Provided is a piezoelectric thin film device in which lattice mismatch between a piezoelectric thin film and a lower electrode layer (first electrode layer) is reduced. A piezoelectric thin film device 10 comprises a first electrode layer 6a and a piezoelectric thin film 2 laminated directly on the first electrode layer 6a; the first electrode layer 6a includes an alloy composed of two or more metal elements; the first electrode layer 6a has a body-centered cubic lattice structure; and the piezoelectric thin film 2 has a wurtzite structure.

In a composite component, a semiconductor device is stacked on an elastic wave device. Side electrodes extend from at least one side surface of a piezoelectric substrate of the elastic wave device to at least a side surface of a semiconductor substrate of the semiconductor device and are connected to an IDT electrode and functional electrodes. The side electrodes extend onto at least one of a second main surface of the piezoelectric substrate and a second main surface of the semiconductor substrate.

The present application provides a human joint energy harvesting apparatus for capturing the biomechanical energy of a joint to generate electrical energy. The generated electrical energy may provide a real-time power supply to the wearable electronics. The apparatus employs a linear slide rail mechanism and cooperates with the user's first limb and second limb to form a slider-crank mechanism, which converts the rotating motion of the joint into a linear motion of the linear slide rail mechanism. The bending beam converts the linear motion of the linear slide rail mechanism into a bending motion. A piezoelectric film may be bonded to the upper and lower surfaces of the bending beam. During walking, the bending beam is deformed, causing the piezoelectric film to be stretched or compressed to generate electrical energy. To harvest more energy, the bending beam used in the apparatus is designed to be subjected to forced motion and free vibration, and a proof mass is attached to it. The present application also provides a wearable electronic device equipped with the human joint energy harvesting apparatus.

A piezoelectric sensor and a manufacturing method therefor, and a detection apparatus, which relate to the technical field of sensing. The piezoelectric sensor includes: an array substrate: a first capping layer located on the array substrate and including a first portion and a second portion, wherein the first portion covers the array substrate, a cavity is provided between the second portion and the array substrate, and the second portion is provided with a first opening: a first electrode located above the first capping layer and above the cavity, a piezoelectric thin film located on the first electrode, and a second electrode located on the piezoelectric thin film.

A piezoelectric thin film includes a first piezoelectric layer and a second piezoelectric layer directly stacked on the first piezoelectric layer. The first piezoelectric layer contains a tetragonal crystal 1 of a perovskite-type oxide. The second piezoelectric layer contains a tetragonal crystal 2 of a perovskite-type oxide. A (001) plane of the tetragonal crystal 1 is oriented in a normal direction do of a surface of the piezoelectric thin film. A (001) plane of the tetragonal crystal 2 is oriented in the normal direction dn of the surface of the piezoelectric thin film. An interval of the (001) plane of the tetragonal crystal 1 is c1, an interval of a (100) plane of the tetragonal crystal 1 is a1, an interval of the (001) plane of the tetragonal crystal 2 is c2, an interval of a (100) plane of the tetragonal crystal 2 is a2, c2/a2 is more than c1/a1 and c1/a1 is from 1.015 to 1.050.

In an ultrasonic sensor that is attached to a body component, a negative electrode line connected to a negative terminal is isolated from a shielding portion. The shielding portion is connected to a ground potential point without being connected to the negative electrode line.

A method of forming a microphone device includes: forming a through-hole in a substrate wafer; providing a second wafer; bonding the second wafer to the substrate wafer; and forming a top electrode over a first surface of a single-crystal piezoelectric film of the second wafer. The second wafer may include the single-crystal piezoelectric film. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The second wafer may further include a bottom electrode arranged adjacent to the second surface, and a support member over the single-crystal piezoelectric film. The through-hole in substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.

A piezoelectric element that includes a substrate, a lower electrode layer on the substrate, an intermediate layer on the lower electrode layer, and an upper electrode layer on the intermediate layer. The intermediate layer includes a first piezoelectric layer including an aluminum nitride as a main component thereof and located between the lower electrode layer and the upper electrode layer, a first buffer layer including an aluminum nitride as a main component and located between the first piezoelectric layer and the upper electrode layer, a first intermediate electrode layer located between the first buffer layer and the upper electrode layer, and a second piezoelectric layer located between the first intermediate electrode layer and the upper electrode layer.

Highly deformable heterostructures utilizing liquid metals and nanostructures that are suitable for various applications, including but not limited to stretchable electronic devices that can be worn, for example, by a human being. Such a deformable heterostructure includes a stretchable substrate, a conductive liquid metal on the substrate, and nanostructures forming a solid-liquid heterojunction with the conductive liquid metal.

A piezoelectric device includes a piezoelectric body at least a portion of which can bend and vibrate, an upper electrode on an upper surface of the piezoelectric body and in which distortion of a crystal lattice is reduced as a distance from the upper surface of the piezoelectric body increases, a lower electrode on a lower surface of the piezoelectric body and in which distortion of a crystal lattice is reduced as a distance from the upper surface of the piezoelectric body increases, and a support substrate below the piezoelectric body, in which a recess extending from a lower surface of the support substrate toward the lower surface of the piezoelectric device is provided.