A method for manufacturing a bonded substrate, the method includes: bonding a first mother substrate including a first substrate and a second mother substrate including a second substrate to form a bonded mother substrate; cutting off a part of the first mother substrate along a dividing line of the bonded mother substrate to form a cutoff portion; dividing the bonded mother substrate along the dividing line; separating a bonded substrate from the bonded mother substrate, the bonded substrate including the first substrate and the second substrate bonded to the first substrate; forming a contact terminal on an end portion of the first mother substrate, the contact terminal contactable with an external terminal; forming a communication path between the first mother substrate and the second mother substrate along the dividing line.

A substrate that includes a film-shaped member that has a first main surface and a second main surface; a first electrode that has a third main surface and a fourth main surface, the third main surface facing the second main surface of the film-shaped member, the first electrode having a first patterning region with a first part where the film-shaped member is exposed from the first electrode and a second part where the film-shaped member is not exposed from the first electrode; and an adhesive tape facing the fourth main surface of the first electrode and the second main surface of the film-shaped member such that the adhesive tape is disposed across the first part and the second part in the first patterning region.

A method of manufacture and resulting structure for a single crystal electronic device with an enhanced strain interface region. The method of manufacture can include forming a nucleation layer overlying a substrate and forming a first and second single crystal layer overlying the nucleation layer. This first and second layers can be doped by introducing one or more impurity species to form a strained single crystal layers. The first and second strained layers can be aligned along the same crystallographic direction to form a strained single crystal bi-layer having an enhanced strain interface region. Using this enhanced single crystal bi-layer to form active or passive devices results in improved physical characteristics, such as enhanced photon velocity or improved density charges.

A fluid actuator includes an actuating portion, a piezoelectric unit, a conduction unit, and a levelness regulating portion. The actuating portion includes a first actuating area, a second actuating area, and at least one connecting section between the two actuating areas. The piezoelectric unit includes a first signal area and a second signal area. The two signal areas are provided in the same plane and are isolated from each other by an isolating portion. The piezoelectric unit corresponds in position to the first actuating area of the actuating portion. The conduction unit includes a first electrode and a second electrode. The first signal area of the piezoelectric unit is electrically connected to the first electrode, and the second signal area of the piezoelectric unit to the second electrode. The levelness regulating portion, the piezoelectric unit, and the conduction unit are located on the same side of the actuating portion.

A display device includes a touch panel; a display panel under the touch panel and displaying an image; a piezoelectric element under the touch panel and including an upper electrode, a lower electrode and a piezoelectric layer; and a rectifying circuit connected to the piezoelectric element.

A piezoelectric film includes a plurality of laminated main baking unit PZT layers. A first seed layer is present at a lower surface side of a lowermost main baking unit PZT layer. A second seed layer is interposed between two adjacent main baking unit PZT layers at an intermediate position between the lowermost main baking unit PZT layer and an uppermost main baking unit PZT layer.

A CMOS-compatible actuator platform for implementing phase, amplitude, and frequency modulation in silicon nitride photonic integrated circuits via piezo-optomechanical coupling using tightly mechanically coupled aluminum nitride actuators is disclosed. The platform, which may be fabricated in a CMOS foundry, enables scalable active photonic integrated circuits for visible wavelengths, and the piezoelectric actuation functions without performance degradation down to cryogenic operating temperatures. A number of devices are possible, including ring modulator devices, phase shifter devices, Mach-Zehnder interferometer devices, directional coupler devices (including tunable directional coupler devices), and acousto-optic modulator and frequency shifter devices, each of which can employ the same AlN actuator platform. As all of these devices can be built on the same AlN actuator platform, numerous optical functions can be implemented on a single die.

A piezoelectric element and a method of manufacturing the piezoelectric element are provided. The piezoelectric element is provided with a substrate having an intermediate layer disposed between a first substrate layer and a second substrate layer, a first electrode layer of an electrically conductive non-ferroelectric material disposed on the second substrate layer, a ferroelectric, piezoelectric and/or flexoelectric layer disposed on the first electrode layer, and a second electrode layer of an electrically conductive non-ferroelectric material disposed on the ferroelectric, piezoelectric and/or flexoelectric layer. The intermediate layer and/or the first substrate layer is removed below a layer stack formed by the first electrode layer, the ferroelectric, piezoelectric and/or flexoelectric layer, and the second electrode layer so that the layer stack can be moved in a translatory manner along its normal directed along the layer sequence.

The interface region may include a region in which first intensity is higher than second intensity and in which the first intensity is higher than third intensity, where a degree of orientation of the (−211) crystal face of the second layer is denoted as the first intensity, the degree of orientation of the (−111) crystal face of the second layer is denoted as the second intensity, and the degree of orientation of the (002) crystal face of the second layer is denoted as the third intensity. The surface-layer region may include a region in which the first intensity is higher than the third intensity and in which the second intensity is higher than the third intensity.

There is provided a laminated substrate having a piezoelectric film, including: a substrate; and a piezoelectric film provided on the substrate interposing a base film, wherein the piezoelectric film has an alkali niobium oxide based perovskite structure represented by a composition formula of (K.sub.1-xNa.sub.x)NbO.sub.3 (0<x<1) and preferentially oriented in (001) plane direction, and a sound speed of the piezoelectric film is 5100 m/s or more.