A method includes fusion bonding a first side of a MEMS wafer to a second side of a first handle wafer. A TSV is formed from a first side of the first handle wafer to the second side of the first handle wafer and into the first MEMS wafer. A dielectric layer is formed on the first side of the first handle wafer. A tungsten via is formed in the dielectric layer. Electrodes are formed on the dielectric layer. A second MEMS wafer is eutecticly bonded with a first eutectic bond to the electrodes, wherein the TSV electrically connects the first MEMS wafer to the second MEMS wafer. Standoffs are formed on a second side of the first MEMS wafer. A CMOS wafer is eutecticly bonded with a second eutectic bond to the standoffs, wherein the second eutectic bond includes different materials than the first eutectic bond.

Disclosed are methods for determining and classifying aircraft air contaminants using contaminant analyzers comprising a contaminant collector comprising a membrane and a heater vaporizing captured contaminants; a gravimetric sensor generating a proportionate response when contaminant mass is added to or removed from the sensor, the sensor arranged to receive contaminants desorbed from the membrane when the membrane is heated; a frequency measurement device, measuring the response generated by the sensor as the contaminant is added to and removed from the sensor; a computer readable medium bearing a contaminant recognition program and calibration data; a processor executing the recognition program, the program including a module classifying contaminants by type, and a module using the calibration data for comparison with magnitude of the response generated by the sensor to calculate contaminant concentration; and, a pump, generating flow of aircraft air through the contaminant collector before and after the membrane is heated.

The present disclosure proposes a micro power generation device including a plurality of generators stacked one above the other. Each of the plurality of generators includes: an upper electrode and a lower electrode spaced up and down; a spacer provided between peripheral edges of the upper electrode and the lower electrode; an upper friction material layer provided on a side of the upper electrode facing the lower electrode; and a lower friction material layer provided on a side of the lower electrode facing the upper electrode. The upper friction material layer, the lower friction material layer and the spacer together form a cavity. An intermediate spacer is provided between each adjacent two generators, each adjacent two generators and the intermediate spacer together form an intermediate cavity, and the intermediate cavity is filled with gas. A cavity of an upper one of any two adjacent generators communicates with the intermediate cavity between the two adjacent generators.

The present disclosure relates to a microphone. In some embodiments, the microphone may comprise a diaphragm, a backplate, and a sidewall stopper. The diaphragm has a venting hole disposed therethrough. The backplate is disposed over and spaced apart from the diaphragm. The sidewall stopper is disposed along a sidewall of the diaphragm exposing to the venting hole. Thus, the sidewall stopper is not limited by a distance between the movable part and the stable part of the microphone. Also, the sidewall stopper does not alternate the shape of movable part, and thus will less likely introduce crack to the movable part. In some embodiments, the sidewall stopper may be formed like a sidewall stopper by a self-alignment process, such that no extra mask is needed.

The present disclosure relates to a method of manufacturing a MEMS device. In some embodiments, a first interlayer dielectric layer is formed over a substrate, and a diaphragm is formed over the first interlayer dielectric layer. Then, a second interlayer dielectric layer is formed over the diaphragm. A first etch is performed to form an opening through the second interlayer dielectric layer and the diaphragm and reaching into an upper portion of the first interlayer dielectric layer. A second etch is performed to the first interlayer dielectric layer and the second interlayer dielectric layer to form recesses above and below the diaphragm and to respectively expose a portion of a top surface and a portion of a bottom surface of the diaphragm. A sidewall stopper is formed along a sidewall of the diaphragm into the recesses of the first interlayer dielectric layer and the second interlayer dielectric layer.

The present disclosure relates to fluidic systems and devices for processing, extracting, or purifying one or more analytes. These systems and devices can be used for processing samples and extracting nucleic acids, for example by isotachophoresis. In particular, the systems and related methods can allow for extraction of nucleic acids, including non-crosslinked nucleic acids, from samples such as tissue or cells. The systems and devices can also be used for multiplex parallel sample processing.

Methods for determining and classifying by type aircraft air contaminants, and aircraft air contaminant analyzers, are disclosed.

The present disclosure relates to a microphone. In some embodiments, the microphone may comprise a substrate, a diaphragm, a backplate, and a sidewall stopper. The substrate has an opening disposed through the substrate. The diaphragm is disposed over the substrate and facing the opening of the substrate. The diaphragm has a venting hole overlying the opening of the substrate. A backplate is disposed over and spaced apart from the diaphragm. A sidewall stopper is disposed along a sidewall of the venting hole of the diaphragm and thus is not limited by a distance between the movable part and the stable part. Also, the sidewall stopper does not alternate the shape of movable part, and thus will less likely introduce crack to the movable part. In some embodiments, the sidewall stopper may be formed like a sidewall stopper by a self-alignment process, such that no extra mask is needed.

A method for fabricating a stacked nanopore includes forming a stack of layers having alternating conductive lines and dielectric layers on a substrate, and patterning the stack to form a staircase structure with the conductive lines having a length gradually changing at each level in the stack. The method also includes depositing and planarizing a dielectric material over the staircase structure, forming contacts through the dielectric material to the conductive lines for each level of conductive lines, etching a nanopore through the stack of layers to form pairs of opposing electrodes across the nanopore using the conductive lines; and opening up the substrate to expose the nanopore.

Techniques regarding a vertical nanofluidic channel array are provided. For example, one or more embodiments described herein can regard an apparatus that can comprise a semiconductor substrate and a dielectric layer adjacent to the semiconductor substrate. The dielectric layer can comprise a first nanofluidic channel and a second nanofluidic channel. The second nanofluidic channel can be located between the first nanofluidic channel and the semiconductor substrate.