A semiconductor device includes: a first substrate including first front side pads arranged around a front surface; a second substrate including second front side pads arranged around a front surface; a third substrate; first connection members each electrically connecting a corresponding first front side pad on the first substrate and a corresponding third back side pad on the third substrate; second connection members each electrically connecting a corresponding second front side pad on the second substrate and a corresponding third front side pad on the third substrate; a first resin layer that is in contact with a periphery of the front surface of the first substrate and a periphery of the back surface of the third substrate; and a second resin layer that is in contact with a periphery of the front surface of the second substrate and a periphery of the back surface of the third substrate.

A semiconductor module includes: a board that includes a wiring portion formed on at least one surface and a hole portion having an opening on the at least one surface side; and a body portion that is disposed on one surface side of the board and is sealed by a resin, and a lead portion having a plate shape that extends toward an outside from a side surface of the body portion. In at least one semiconductor package, a part of the body portion is inserted into the hole portion, and the lead portion extends along a surface of the board, and a lower surface of the lead portion is bonded to the wiring portion.

A semiconductor device, including: a semiconductor chip; an insulated circuit substrate that has: a metal plate including a ground region on an upper surface thereof, an insulating layer disposed on the upper surface of the metal plate with the ground region exposed therefrom, and a conductive circuit pattern plate on which the semiconductor chip is mounted; a ground wiring member conductively connected to the ground region of the metal plate, the ground wiring member being conductive and including an upper end portion located above the insulated circuit substrate; and a sealing member sealing the semiconductor chip, the insulated circuit substrate and the ground wiring member, the sealing member having a sealing upper surface and including an opening formed therein to expose therethrough the upper end portion of the ground wiring member above the insulated circuit substrate.

The present invention is directed to a power supply module for immersion cooling, by providing uneven edges between the edge of the metal layer of the upper surface and the lower surface of the third substrate and the edge of the third substrate, the design of the spacing between adjacent metal layers and the design of the height of the gap between the third substrate and the first substrate or the second substrate, the faults and failures caused by the conductive particles in the cooling fluid are reduced. On the other hand, by dispensing glue at the key position between the first substrate and the third substrate and between the second substrate and the third substrate, the possibility that the conductive particles fluid into the power supply module is further reduced. The present invention further discloses several structures and manufacturing processes of the third substrate for immersion cooling.

A semiconductor package may include a package substrate including a plurality of upper pads, a semiconductor chip on the package substrate and electrically connected to at least one of the plurality of upper pads, a sealing layer covering at least a portion of the semiconductor chip and the package substrate, and a capacitor structure including a first conductive layer covering one side surface of the package substrate and a portion of the sealing layer, a second conductive layer covering another side surface of the package substrate and another portion of the sealing layer, and a dielectric layer being between the first conductive layer and the second conductive layer.

An electronics assembly includes a motherboard, a processor, and a z-axis power delivery (ZPD) module. The processor is mounted on the motherboard. The ZPD module is electrically connected to a substrate of the processor through an opening that goes all the way through the motherboard. The processor may be a central processing unit (CPU), a graphics processing unit (GPU), or a system-on-a-chip (SOC), for example.

Provided is a semiconductor device including a buffer die configured to communicate with an external device, a memory die stack including a plurality of memory dies stacked on the buffer die and connected to the buffer die through a plurality of through silicon vias, and a capacitor arranged on an upper portion of an uppermost memory die among the plurality of memory dies, wherein the capacitor surrounds at least some surfaces of the plurality of memory dies, when viewed in a top down view.

A power module has an inductor assembly and a device assembly beneath it. The inductor assembly has a magnetic core with a winding at least partially embedded. The winding has a first end and a second end exposed on a bottom surface of the inductor assembly, and the first end provides an output voltage. The device assembly has a die substrate, a first power die having a first switch, and a second power die having a second switch. The switches are electrically connected in series between an input voltage and ground reference. The second power die is embedded in the die substrate, having metal contacts on both its top side and bottom side. A first plurality of metal contacts of the first power die and the metal contacts on the top side of the second power die are electrically connected together and both to the second end of the winding.