A transient voltage suppression (TVS) device, apparatus, structure and associated methods thereof. The TVS device includes a substrate, a first base layer, and a second base layer, the substrate coupled to the first base layer, and coupled to the second base layer, and one or more emitter layers formed in the first base layer.

A transient voltage suppression device, apparatus, structure and associated methods thereof. The device includes a first voltage suppression device having a substrate, a first base layer, and a second base layer. The substrate is coupled to the first base layer, and to the second base layer. The device includes a second voltage suppression device having a substrate, a first base layer, a second base layer, and a third base layer. The second voltage suppression device substrate is coupled to the second voltage suppression device first, second and third base layers. The second voltage suppression device first base layer includes one or more first regions. The second voltage suppression device includes a doping region disposed across at least portions of the second voltage suppression device first base layer and the second voltage suppression device substrate. The first voltage suppression device is coupled to the second voltage suppression device.

A silicon carbide semiconductor device has a silicon carbide semiconductor substrate of a first conductivity type; a first semiconductor layer of the first conductivity type; a second semiconductor layer of a second conductivity type; first semiconductor regions of the first conductivity type; trenches; gate insulating films; gate electrodes; first high-concentration regions of the second conductivity type provided at positions facing the trenches in a depth direction; second high-concentration regions of the second conductivity type, selectively provided between the trenches and in contact with the first semiconductor regions, each having an upper surface exposed at the surface of the second semiconductor layer and a lower surface partially in contact with upper surfaces of the first high-concentration regions; a first electrode; and a second electrode. The second high-concentration regions are disposed periodically in a longitudinal direction of the trenches.

A method may include providing a semiconductor substrate, comprising a first layer of a first thickness dopant, a first dopant polarity, and a first dopant concentration; and a second layer having a second thickness greater than the first thickness, a second polarity, and second dopant concentration, wherein the second layer defines a second dopant concentration, greater than the first dopant concentration. The method may further include forming a separation diffusion region having a dopant of the second dopant polarity around a periphery of the first layer, where the separation diffusion region extends from a first surface to a separation depth, greater than the first thickness of the first layer. The method may also include performing a thinning of the semiconductor substrate by removing a portion of the second layer from the second surface, wherein after the thinning, the second layer comprises a third thickness, less than the first thickness.