Provided are compositions and methods useful in the post-CMP cleaning of microelectronic devices, in particular, devices which contain one or more surfaces comprising hydrophobic carbon or SiC. In general, the compositions comprise a chelating agent; a water-miscible solvent; a reducing agent; and a pH adjustor, wherein the composition has a pH of about 2 to about 13.

A composition comprises at least 99.5% by weight of an iodofluorocarbon compound A and at most 0.5% by weight of a compound B selected from water, HF, HI, IF5, I2, O2, CO2, CO and nitrogen. The iodofluorocarbon compound A is of formula (I) (R1)(R2)C(I)(R3) or of formula (II) (R1)(R2)C═C(I)(R3); in which R1, R2 and R3 independently of one another are selected from the group consisting of H, F, I, a C1-C10 alkyl radical, a C3-C10 cycloalkyl radical, a C2-C10 alkenyl radical, a C3-C10 cycloalkenyl radical, and a C6-C10 aryl radical. All radicals are optionally substituted by a fluorine or iodine atom. At least one of the substituents R1, R2 or R3, is F or is a radical as defined above comprising at least one fluorine atom. The iodofluorocarbon compound A is not CF3I.

A processing solution composition for reducing micro-bridge defects in a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source and a method of forming a pattern using the same are proposed. The processing solution composition includes 0.0001 to 1 wt % of an alkaline material, 0.0001 to 1 wt % of a nonionic surfactant having an HLB (Hydrophilic-Lipophilic Balance) value of 9 to 16, and 98 to 99.9998 wt % of water, reduces the number of micro-bridge defects in a polyhydroxystyrene-containing photoresist pattern defined by an extreme-ultraviolet exposure source, and has a low LWR (Line Width Roughness) value, thus effectively improving the uniformity of the pattern.

The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one anionic polymer.

Cleaning compositions and the method of using the same are disclosed, where the compositions include one or more alkanolamines, one or more ether alcohol solvents or aromatic containing alcohol, one or more corrosion inhibitors, and optionally one or more secondary solvents.

An object of the invention is to provide a method of cleaning semiconductor substrates that is excellent in abrasive particle removing performance with respect to semiconductor substrates having undergone CMP, as well as a cleaning liquid for semiconductor substrates having undergone CMP. The invention provides a method of cleaning semiconductor substrates, the method comprising a cleaning step of cleaning, by use of a cleaning liquid, a semiconductor substrate having undergone CMP using a polishing liquid containing abrasive particles. The semiconductor substrate contains metal, and the cleaning liquid has a pH of more than 7 at 25° C. The cleaning liquid comprises: a chelating agent; a specific component A; and an anticorrosive. The method satisfies Condition 1 that a product of a contact angle ratio obtained by a specific test method 1 and a specific degree of agglomeration obtained by a specific test method 2 is not more than 15.

A method for inhibiting a flash point of trans-1,2-dichloroethylene (T-1,2-DCE) and a use of T-1,2-DCE are provided. The T-1,2-DCE has an excellent cleaning effect and is environmental friendly but cannot be used alone because of huge safety hazard caused by its low flash point. 1-chloro-3,3,3-trifluoropropene (HCFO-1233zd) is used to inhibit the flash point of T-1,2-DCE. However, because the actual boiling points of these two substances are quite different, the two substances are easily separated at a slightly-high ambient temperature. Because a boiling point of HCFO-1233zd is extremely low, HCFO-1233zd will escape rapidly, resulting in the loss of inhibition on the flash point. In the present disclosure, T-1,2-DCE and 1-chloro-2,3,3-trifluoropropene are mixed to prepare a mixed solution, and the mixed solution can effectively maintain the inhibition on the flash point of T-1,2-DCE in various ambient temperatures, such that the T-1,2-DCE can be heated to generate a steam for cleaning.

A substrate cleaning composition, a method of cleaning a substrate using the same, and a method of fabricating a semiconductor device using the same, the substrate cleaning composition including a styrene copolymer including a first repeating unit represented by Formula 1-la and a second repeating unit represented by Formula 1-1b; an additive represented by Formula 2-1; and an alcoholic solvent having a solubility of 500 g/L or less in deionized water,

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Provided are compositions useful for the cleaning of microelectronic device structures. The residues may include post-CMP, post-etch, post-ash residues, pad and brush debris, metal and metal oxide particles and precipitated metal organic complexes such as copper-benzotriazole complexes. Advantageously, the compositions as described herein show improved aluminum, cobalt, and copper compatibility.

To provide a means capable of sufficiently removing organic residues present on the surface of a polishing object after polishing containing silicon oxide or polysilicon. A surface treatment composition contains a polymer having a constituent unit represented by Formula (1) below and water and is used for treating the surface of a polishing object after polishing, ##STR00001## in which, in Formula (1) above, R.sup.1 is a hydrocarbon group having 1 to 5 carbon atoms and R.sup.2 is a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms.