A substrate processing apparatus includes a first cleaning solution supply part for supplying a main surface of a substrate with an alkaline or acid first cleaning solution and a second cleaning solution supply part for supplying the main surface with a second cleaning solution containing a thickener and having a viscosity higher than that of the first cleaning solution. In a state where one cleaning solution out of the first cleaning solution and the second cleaning solution is present on the main surface, the other cleaning solution is supplied onto the main surface. It is thereby possible to more reliably remove unnecessary substances on the main surface of the substrate.

A method for cleaning a substrate includes arranging the substrate in a processing chamber; controlling a pressure of the processing chamber to a predetermined pressure range; controlling a temperature of the processing chamber to a predetermined temperature range; and supplying a vapor mixture including a metal chelating vapor for a first period to remove metal contamination from surfaces of the substrate.

A substrate treating method, liquid and apparatus are provided which can reduce the amount of sublimable substance used for the drying of a substrate while reducing the collapse of pattern. The substrate treating method includes a step of supplying a liquid to the pattern-formed surface of the substrate, a step of solidifying the liquid on the pattern-formed surface to form a solidified body and a step of subliming the solidified body so as to remove it from the pattern-formed surface. The substrate treating liquid includes a molten sublimable substance and a solvent, the freezing point of the sublimable substance being higher than the freezing point of the solvent. When the sublimable substance and the solvent are separated, the sublimable substance is settled and in the solidification step, the settled sublimable substance is solidified to have a height equal to or higher than the height of a pattern.

A method for producing a quaternary alkylammonium hypochlorite solution includes a preparation step of preparing a quaternary alkylammonium hydroxide solution, and a reaction step of bringing the quaternary alkylammonium hydroxide solution into contact with chlorine, wherein a carbon dioxide concentration in a gas phase portion in the reaction step is 100 ppm by volume or less, and pH of a liquid phase portion in the reaction step is 10.5 or more.

Provided is a method of producing a quaternary alkyl ammonium hypochlorite solution with an excellent storage stability. Specifically, provided is a method of producing a quaternary alkyl ammonium hypochlorite solution, the method including: a preparation step in which a quaternary alkyl ammonium hydroxide solution is prepared and the concentration of amines in the quaternary alkyl ammonium hydroxide solution is set to 20 ppm by mass or less; and a reaction step in which the quaternary alkyl ammonium hydroxide solution is brought into contact with chlorine gas, wherein the concentration of carbon dioxide of a gas phase in the reaction step is 100 ppm by volume or less and the pH of a liquid phase in the reaction step is 10.5 or more.

A treatment liquid is a treatment liquid including water; a cationic compound; an anionic compound selected from the group consisting of a resin having a carboxy group or a salt thereof, a resin having a sulfo group or a salt thereof, a resin having a phosphorous acid group or a salt thereof, and a resin having a phosphoric acid group or a salt thereof; and an oxidizing agent, in which the treatment liquid has a pH of 7.0 or less, and the treatment liquid is substantially free of abrasive grains.

According to one embodiment, there is provided a cleaning agent. The cleaning agent includes an azole-based compound having a group including at least one selected from the group consisting of a glycidyl group, a hydrolyzable silyl group, and an amino group.

An aqueous composition includes (A) from 0.001 to 20 mass % of one or more kinds of fluorine-containing compounds selected from tetrafluoroboric acid, hexafluorosilicic acid, hexafluoroaluminic acid, hexafluorotitanic acid and a salt thereof, with respect to the total amount of the aqueous composition; and (B) from 0.0001 to 10 mass % of one or more kinds of compounds selected from a C.sub.4-13 alkylphosphonic acid, a C.sub.4-13 alkylphosphonate ester, a C.sub.4-13 alkyl phosphate and a salt thereof, with respect to the total amount of the aqueous composition.

There is provided a cleaning method and a cleaning apparatus capable of removing dirt on electrical contacts, the dirt being unable to be removed with deionized water, without adversely affecting a plating solution and a substrate holder which is a member for holding a substrate. A cleaning method according to the present disclosure is a cleaning method for a substrate holder having electrical contacts for supplying electric power to a substrate by contacting the substrate to plate the substrate, the method including a cleaning step of cleaning the electrical contacts attached to the substrate holder with a citric acid aqueous solution.

The present invention relates to a composition for treating a semiconductor substrate, and particularly to a composition for treating an edge portion of a wafer coated with polysilazane.

According to the composition for treating a semiconductor substrate according to the present invention, it is possible to uniformly maintain the quality of the composition in terms of management and to uniformly treat the boundary of the wafer in terms of processing. In addition, by improving the straightness of the boundary portion where polysilazane is removed, it is possible to significantly reduce the defect rate of the product and to stably improve the productivity yield.