Patent classifications
H10H29/8325
LIGHT EMITTING ELEMENT, DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
A light emitting element includes: a semiconductor stack including a first semiconductor layer, an active layer, and a second semiconductor layer; a conductive layer on a first surface of the semiconductor stack; a protective layer on side surfaces of the conductive layer, a side surface of the semiconductor stack, and the first surface of the conductive layer, and spaced from a second surface facing the first surface of the semiconductor stack; a contact electrode on one surface of the semiconductor stack; a selective reflection layer on the side surfaces of the conductive layer, the side surface of the semiconductor stack, and the first surface of the conductive layer outside the protective layer, and including an opening overlapping the contact electrode, wherein the selective reflection layer includes M pairs of first and second layers (M is an integer greater than or equal to 2).
Micro-LED structure and micro-LED chip including same
A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further comprises an isolation structure formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light emitting layer. A top surface of the isolation structure is above the light emitting layer. A bottom surface of the isolation structure is aligned with a bottom of the light emitting layer.
DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING DISPLAY DEVICE
A display device includes a pixel circuit layer, a first light-emitting-element layer, a second light-emitting-element layer, and a third light-emitting-element layer. The pixel circuit layer includes a pixel circuit. The first light-emitting-element layer is disposed on the pixel circuit layer, and includes a first light emitting element and first conductive patterns spaced apart from the first light emitting element. The second light-emitting-element layer is disposed on the first light-emitting-element layer, and includes a second light emitting element spaced apart from the first light emitting element, and second conductive patterns connected to the first conductive patterns. The third light-emitting-element layer is disposed on the second light-emitting-element layer, and includes a third light emitting element spaced apart from the first light emitting element and the second light emitting element, and third conductive patterns connected to the second conductive patterns.
Micro-LED structure and micro-LED chip including same
A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light emitting layer.
DISPLAY DEVICE
In one or more examples, a display device includes a substrate, sub pixels including a first sub pixel, a power line disposed, a driving transistor disposed in the first sub pixel, a first reflection electrode and a second reflection electrode disposed on the driving transistor in the first sub pixel, a first light emitting diode disposed on one of the first and second reflection electrodes in the first sub pixel, a first connection electrode electrically connected to the power line, a second connection electrode electrically connected to the driving transistor, and a third connection electrode which is electrically connected to one of the first and second connection electrodes by the other one of the first and second reflection electrodes and is electrically connected to the first light emitting diode. Accordingly, a portion where the light emitting diode is not disposed may be repaired without a separate repair process.
DISPLAY APPARATUS
A display device is provided with, a substrate, a display area and a non-display area, a pixel driving circuit in the display area on the substrate, an insulating layer on the pixel driving circuit, a bank disposed in a plurality of sub-pixels including a first sub-pixel and a second sub-pixel on the insulating layer, a first electrode disposed on the bank and including a central area, an edge area, and a reflection area between the central area and the edge area, and a light emitting device electrically connected to the first electrode on the first electrode and overlapping the bank. A width of a reflection area of the first electrode in the first sub-pixel is different from a width of a reflection area of the first electrode in the second sub-pixel.
EMISSIVE OPTOELECTRONIC DEVICE WITH IMPROVED COLOR CONVERSION EFFICIENCY AND METHOD FOR MANUFACTURING SAME
The invention relates to a light-converting optoelectronic device comprising light-emitting diodes and conversion pads (40). Spacer portions (23) that are conductive and transparent, are located between the reflective portion (22) and the lower conductive portion (31) of the converting luminous pixels (Px.sub.ac) only or of the non-converting luminous pixels (Px.sub.sc) only. Moreover, the thickness (e.sub.31.opt) of the lower conductive portions (31) and the thickness (e.sub.23.opt) of the spacer portions (23) are predefined so as to maximize: in the non-converting luminous pixels (PX.sub.sc), an extraction efficiency of the emitted light from the light emitting diode; and in the converting luminous pixels (PX.sub.ac), a coupling efficiency of the light emitted by the active portion (32) with optical modes supported in the conversion portion (40).
DISPLAY DEVICE AND HEAD MOUNTED DISPLAY APPARATUS
A display device includes: an infrared light emitting diode in a first subpixel and in which a second anode electrode, an infrared emitting layer, and a second cathode electrode are stacked; a dielectric layer on the infrared light emitting diode; and a light emitting diode in the first subpixel and in which a first anode electrode, a light emitting layer, and a first cathode electrode are stacked on the dielectric layer, wherein a structure configured with the second cathode electrode, the dielectric layer, and the first anode electrode reflects visible light and transmits infrared ray.
DISPLAY APPARATUS
A display apparatus includes a substrate in which a plurality of pixels including a plurality of sub pixels is defined, a plurality of transistors on the substrate, an insulating layer on the substrate, an adhesive layer on the insulating layer, and a plurality of light emitting diodes on the adhesive layer in each of the plurality of sub pixels. The insulating layer includes a plurality of holes disposed in each of the plurality of pixels. The plurality of holes includes a plurality of first holes, a plurality of second holes, and a plurality of third holes. The plurality of first holes overlap the plurality of light emitting diodes. The plurality of second holes enclose the plurality of first holes on a plane, and the plurality of third holes includes a hole in the outermost periphery in a first direction.