming the same are provided. The method includes: forming a base including light emitting mesas arranged in an array; forming a passivation layer on a sidewall surface of each light emitting mesa and a surface of the base, and the passivation layer exposes a top surface of each light emitting mesa; and forming a light reflection layer on the top surface of each light emitting mesa and on a part or whole of the passivation layer on the sidewall surface of each light emitting mesa. A light reflectivity of a material of the light reflection layer is greater than or equal to a preset light reflectivity threshold, which can improve a light emission rate and a brightness of the Micro LED display chip.

The disclosure provides a semiconductor structure and a method for manufacturing thereof. The semiconductor structure includes a substrate, a light-emitting pixel layer on the substrate, and reflective parts. The substrate includes a first surface and a second surface opposite to the first surface, the first surface includes a convex parts, and each of the convex parts protrudes in a direction away from the second surface; the light-emitting pixel layer includes at least one light-emitting pixel including a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially disposed on the second surface, and conductivity types of the first semiconductor layer and the second semiconductor layer are opposite; and the reflection parts are conformally formed on the convex parts, and the reflection parts and the convex parts are in one-to-one correspondence in position.

Micro-LED structures include an LED epilayer that may be formed before the micro-LED structure is coupled to a backplane substrate. In order to prevent light leakage and maximize light output, the sidewalls and other surfaces of the LED epilayer may be coated with a reflective coating. For example, the reflective coating may include a metal layer that is electrically insulated between dielectric layers from the micro-LED electrodes. The reflective coating may also be formed using multiple layers in a distributed Bragg reflector configuration. This reflective coating may be formed during the LED fabrication process before the micro-LED structure is coupled to the backplane. The pixel isolation structures on the backplane may also include a reflective coating that is applied above the LED epilayers.

The present application discloses a manufacturing method for a display module and a display screen. The method includes: forming a semiconductor device by pre-processing a semiconductor epitaxial wafer; forming a first transparent layer on a substrate surface of the semiconductor device; forming a first opening exposing the substrate by etching the first transparent layer; forming a first quantum dot layer on the substrate surface exposed by the first opening and the surface of the first transparent layer; etching away the first quantum dot layer in the outer region of the first opening, and remaining the first quantum dot layer inside the first opening; and forming a DBR film layer that filters blue light.

Micro-LED structures include an LED epilayer that may be formed before the micro-LED structure is coupled to a backplane substrate. In order to prevent light leakage and maximize light output, the sidewalls and other surfaces of the LED epilayer may be coated with a reflective coating. For example, the reflective coating may include a metal layer that is electrically insulated between dielectric layers from the micro-LED electrodes. The reflective coating may also be formed using multiple layers in a distributed Bragg reflector configuration. This reflective coating may be formed during the LED fabrication process before the micro-LED structure is coupled to the backplane. The pixel isolation structures on the backplane may also include a reflective coating that is applied above the LED epilayers.

A packaging structure is provided. The packaging structure includes a dielectric layer, a redistribution layer, a plurality of light-emitting elements, a photodegradation prevention layer, and a cover layer. The redistribution layer is disposed on the dielectric layer. The plurality of light-emitting elements is disposed on the redistribution layer and electrically connected to the redistribution layer. The photodegradation prevention layer is disposed on the dielectric layer and surrounds the plurality of light-emitting elements. The cover layer is disposed on the plurality of light-emitting elements and the photodegradation prevention layer. The area of the photodegradation prevention layer accounts for at least 50% of the area of the cover layer.

A light-emitting apparatus includes a light emitting device, a set of transmissive optical elements, and a side wall coating layer forming a rigid spacer. The set of optical elements is positioned with its back optics surface facing and spaced apart from the front device surface. Device output light emitted from light-emitting areas of the front device surface propagates to and through the optical elements. The space between the front device surface and the back optics surface, through which the device output light propagates, is either evacuated or filled with ambient air or inert gas. The side wall coating layer, on side surfaces of the light-emitting device or on side surfaces of multiple light-emitting elements thereof, extends beyond the front device surface to form the spacer, which leaves unobstructed at least portions of the one or more light-emitting areas of the front device surface.