A multifunctional imaging device is provided. The imaging device includes first to fourth light-receiving elements and first and second functional layers. The first to fourth light-receiving elements are photoelectric conversion elements having sensitivity to light of different wavelengths from each other. The first and second functional layers each include first and second transistors. The first functional layer and the fourth to first light-receiving elements are stacked in this order over the second functional layer. In each of the first to fourth light-receiving elements, a first conductive layer, a first buffer layer, a photoelectric conversion layer, a second buffer layer, and a second conductive layer are stacked in this order. The photoelectric conversion layer includes an organic compound, and the first buffer layer and the second buffer layer each include a metal or an organic compound. The first transistor is electrically connected to the first conductive layer of any of the first to fourth light-receiving elements. The second transistor is electrically connected to the first transistor.

A multifunctional imaging device is provided. The imaging device includes first to fourth light-receiving elements and first and second functional layers. The first to fourth light-receiving elements are photoelectric conversion elements having sensitivity to light of different wavelengths from each other. The first and second functional layers each include first and second transistors. The first functional layer and the fourth to first light-receiving elements are stacked in this order over the second functional layer. In each of the first to fourth light-receiving elements, a first conductive layer, a first buffer layer, a photoelectric conversion layer, a second buffer layer, and a second conductive layer are stacked in this order. The photoelectric conversion layer includes an organic compound, and the first buffer layer and the second buffer layer each include a metal or an organic compound. The first transistor is electrically connected to the first conductive layer of any of the first to fourth light-receiving elements. The second transistor is electrically connected to the first transistor.

A semiconductor device may include a semiconductor substrate including a cell array area, an extension area, and a pad area; a first stacked structure on the cell array area and the extension area, the first stacked structure including first conductive layers and first insulating layers alternately stacked; an input/output pad on an upper end portion of the pad area; a second stacked structure on a lower side of the input/output pad and including a plurality of second conductive layers and a plurality of second insulating layers alternately stacked on the pad area; a plurality of through wiring structures respectively connected to the plurality of second conductive layers on the pad area; and a mold insulator between the input/output pad and the second stacked structure such that the input/output pad and the second stacked structure may be vertically spaced apart from each other.

A semiconductor device may include a semiconductor substrate including a cell array area, an extension area, and a pad area; a first stacked structure on the cell array area and the extension area, the first stacked structure including first conductive layers and first insulating layers alternately stacked; an input/output pad on an upper end portion of the pad area; a second stacked structure on a lower side of the input/output pad and including a plurality of second conductive layers and a plurality of second insulating layers alternately stacked on the pad area; a plurality of through wiring structures respectively connected to the plurality of second conductive layers on the pad area; and a mold insulator between the input/output pad and the second stacked structure such that the input/output pad and the second stacked structure may be vertically spaced apart from each other.

A semiconductor package includes a rewiring structure, a first chip on the rewiring structure, a first adhesive layer on an upper surface of the first chip, a first seed layer on an upper surface of the first adhesive layer, a first metal layer on a side surface of the first chip, a first conductive pillar on the rewiring structure and spaced apart from the first metal layer in a first horizontal direction, a second chip on an upper surface of the first seed layer, and offset stacked from the first chip in the first horizontal direction, and a second adhesive layer on an upper surface of the second chip, wherein the first conductive pillar overlaps the second chip in a vertical direction, and a portion of the first seed layer is disposed between the first conductive pillar and the second chip.

A semiconductor package includes a rewiring structure, a first chip on the rewiring structure, a first adhesive layer on an upper surface of the first chip, a first seed layer on an upper surface of the first adhesive layer, a first metal layer on a side surface of the first chip, a first conductive pillar on the rewiring structure and spaced apart from the first metal layer in a first horizontal direction, a second chip on an upper surface of the first seed layer, and offset stacked from the first chip in the first horizontal direction, and a second adhesive layer on an upper surface of the second chip, wherein the first conductive pillar overlaps the second chip in a vertical direction, and a portion of the first seed layer is disposed between the first conductive pillar and the second chip.

Memory systems and methods of assembly are described in which a memory system includes a routing substrate, a processor on a first side of the routing substrate, a memory die stack on the first side of the routing substrate, and a buffer bridge die embedded in the routing substrate and electrically connecting the memory die stack with the processor.

Memory systems and methods of assembly are described in which a memory system includes a routing substrate, a processor on a first side of the routing substrate, a memory die stack on the first side of the routing substrate, and a buffer bridge die embedded in the routing substrate and electrically connecting the memory die stack with the processor.

Methods, systems, and devices for backside power delivery to logic of a memory architecture are described. A semiconductor system may implement logic chips stacked above stacks of memory chips, where the stacks of memory chips are positioned above circuitry associated with providing power to the semiconductor system. The semiconductor system may include a dielectric layer above the logic chips including conductive channels. For example, the circuitry may deliver power to the logic chips based on transferring power along power delivery vias to the conductive channels which may provide the power to the logic chips. In some examples, a front side of the logic chips may be bonded with a backside of the stacks of memory chips, and a backside of the logic chips may be bonded with the conductive channels, such that power is delivered to the backside of the logic chips.

Methods, systems, and devices for backside power delivery to logic of a memory architecture are described. A semiconductor system may implement logic chips stacked above stacks of memory chips, where the stacks of memory chips are positioned above circuitry associated with providing power to the semiconductor system. The semiconductor system may include a dielectric layer above the logic chips including conductive channels. For example, the circuitry may deliver power to the logic chips based on transferring power along power delivery vias to the conductive channels which may provide the power to the logic chips. In some examples, a front side of the logic chips may be bonded with a backside of the stacks of memory chips, and a backside of the logic chips may be bonded with the conductive channels, such that power is delivered to the backside of the logic chips.