An electric motor (20) for an elevator system (2) comprises a housing (25) extending in a longitudinal direction along a longitudinal axis (A) and a cover (22) attached to a front face of the housing (25). The cover (22) comprises an open space (24) formed around the longitudinal axis (A). At least one electric connector (38, 40), which is electrically connectable with component of the electric motor (20), is arranged within said open space (24).

In a machine-room-less elevator, a hoisting machine is disposed directly above a counterweight. A counterweight speed governor is disposed higher than a position of the counterweight if a car descends to a floor portion of a hoistway and the counterweight jumps upward. When viewed from directly above, at least a portion of the counterweight speed governor is disposed at an identical position to a first counterweight guide rail in a width direction of the counterweight, and is disposed at an identical position to a portion of a suspending body between a driving sheave and a counterweight suspending sheave in a direction that is perpendicular to the width direction of the counterweight.

An elevator is disclosed. The elevator comprises a first upright U-channel guide rail parallel to and opposing a second upright U-channel guide rail. The elevator also comprises a slider with a first side and an opposing second side, wherein a first wheel is attached to the first side and a second wheel is attached to the second side. Some embodiments may comprise additional wheels. The first wheel rolls up and down within the first guide rail, and the second wheel rolls up and down within the second guide rail. A platform extends from the slider. The elevator also comprises a hoist mechanism and a closed loop lifting cable attached to the slider. The hoist mechanism is configured to move the lifting cable and thereby, in cooperation with pulleys, to lift and lower the platform. Preferred embodiments also include a centrifugal brake system and walls and a ceiling on the platform.

Provided is a semiconductor device including: a semiconductor element including a first electrode, a second electrode, and a gate electrode; a surge voltage measuring unit electrically connected to the first electrode or the second electrode and configured to measure a surge voltage; a variable resistor electrically connected to the gate electrode; a comparator configured to compare a surge voltage measurement value, which is acquired by measuring the surge voltage generated by a first pulse applied to the gate electrode by the surge voltage measuring unit, with a surge voltage target value; a determination unit configured to determine a setting value of a resistance value of the variable resistor based on the comparison result by the comparator; and an instruction unit configured to instruct the setting value to the variable resistor.

A semiconductor device according to an embodiment is a semiconductor device including: a first diode having a first anode and a first cathode, the first anode for electrically connecting to one of a first electrode and a second electrode of a semiconductor element including the first electrode, the second electrode, and a gate electrode; a first capacitor having a first end electrically connected to the first cathode, and a first other end; a bias element having a first bias element end electrically connected to the first cathode and the first end, and a second bias element end for electrically connecting to a positive electrode of a direct-current power supply including the positive electrode and a negative electrode; a second diode having a second anode and a second cathode, the second anode electrically connected to the first other end; a second capacitor having a second end and a second other end, the second end electrically connected to the second cathode; a switch electrically connected in parallel to the second capacitor between the second end and the second other end; an analog-digital converter or sample-and-hold circuit electrically connected to the second cathode and the second end; and a third diode having a third anode and a third cathode, the third anode electrically connected to the second other end, and the third cathode electrically connected to the first other end and the second anode.

A semiconductor device of an embodiment includes a silicon carbide layer having first and second plane, the silicon carbide layer including trench having a first portion and a second portion, the second portion having a width smaller than the first portion, an n-type first silicon carbide region, a p-type second silicon carbide region between the first silicon carbide region and the first plane, a p-type third silicon carbide region between the second silicon carbide region and the first plane and having a p-type impurity concentration lower than the second silicon carbide region, an n-type fourth silicon carbide region between the third silicon carbide region and the first plane, and an n-type fifth silicon carbide region between the second portion and the second silicon carbide region and having an n-type impurity concentration higher than the first silicon carbide region; and a gate electrode in the trench.

A method for dynamic braking of a permanent magnet motor, and an elevator utilizing thereof, are presented. The arrangement includes a corresponding number of phase legs and input connectors relative to a number of the plurality of motor windings, wherein each one of the input connectors is coupled to a respective one of the phase legs. At least some of the phase legs comprise at least two semiconductor devices. Second terminals of the phase legs are connected to each other, wherein the arrangement includes a number of semiconductor switches configured for forming a short-circuit between each of the plurality of motor windings.

A semiconductor device of an embodiment includes a SiC layer including a first trench, a second trench having first and second regions, an n-type first SiC region, a p-type second SiC region, an n-type third SiC region, a p-type fourth SiC region between the first trench and the first SiC region, and a p-type fifth SiC region between the second trench and the first SiC region and having a first portion and a second portion, a gate electrode in the first trench, a first electrode in the second trench, and a second electrode. A distance between the first trench and the first region is greater than a distance between the first trench and the second region, the first portion is separated from the fourth SiC region, the second portion contacts the fourth SiC region, the first region contacts the first portion, and the second region contacts the second portion.

An electric motor and an elevator system. The electric motor includes: a casing; a stator supported by the casing, the stator including a stator yoke and stator teeth, and a winding being wound around the stator teeth and generating a magnetic field when energized; and a rotor which rotates under the action of the magnetic field; wherein at least a portion of the stator yoke is formed as a moving plate which is movable between a first position and a second position; and when the winding is energized, the moving plate is capable of moving from the first position to the second position under the action of the magnetic field, and in the second position, the moving plate is separated from the rotor; and after the winding is de-energized, the moving plate is moved from the second position to the first position under the action of a spring force.

An elevator drive unit includes a drive shaft having at least one drive section for driving a drive belt. The drive unit also includes an electromotor, for driving the drive shaft having a stator and a rotor, a brake for braking the drive shaft, and a frame for supporting the drive shaft, the stator and the brake.