Methods, systems, and devices for multiple-stack memory system with integrated cooling unit are described. A multiple-stack memory system may include a first memory device that comprises a first logic die and a first stack of memory dies. The multiple-stack memory system may include a second memory device that comprises a second logic die and a second stack of memory dies. A cooling unit of the multiple-stack memory system may be coupled with a bottom memory die of the first stack of memory dies and coupled with a top memory die of the second stack of memory dies.

A semiconductor package according to an embodiment includes a first insulating layer; a first circuit pattern disposed on the first insulating layer and including a first pad; a first molding layer disposed on an upper surface of the first insulating layer; a through electrode including a first conductive coupling part disposed on the first pad and having a first width and a through part disposed on the first conductive coupling part and having a second width smaller than the first width, and passing through of the first molding layer; and a second conductive coupling part disposed on the through part of the through electrode; wherein the first width of the first conductive coupling part is smaller than a third width of the second conductive coupling part.

A circuit board according to an embodiment includes an insulating layer; a pad disposed on the insulating layer; and a protective layer disposed on the insulating layer and including a recess portion vertically overlapping with the pad, wherein the protective layer includes a first portion including a first part of the recess portion; and a second portion disposed on the first portion and including a second part of the recess portion connected to the first portion, and wherein a width of the second part of the recess portion is greater than a width of the first part of the recess portion.

A method for manufacturing a semiconductor module that includes a plurality of chips includes a first chip arrangement step for arranging a first chip; a rewiring layer formation step for forming a rewiring layer that is disposed on one surface side of the first chip and that is electrically connected to a second chip; a second chip arrangement step for arranging the second chip on the other surface side of the rewiring layer, the other surface side being opposite to the rewiring layer surface facing the first chip, at a position overlapping the first chip in the opposing direction; a pillar formation step for forming a pillar that extends from the other surface of the rewiring layer; and a substrate arrangement step for arranging a substrate that is electrically connected to the pillar and the second chip.

Provided is a semiconductor package including a glass core interposer including a glass core substrate, a plurality of through electrodes penetrating the glass core substrate, a first insulating layer at least partially covering each of an upper surface and a lower surface of the glass core substrate, a second insulating layer at least partially surrounding the first insulating layer and the glass core substrate, and an upper redistribution layer on an upper surface of the second insulating layer, and a first semiconductor device on an upper surface of the glass core interposer, wherein the first insulating layer is free of filler, and the second insulating layer includes filler.

Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly includes a first substrate having first electrical traces and a second substrate having second electrical traces, where the second electrical traces are electrically coupled with the first electrical traces using at least one wire bond. The semiconductor device assembly includes an integrated circuit between the first substrate and the second substrate, where the integrated circuit is electrically coupled with the first electrical traces using at least one conductive structure.

Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly includes a first substrate having first electrical traces and a second substrate having second electrical traces, where the second electrical traces are electrically coupled with the first electrical traces using at least one wire bond. The semiconductor device assembly includes an integrated circuit between the first substrate and the second substrate, where the integrated circuit is electrically coupled with the first electrical traces using at least one conductive structure.

According to one aspect of the disclosure, there is provided an integrated circuit die includes: a substrate; a head structure including a first device layer in a head side of the substrate, a first wiring layer on the first device layer, and a first passivation layer on the first wiring layer, and a tail structure including a second device layer in a tail side of the substrate opposite to the head side, a second wiring layer on the second device layer, and a second passivation layer on the second wiring layer, wherein the tail structure is horizontally symmetrical to the head structure at least partially in view of an integrated circuit layout perspective.

According to one aspect of the disclosure, there is provided an integrated circuit die includes: a substrate; a head structure including a first device layer in a head side of the substrate, a first wiring layer on the first device layer, and a first passivation layer on the first wiring layer, and a tail structure including a second device layer in a tail side of the substrate opposite to the head side, a second wiring layer on the second device layer, and a second passivation layer on the second wiring layer, wherein the tail structure is horizontally symmetrical to the head structure at least partially in view of an integrated circuit layout perspective.

A semiconductor device assembly including a first semiconductor die having a first dielectric region and a first bond pad that are disposed on a first side of the first semiconductor die, and a second semiconductor die having a second dielectric region and a second bond pad that are disposed on a second side of the second semiconductor die, wherein a hybrid bonding interface between the first side of the first semiconductor die and the second side of the second semiconductor die includes a conductive region between the first bond pad and the second bond pad, and wherein the conductive region and at least one of the first and the second bond pads include a same conductive material element, and the conductive region has an electrical resistivity lower than the at least one of the first and the second bond pads.