In a step, acceptor ions are implanted from a back surface of a semiconductor substrate. In a step, a wet process of immersing the semiconductor substrate in a chemical solution including hydrofluoric acid is performed, to introduce hydrogen atoms into the semiconductor substrate. In a step, proton radiation is provided to the back surface of the semiconductor substrate, to introduce hydrogen atoms into the semiconductor substrate and form radiation-induced defects. In a step, an annealing process is performed on the semiconductor substrate, to form hydrogen-related donors by reaction of the hydrogen atoms and the radiation-induced defects and reduce the radiation-induced defects.

There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.6 g/cm.sup.3 and equal to or lower than 7.5 g/cm.sup.3, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide sintered body is higher than 0.5 atomic % and equal to or lower than 5.0 atomic %, a content rate of zinc to the total of indium, tungsten and zinc in the oxide sintered body is equal to or higher than 1.2 atomic % and equal to or lower than 19 atomic %, and an atomic ratio of zinc to tungsten is higher than 1.0 and lower than 60. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device.

An array substrate and manufacturing method thereof, display panel and display device. The manufacturing method of the array substrate includes: forming, on a substrate, a first conductive pattern, a second conductive pattern and an insulating pattern, the insulating pattern at least covering an upper surface of the first conducting pattern, the first conductive pattern including a first amorphous transparent conductive pattern and a first metal pattern, and the second conductive pattern including a second amorphous transparent conductive pattern; and performing an annealing treatment to convert the first amorphous transparent conductive pattern and the second amorphous transparent conductive pattern to a first crystalline transparent conductive pattern and a second crystalline transparent conductive pattern respectively. The method addresses the problem in which a metal surface is readily oxidizable when performing an annealing treatment, thereby improving the product yield.

At least one method, apparatus and system disclosed involves a semiconductor substrate on which NMOS and PMOS devices with enhanced current drives may be formed. A first substrate having an enhanced electron mobility is formed. A second substrate having an enhanced hole mobility is formed. The first substrate and the second substrate are bonded for forming a third substrate. A first channel on the third substrate characterized by the enhanced electron mobility is formed. A second channel on the third substrate characterized by the enhanced hole mobility is formed.