There is provided a laminated substrate having a piezoelectric film, including: a substrate; and a piezoelectric film provided on the substrate interposing a base film, wherein the piezoelectric film has an alkali niobium oxide based perovskite structure represented by a composition formula of (K.sub.1-xNa.sub.x)NbO.sub.3 (0<x<1) and preferentially oriented in (001) plane direction, and a sound speed of the piezoelectric film is 5100 m/s or more.

A sensor is disclosed which includes a piezoelectric layer, a piezoresistive layer, one or more electrode layers coupled to the piezoelectric layer and to the piezoresistive layer, the piezoelectric layer configured to provide an electrical signal in response to application of a dynamic disturbance, and the piezoresistive layer configured to provide a change in resistivity in response to application of a static disturbance.

A sensor system may have a force sensor formed from a piezoelectric film. The piezoelectric film may comprise a number of tuned microstructures that are configured to resonate at a particular frequency. In accordance with the tuning of the microstructures, frequency signals corresponding to the microstructure resonance may be mechanically amplified before being processed by associated processing electronics. The processing electronics may be configured to identify a type of biological vibration detected by the force sensor.

A piezoelectric element including a piezoelectric layer having a perovskite structure including lead, zirconium, and titanium, and an electrode provided on the piezoelectric layer is provided. In the piezoelectric layer, in a range of 50 nm or smaller from an interface between the piezoelectric layer and the electrode in a thickness direction, a ratio c/a of a lattice spacing a in a direction perpendicular to the thickness direction and a lattice spacing c in the thickness direction satisfies 0.986≤c/a≤1.014.

A touch-sensitive assembly and method of making includes a first electrically conductive layer disposed on a first substrate and a second electrically conductive layer disposed on a second substrate. A piezoelectric film is disposed between the first electrically conductive layer and the second electrically conductive layer. The piezoelectric film includes a plurality of aligned piezoelectric particles disposed in a polymeric matrix and is characterized by a haze value of about 5% or less.

A semiconductor device comprising a passive magnetoelectric transducer structure adapted for generating a charge via mechanical stress caused by a magnetic field. The first transducer structure has a first terminal electrically connectable to the control terminal of an electrical switch, and having a second terminal electrically connectable to the first terminal of the electrical switch for providing a control signal for opening/closing the switch. The switch may be a FET. A passive magnetic switch using a magnetoelectric transducer structure. Use of a passive magnetoelectric transducer structure for opening or closing a switch without the need for an external power supply.

A piezoelectric device including a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact terminal and a second contact terminal is provided. The metal-insulator-metal element is disposed on the substrate. The hydrogen blocking layer is disposed on the metal-insulator-metal element. The passivation layer covers the hydrogen blocking layer and the metal-insulator-metal element. The first contact terminal is electrically connected to the metal-insulator-metal element. The second contact terminal is electrically connected to the metal-insulator-metal element.

A microphone device may include: a substrate wafer, a support member bonded to a front surface of the substrate wafer, a single-crystal piezoelectric film provided over the support member, a top electrode and a bottom electrode. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The top electrode may be arranged adjacent to the first surface of the single-crystal piezoelectric film. The bottom electrode may be arranged adjacent to the second surface of the single-crystal piezoelectric film. The substrate wafer may have a through-hole formed therein. The through-hole of the substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.

An ultrasonic fingerprint recognition sensor and a manufacturing method thereof, and a display device are disclosed. The ultrasonic fingerprint recognition sensor includes a resonant cavity, a receiver electrode, a drive electrode, and a piezoelectric thin film layer between the receiver electrode and the drive electrode, the resonant cavity is on a side, closer to the piezoelectric thin film layer, of the receiver electrode, and is configured to increase vibration amplitude of the piezoelectric thin film layer.

A piezoelectric actuator comprises a substrate, an insulator layer on the substrate, and a piezo actuator stack on the insulator layer. The piezo actuator stack comprises an insulator-adjacent electrode on the insulator layer. A piezo layer having a tapered sidewall resides on a portion of the insulator-adjacent electrode. An insulator-distal electrode on the piezo layer having a taper-adjacent edge offset from an intersection of the tapered sidewall of the piezo layer and the insulator-adjacent electrode.