A light-emitting diode 100 includes a first region 1, for example of the P type, formed in a first layer 10 and forming, in a direction normal to a basal plane, a stack with a second region 2 having at least one quantum well formed in a second layer 20, and including a third region 3, for example of the N type, extending in the direction normal to the plane, bordering and in contact with the first and second regions 1, 2, through the first and second layers 10, 20. A process for producing a light-emitting diode 100 in which the third region 3 is formed by implantation into and through the first and second layers 10, 20.

The present disclosure provides a growth method and structure of LED epitaxy. The growth method of LED epitaxy comprises: providing a layer of substrate, wherein the substrate is an Al.sub.2O.sub.3 substrate or an Al.sub.2O.sub.3/SiO.sub.2 composite substrate; successively depositing and growing a SiC buffer layer and a u-GaN layer on the substrate; wherein the temperature used for depositing the SiC buffer layer is 6501550 degrees; the gas used for depositing the SiC buffer layer is a silicon source gas and a carbon source gas, a flow rate of the silicon source gas is 11000 sccm, and a flow rate of the carbon source gas is 11000 sccm; a gas carrier gas used for depositing the SiC buffer layer has a flow rate of 10500 slm; the SiC buffer layer is deposited at a pressure of 100700 torr; the SiC buffer layer is deposited for a thickness of 101000 A.

A light-emitting diode and a light-emitting device are provided. A transparent conductive layer, a current blocking layer and a first metal reflective layer are sequentially arranged on a side of a second semiconductor layer away from an active layer. A side of the first metal reflective layer adjacent to the current blocking layer is a first Al reflective layer, and metal Al has high reflectivity in a short-wave band, increasing the reflection of light radiated by the active layer. Since there is no need to form an adhesion layer between the first Al reflective layer and the current blocking layer, there is no light absorption problem of the adhesion layer. A projection area of the first metal reflective layer is greater than or equal to that of the transparent conductive layer, so that the first metal reflective layer can cover a larger light-emitting surface, thereby further improving the light reflection.

The present inventive concept relates to an RGB micro-light-emitting diode having a vertically-stacked structure with corner mesa contact structures, and a manufacturing method thereof. The RGB micro-light-emitting diode having a vertically-stacked structure with corner mesa contact structures includes an n-type contact electrode layer, a first light-emitting structure, a common electrode layer, a second light-emitting structure, a tunnel junction layer, and a third light-emitting structure, which are sequentially stacked on a substrate. The RGB micro-light-emitting diode with a reduced unit area can be easily manufactured by forming the corner mesa contact structure on each of the n-type contact electrode layers by etching the vertically-stacked structure, forming contact structures on the n-type contact electrode layers, followed by electrical connection.