An image sensor is described having a pixel cell unit. The pixel cell unit has first, second and third transfer gate transistor gates on a semiconductor surface respectively coupled between first, second and third visible light photodiode regions and a first capacitance region. The pixel cell unit has a fourth transfer gate transistor gate on the semiconductor surface coupled between a first infrared photodiode region and a second capacitance region.

A speckle pattern is effectively utilized. An information processing apparatus is an information processing apparatus including a light output unit and an acquisition unit. The light output unit included in the information processing apparatus is for outputting a plurality of light beams for generating a speckle pattern, to a plurality of locations of objects which are within an imaging range. Also, the acquisition unit included in the information processing apparatus is for acquiring the speckle patterns formed by scattering of the plurality of light beams striking the plurality of locations on a location-by-location basis.

A speckle pattern is effectively utilized. An information processing apparatus is an information processing apparatus including a light output unit and an acquisition unit. The light output unit included in the information processing apparatus is for outputting a plurality of light beams for generating a speckle pattern, to a plurality of locations of objects which are within an imaging range. Also, the acquisition unit included in the information processing apparatus is for acquiring the speckle patterns formed by scattering of the plurality of light beams striking the plurality of locations on a location-by-location basis.