A power semiconductor with a Schottky contact structure includes gate regions spaced apart by a predetermined interval in a first direction; a highly doped source region of a first conductivity-type positioned between the gate regions; a source contact region disposed on the highly doped source region of the first conductivity-type; a plurality of buried pillar regions of a second conductivity-type spaced at a preset interval in a second direction intersecting the first direction; and Schottky contact regions formed at a point where the plurality of buried pillar regions of the second conductivity-type intersect with the gate regions.

A device is disclosed. The device includes a gallium nitride (GaN)-based substrate including a two-dimensional electron gas (2DEG) layer, a source region including a source electrode, a drain region separate from the source region, a gate region disposed between the source region and the drain region, the gate region including a P-type GaN layer and a gate electrode disposed on a top surface of the P-type GaN layer, wherein the gate electrode extends from a first edge to a second edge; and a field plate electrically coupled to the gate electrode at a junction. In one aspect, the field plate extends from the junction towards the source region, beyond the first edge, to a first distal end that is proximate the source electrode. In another aspect, the field plate extends from the junction towards the drain region, beyond the second edge, to a second distal end.