A power semiconductor device includes a substrate including SiC of a first conductivity type and including a first region and a second region, a drift layer of the first conductivity type on the substrate and in the first and second regions, a well region of a second conductivity type on the drift layer and in in the first region, a source region of the first conductivity type within the well region, a gate electrode on and extending along an upper surface of the well region, a source electrode connected to the source region in the first region, a metal layer connected to the drift layer in the second region, and a passivation layer covering the source electrode and the metal layer. The passivation layer defines a recessed portion between the first region and the second region.

Integrated bilateral switch power device based on gallium nitride, including a die integrating a first and a second switch FET transistor, and a substrate-biasing network configured to electrically couple the substrate node selectively to the source region of the first and the second switch FET transistors which is at a lower potential. The substrate-biasing network has a first and second diode coupled in anti-series and formed by field effect, diode-connected transistors having the same structure as the first and the second switch FET transistors in the same conduction, contact and gate layers.