A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

An apparatus may include one or more segmented piezoelectric micromechanical ultrasonic transducer (PMUT) elements. Each segmented PMUT element may include a substrate, an anchor structure disposed on the substrate and a membrane disposed proximate the anchor structure. The membrane may include a piezoelectric layer stack and a mechanical layer. The anchor structure may include boundary portions that divide the segmented PMUT element into segments. Each segment may have a corresponding segment cavity. The boundary portions may correspond to nodal lines of the entire membrane. The membrane may include a membrane segment disposed proximate each segment cavity. The membrane may be configured to undergo one or both of flexural motion and vibration when the segmented PMUT element receives or transmits signals.

Embodiments of the present disclosure provide a flexible acoustic-electric substrate and a preparation method thereof, and a flexible acoustic-electric device. The preparation method of a flexible acoustic-electric substrate includes: forming a flexible substrate; forming a plurality of piezoelectric components on the flexible substrate; and forming a plurality of chambers on the flexible substrate in a one-to-one correspondence relationship with the plurality of piezoelectric components, and the plurality of chambers are located on a side of the flexible substrate away from the plurality of piezoelectric components.

The disclosure is directed to piezoelectric film structures and sensors, and display assemblies using same. The piezo electric film structure is transparent and includes: a substrate; a bottom optical layer disposed on or above the substrate; a bottom conducting layer disposed on or above the bottom optical layer; at least one piezoelectric layer disposed on or above the bottom conducting layer; a top conducting layer disposed on or above the at least one piezoelectric layer; and a top optical layer disposed on or above the top conducting layer. The sensor includes the piezoelectric film structure electrically connected to a signal processing system. The display assembly includes the sensor operably arranged relative to a display device. The piezoelectric film structures and sensors can be configured to determine one or more touch-sensing features associated with a touch event.

Described herein is a method of bonding a piezoelectric substrate to a support substrate to form a composite substrate. The piezoelectric substrate has one surface which is positively polarized, and a second surface which is negatively polarized. The method described herein includes the steps of bonding the positively polarized surface of the piezoelectric substrate to one surface of the support substrate by a direct bonding method.

The present invention provides an ultrasonic fingerprint recognition module and a display panel. Advantages of the present invention are that a vibration absorbing layer can absorb mechanical energy of a piezoelectric thin film layer such that a number of cycles of later ultrasound is significantly reduces to extremely increase a vertical resolution of ultrasound fingerprint recognition and overall recognition effect and precision.

A ferroelectric device comprising a substrate; a textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.

A light, flexible, and tough thin film having high total light transmittance that can be formed on various three dimensional shapes, and also provides a stably driven tactile sensor, which is an electronic device having the switching function thereof, is provided. The tactile sensor is formed on a polyimide thin film having high total light transmittance, thermal resistance, and a polar component of surface free energy with a specific value, and has a switching device that emits a voltage signal which, through an electronic circuit for controlling noise, stably drives another device. This tactile sensor has a curved or flat surface and has a first electrode, a ferroelectric layer, and a second electrode formed over the polyimide thin film. The switching device as a tactile sensor can drive another device merely by a light touch with a finger, and can be manufactured at a high non-defective rate.

A piezoelectric device that exhibits good piezoelectric characteristics, while reducing generation of leakage current paths, and a method of manufacturing the same, are provided. The piezoelectric device has a multilayer stack in which a first electrode, a piezoelectric layer, and a second electrode are stacked in this order on a substrate, wherein at least the first electrode is formed of an amorphous oxide conductor.

There is provided a piezoelectric device including a pressure chamber, a piezoelectric element, and a diaphragm disposed between the pressure chamber and the piezoelectric element. The diaphragm has a vibration region that overlaps the pressure chamber in plan view. The piezoelectric element overlaps the vibration region in plan view. The diaphragm has a crystal plane {110} of a single crystal silicon base, or a crystal plane of a single crystal silicon base of which a Young's modulus and a Poisson's ratio vary according to a crystal orientation.