H10H20/8131

RGB monolithic integrated high purity microLED display device

A colour conversion resonator system, comprising: a first partially reflective region configured to transmit light of a first primary peak wavelength and to reflect light of a second primary peak wavelength; a second partially reflective region configured to at least partially transmit light of the first and second primary peak wavelengths and to reflect light of a third primary peak wavelength; a third partially reflective region configured to at least partially reflect light with the third primary peak wavelength; a first colour conversion resonator cavity arranged to receive input light with the first primary peak wavelength through the first partially reflective region and to convert at least some of the light of the first primary peak wavelength to provide light of the second primary peak wavelength, wherein the first colour conversion resonator cavity is arranged such that the second primary peak wavelength resonates in the first colour conversion resonator cavity and resonant light with the second primary peak wavelength is output through the second partially reflective region; and a second colour conversion resonator cavity arranged to receive input light comprising the second primary peak wavelength through the second partially reflective region and to convert at least some of the second primary peak wavelength to provide light of the third primary peak wavelength, wherein the second colour conversion resonator cavity is arranged such that the third primary peak wavelength resonates in the second colour conversion resonator cavity and resonant light with the third primary peak wavelength is output through the third partially reflective region, wherein the first colour conversion resonator cavity and the second resonator cavity are arranged partially to overlap to provide a non-overlapping portion and an overlapping portion thereby to define a first light emitting surface and a second light emitting surface respectively, wherein the first light emitting surface is arranged to provide resonant light of the second primary peak wavelength and the second light emitting surface is arranged to provide resonant light of the third primary peak wavelength.

LED display device, method of controlling the same, and method of manufacturing an LED display device

A display device comprises a light emitting diode (LED) which includes a porous semiconductor material, wherein the device comprises a pixel comprising a plurality of subpixels each having a light-emitting layer. A first subpixel has a first light-emitting layer having a first area A1, and a second subpixel has a second light-emitting layer having a second area A2 different from the first area A1. The first subpixel is configured to emit at a first peak wavelength, and the second subpixel is configured to emit at a second peak wavelength different from the first peak wavelength. A method of controlling this display device and a method of manufacturing said display device are also provided.

LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE ARRAY AND METHOD OF MANUFACTURING A LIGHT-EMITTING DIODE DIE
20260090141 · 2026-03-26 · ·

Provided is an LED (100) comprised of an epitaxial stack having two active regions (106a, 106b) separated by a tunnel junction (108). A red converting element (112) may be added selectively to pixels during device isolation/processing to create an array of pixels that can be controlled to be blue or green or a mix of the two, and other pixels that use the blue or green active regions to pump the red converting element (112) to stimulate red emission from this specific pixel area. An alternative can be during device processing to selectively remove the topmost active region (green or blue) and replace that with a red converting material. This could permit a coplanar final structure.

Light emitting device for display and display apparatus having the same

A display apparatus including a circuit board, pixels arranged on the circuit board, and a light blocking material covering one of the pixels, in which at least one of the pixels includes a first light emitting device and a second light emitting device spaced apart from each other, the first light emitting device includes a first LED stack configured to generate light having a first peak wavelength and a first bump pad, the second light emitting device includes a second LED stack configured to generate light having a second peak wavelength and a second bump pad, and the first light emitting device includes a first side surface having a region inclined at a first inclined angle, and the second light emitting device includes a second side surface facing the first side surface and having a region inclined at a second inclined angle different from the first inclined angle.

LIGHT-EMITTING DEVICE, DISPLAY APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME

Provided is a display apparatus including a light-emitting structure in which a first light-emitting element, a second light-emitting element, and a third light-emitting element, a first electrode pattern electrically connected to a p-type semiconductor layer of the first light-emitting element, a p-type semiconductor layer of the second light-emitting element, and a p-type semiconductor layer of the third light-emitting element, and a second electrode pattern electrically connected to a n-type semiconductor layer of the first light-emitting element, a n-type semiconductor layer of the second light-emitting element, and a n-type semiconductor layer of the third light-emitting element.

LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE HAVING THE SAME

A light-emitting element includes first, second, and third light-emitting structures sequentially stacked on a substrate and configured to emit blue light, green light, and red light, respectively. Each of the first, second, and third light-emitting structures may include a first conductive semiconductor layer, an active layer having a multi-quantum well structure, in which a quantum well layer and a barrier layer are alternately stacked multiple times, and a second conductive semiconductor layer, which are sequentially stacked. An absorption conversion rate of the third light-emitting structure of the blue light may be 3% or less.