A semiconductor device comprising a passive magnetoelectric transducer structure adapted for generating a charge via mechanical stress caused by a magnetic field. The first transducer structure has a first terminal electrically connectable to the control terminal of an electrical switch, and having a second terminal electrically connectable to the first terminal of the electrical switch for providing a control signal for opening/closing the switch. The switch may be a FET. A passive magnetic switch using a magnetoelectric transducer structure. Use of a passive magnetoelectric transducer structure for opening or closing a switch without the need for an external power supply.

A compact magnetic-based battery device that offers energy, a large number of cycles, a long storage time, and a short charging time is provided. The rechargeable battery device can include a first magnetic layer, a second magnetic layer, a dielectric layer disposed between the first magnetic layer and the second magnetic layer, and a plurality of high anisotropic magnetic nanoparticles embedded into the dielectric layer.

The present invention provides a magnetostrictive member with high performance, high reliability and high versatility. The magnetostrictive member is used in the vibration power generation as a power source for extracting electric energy from various vibrations. The member made of the single crystal is manufactured cheaper than the conventional manufacturing method. The magnetostrictive member is formed by cutting a single crystal of FeGa alloy by using electric discharge machining in a state that <100> orientation of the crystal of the FeGa alloy is aligned in a direction in which magnetostriction of the magnetostrictive member is required.

A composite material fabricated using a novel process and materials. The piezoelectric and magnetostrictive layers of the composite material are coated, layered, and bonded using a process known as LTTLP bonding. The resulting magnetoelectric composite fibers are bonded to a polyimide film based copper flexible circuit using a room temperature curing epoxy. The sensor that results is an MEMFC that outperforms conventionally fabricated MEMFCs.

The present invention provides an electromagnetic conversion device, comprising: an intermediate layer and electrode layers located on both sides of the intermediate layer, wherein the intermediate layer is a magnetoelectric layer. The electromagnetic conversion device realizes the direct conversion of charge and magnetic flux, and thus can be used as a fourth fundamental circuit element, so as to provide a new degree of freedom for the design of electronic circuits and information function devices. In addition, the electromagnetic conversion device can be used as memory elements to form a nonvolatile magnetoelectric information memory.