A polymer thin film includes polyvinylidene fluoride (PVDF) and is characterized by a Young's modulus along an in-plane dimension of at least 4 GPa, an electromechanical coupling factor (k.sub.31) of at least 0.1 at room temperature. A method of manufacturing such a polymer thin film may include forming a polymer composition into a polymer thin film, applying a tensile stress to the polymer thin film along at least one in-plane direction and in an amount effective to induce a stretch ratio of at least approximately 5 in the polymer thin film, and applying an electric field across a thickness dimension of the polymer thin film. Annealing and poling steps may separately or simultaneously accompany and/or follow the act of stretching of the polymer thin film.

A transduction unit of a non-contact human sleep physiological parameter detection sensor includes a circuit board, a piezoelectric film and conductive adhesives, wherein the piezoelectric film includes a film sheet and two electrodes, which are respectively arranged on two side faces of the film sheet; the piezoelectric film is attached to the circuit board; and the two electrodes of the piezoelectric film are respectively electrically connected to two exposed pad electrodes on the circuit board by means of the conductive adhesives.

A vibration module is disclosed. The vibration module includes a film, a piezoelectricity device, and a substrate. The film has a first surface. The piezoelectricity device is disposed on the first surface. The substrate is disposed on the first surface by in-mold injection method, which contacts and surrounds the piezoelectricity device.

The invention provides a film having a high relative permittivity, a high volume resistivity, and a high breakdown strength. The film has a relative permittivity of 9 or higher at a frequency of 1 kHz and 30° C., a volume resistivity of 5E+15 Ω.Math.cm or higher at 30° C., and a breakdown strength of 500 V/μm or higher.

A piezoelectric device including a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact terminal and a second contact terminal is provided. The metal-insulator-metal element is disposed on the substrate. The hydrogen blocking layer is disposed on the metal-insulator-metal element. The passivation layer covers the hydrogen blocking layer and the metal-insulator-metal element. The first contact terminal is electrically connected to the metal-insulator-metal element. The second contact terminal is electrically connected to the metal-insulator-metal element.

A layered portion includes, at least above an opening, a first single-crystal piezoelectric body layer, a second single-crystal piezoelectric body layer, an intermediate electrode layer, a lower electrode layer, and an upper electrode layer. The first single-crystal piezoelectric body layer includes a material that produces a difference in etching rate between a positive side and a negative side of a polarization charge. The polarization charge of the first single-crystal piezoelectric body layer is positive on a side of the intermediate electrode layer and negative on a side of the lower electrode layer

Provided is an aluminum nitride film in which, aluminum nitride crystal grains containing a metal element differing from aluminum and substituting for aluminum are main crystal grains of a polycrystalline film formed of crystal grains, and a concentration of the metal element in a grain boundary between the aluminum nitride crystal grains in at least one region of first and second regions corresponding to both end portions of the polycrystalline film in a film thickness direction of the polycrystalline film is higher than a concentration of the metal element in a center region of the aluminum nitride crystal grain in the at least one region, and is higher than a concentration of the metal element in a grain boundary between the aluminum nitride crystal grains in a third region located between the first region and the second region in the film thickness direction of the polycrystalline film.

A metal stack for templating the growth of AlN and ScAlN films is disclosed. The metal stack comprises one, two, or three layers of metal, each of which is compatible with CMOS post-processing. The metal stack provides a template that promotes the growth of highly textured c-axis {002} AlN and ScAlN films. The metal stacks include one or more metal layers with each metal layer having either a hexagonal {002} orientation or a cubic {111} orientation. If the metal stack includes two or more metal layers, the layers can alternate between hexagonal {002} and cubic {111} orientations. The use of ScAlN results in a higher piezoelectric constant compared to that of AlN for ScAlN alloys up to approximately 44% Sc. The disclosed metal stacks resulted in ScAlN films having XRD FWHM values of less than approximately 1.1° while significantly reducing the formation of secondary grains in the ScAlN films.

The piezoelectric laminate and the piezoelectric element have, on a substrate in the following order, a lower electrode layer and a piezoelectric film containing a perovskite-type oxide, in which the lower electrode layer contains a Ta element, contains a Ta nitride on a side closest to the piezoelectric film in a thickness direction of the lower electrode layer, and includes a region where a content of the Ta element changes in the thickness direction, and the change in the content of the Ta element in the thickness direction is continuous.

The piezoelectric laminate and the piezoelectric element have, on a substrate in the following order, a lower electrode layer and a piezoelectric film containing a perovskite-type oxide, in which the lower electrode layer includes the metal layer containing Ni and a surface layer containing a Ni oxide or a Ni oxynitride, and in the lower electrode layer, the surface layer is arranged on the side closest to the piezoelectric film.