Provided are a semiconductor device and a power conversion device for improvement in the recovery characteristic by suppressing the hole injection through reduction in the area of the p body layer in the diode unit of the RC-IGBT. A semiconductor device according to the present invention is formed as an RC-IGBT having an IGBT unit and a diode unit formed in a single chip. A collector electrode layer/cathode electrode layer, a diffusion layer, a buffer layer, a drift layer, a body layer, an insulating layer, and an emitter/anode electrode layer are stacked in the order from a back surface side to a front surface side of the chip. The diode unit includes a plurality of trenches. The plurality of trenches 6 include a region in the presence of the body layer between the trenches, and a region in the absence of the body layer between the trenches.

A semiconductor device, including: a semiconductor substrate having an active region and a termination region; a first semiconductor region provided in the semiconductor substrate; a second semiconductor region provided in the active region, between a front surface of the semiconductor substrate and the first semiconductor region; a vertical device structure provided in the active region; an insulating layer that covers the front surface of the semiconductor substrate in the termination region; a voltage withstanding structure provided in the termination region to surround the active region, and including a third semiconductor region; a channel stopper electrode provided on the insulating layer, closer to the semiconductor substrate than is the voltage withstanding structure; and a fourth semiconductor region provided between the front surface of the semiconductor substrate and the first semiconductor region, apart from the third semiconductor region and the contact hole on two sides of the fourth semiconductor region.

A first bonding member is located between a first electrode of a second chip and a second electrode of a first chip in a first direction and between a first electrode of the second chip and a protective film of the first chip in the first direction. The first bonding member electrically connects the second electrode of the first chip and the first electrode of the second chip in an opening of the protective film of the first chip. The protective film of the first chip includes a first recess in a surface of the protective film of the first chip facing the first electrode of the second chip. A portion of the first bonding member is located in the first recess.

A semiconductor device includes a semiconductor substrate which includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type opposite to the first conductivity type formed on the first semiconductor region, and in which in plan view, an element region in which a semiconductor element is formed and a termination region located closer to an end part side of the semiconductor substrate than the element region are formed. The semiconductor device includes multiple ditch structures formed in parallel in plan view in the termination region, penetrating from a top side through the second semiconductor region and reaching the first semiconductor region, with a conductive layer in a floating state formed inside, and a third semiconductor region of the first conductivity type having higher impurity concentration than the first semiconductor region provided at a bottom of the ditch structure.

Provided is a semiconductor device including: a drift region of a first conductivity type which is provided in a semiconductor substrate; an emitter region of the first conductivity type which is provided at a front surface of the semiconductor substrate, and which has a doping concentration higher than that of the drift region; a plurality of trench portions which are provided above the drift region; a trench contact portion which is provided in a mesa portion between the plurality of trench portions; and a plug region of a second conductivity type which is provided in contact with a lower end of the trench contact portion. The trench contact portion may have a main trench contact which extends in a trench extension direction in a top view, and a sub-trench contact which extends from the main trench contact in a direction different from the trench extension direction in the top view.

Provided is a semiconductor device including an active portion and a temperature sensitive portion, the semiconductor including: a semiconductor substrate; and an interlayer dielectric film which is provided above the semiconductor substrate, in which the active portion includes an active trench portion, and an active contact portion, the temperature sensitive portion includes a temperature sensitive diode, and a temperature sensitive contact portion, and a contact width of the temperature sensitive contact portion is larger than a contact width of the active contact portion. Provided is a semiconductor device in which in a depth direction of a semiconductor substrate, an extension depth to which a temperature sensitive trench contact portion extends is shallower than an extension depth to which a plurality of active trench contact portions extend.

In a power semiconductor device, a deep semiconductor region is provided in addition to a barrier structure. The barrier structure is spatially separated from a trench structure in an active region and arranged in a transition region between the active region and an edge termination region of the power semiconductor device.

Provided is a semiconductor device including: an active portion which is provided in a semiconductor substrate; and a temperature sensitive portion which is provided above the semiconductor substrate, in which the temperature sensitive portion includes a temperature sensitive diode which is provided above the semiconductor substrate, a first interlayer dielectric film which is provided above the temperature sensitive diode, a temperature sensitive contact portion which is provided to extend from an upper surface to a lower surface of the first interlayer dielectric film, and a housing portion which is provided below the temperature sensitive contact portion, a bottom surface corner portion of the temperature sensitive contact portion is in contact with the temperature sensitive diode, and a bottom surface of the temperature sensitive contact portion is in contact with the housing portion.

A semiconductor device includes: a first main surface-side gate structure provided in a first main surface to control a first conductive channel in a base layer; and a second main surface-side gate structure provided in a second main surface to control a second conductive channel in a first collector layer, and a first dense region in which three or more consecutive second main surface-side gate structures are arranged and a first sparse region in which three or more consecutive second main surface-side gate structures are arranged at a density lower than that in the first dense region are defined.

A semiconductor device includes a transistor formed on a semiconductor substrate including an active region where the transistor is formed and a termination region surrounding the active region. The termination region includes a first interlayer insulating film on the semiconductor substrate, a second interlayer insulating film thereon, a wiring electrode electrically connected to a gate electrode of the transistor, a terminal electrode provided closer to the edge portion of the semiconductor substrate than the wiring electrode is, and a field plate electrode provided between the wiring electrode and the terminal electrode in plan view. The wiring electrode, the field plate electrode, and the terminal electrode are provided on the first interlayer insulating film. The field plate electrode is covered with the second interlayer insulating film. The field plate electrode has a smaller height than the wiring electrode and the terminal electrode.