A light emitting device includes a transistor, a light reflection layer, a first insulation layer that includes a first layer thickness part, a second layer thickness part, and a third layer thickness part, a pixel electrode that is provided on the first insulation layer, a second insulation layer that covers a peripheral section of the pixel electrode, a light emission functional layer, a facing electrode, and a conductive layer that is provided on the first layer thickness part. The pixel electrode includes a first pixel electrode which is provided in the first layer thickness part, a second pixel electrode which is provided in the second layer thickness part, and a third pixel electrode which is provided in the third layer thickness part. The first pixel electrode, the second pixel electrode, and the third pixel electrode are connected to the transistor through the conductive layer.

An object includes an electro-optic display device provided with an optically active element, the optical properties thereof can be modified by applying an electric voltage or current between at least one electrode and one corresponding auxiliary electrode, between which the optically active element is disposed. The object further includes a middle part which delimits an opening closed by a crystal including a bottom surface beneath which the electro-optic display device is arranged. The crystal is provided with an opaque frame which is made remotely from the edges of the opening and which covers the contour of the electro-optic display device so as to conceal electrical connection elements. The electro-optic display device defines an active display area which is confined by the opaque frame, such that, when the electro-optic display device is activated and displaying information, a transparent area remains between the opaque frame and the edges of the opening.