A semiconductor device includes a semiconductor substrate, a temperature sensing diode provided on the semiconductor substrate, and a protective diode provided on the semiconductor substrate and connected in inverse parallel to the temperature sensing diode, wherein the temperature sensing diode includes a first anode layer that is a p-type semiconductor layer, and a first cathode layer that is adjacent to the first anode layer in plan view and is an n-type semiconductor layer, the protective diode includes a second anode layer that is a p-type semiconductor layer, and a second cathode layer that is adjacent to the second anode layer in plan view and is an n-type semiconductor layer, and a pn junction area of the second anode layer and the second cathode layer in the protective diode is larger than a pn junction area of the first anode layer and the first cathode layer in the temperature sensing diode.

A stack includes a first power semiconductor device in a first chip and a second power semiconductor device in a second chip. The first power semiconductor device is configured for active operation during which an application load current is conducted by the first power semiconductor device and power losses occur in the first power semiconductor device. The second power semiconductor device is configured for passive operation during which a voltage is blocked. The stack further includes a heat sink interface configured to dissipate the power losses. The second chip is arranged between the first chip and the heat sink interface.

A semiconductor package is provided. The semiconductor package may include a housing; a semiconductor chip, disposed within the housing; a top connector, connected to the semiconductor chip; a leadframe, coupled to the top connector; and a temperature sensor chip, disposed on the top connector.

A semiconductor device includes: a first transformer; a second transformer; a first rectifier chip; a second rectifier chip; and a first frame. Each of the first rectifier chip and the second rectifier chip includes: a first output pad and a second output pad; a semiconductor substrate of a first conductivity type including a first surface; a first semiconductor region of a second conductivity type disposed on the first surface; a first transistor provided in the first semiconductor region and electrically connected to the first output pad; and a second semiconductor region of the second conductivity type provided at a position spaced apart from the first transistor in the first semiconductor region and electrically connected to the second output pad. The second semiconductor region is in contact with the semiconductor substrate. The first rectifier chip and the second rectifier chip are disposed to be spaced apart from each other.

A bypass diode assembly and a method for fabricating the bypass diode assembly are provided, the bypass diode assembly comprising an electrically insulating tape, an electrically conductive ribbon extending over the back side of the tape and locally exposed at the front side of the tape through an opening, a semiconductor component positioned in a hole through the tape, wherein the semiconductor component comprises a diode electrically connected between a first contact pad of the semiconductor component in electrical contact with the electrically conductive ribbon and a second contact pad of the semiconductor component, and an electrically conductive ribbon portion on the front side of the tape in electrical contact with the second contact pad of the semiconductor component. The electrically conductive ribbon portion is electrically isolated from the first electrically conductive ribbon by the electrically insulating tape. A photovoltaic module comprising at least one bypass diode assembly is provided.

A power semiconductor device includes a plurality of power modules. Outer shapes of packages of the plurality of power modules are the same. The plurality of power modules include a first half-bridge module made of a first semiconductor, and at least one of a second half-bridge module made of a second semiconductor, a second relay module made of a second semiconductor, and a second diode module made of a second semiconductor.

A semiconductor device includes: a substrate and backward and forward diodes. Each backward diodes includes: a first channel layer; a first barrier layer; a first gate electrode; a first gate semiconductor layer; and a first source electrode and a first drain electrode that are disposed at opposite sides of the first gate electrode. The forward diode includes: a second channel layer; a second barrier layer; a second gate electrode; a second gate semiconductor layer; and a second source electrode and a second drain electrode that are disposed at opposite sides of the second gate electrode. The second source electrode is connected to the second gate electrode, and a first drain electrode of the backward diodes is connected with a second source electrode of the forward diode. The band gaps of the first (second) channel layer and the first (second) barrier layers are different.

A semiconductor module includes: a board that includes a wiring portion formed on at least one surface and a hole portion having an opening on the at least one surface side; and a body portion that is disposed on one surface side of the board and is sealed by a resin, and a lead portion having a plate shape that extends toward an outside from a side surface of the body portion. In at least one semiconductor package, a part of the body portion is inserted into the hole portion, and the lead portion extends along a surface of the board, and a lower surface of the lead portion is bonded to the wiring portion.