A semiconductor structure includes a first device, a second device, a first hole, a second hole, and a sealing object. The second device is contacted to the first device, wherein a chamber is formed between the first device and the second device. The first hole is disposed in the second device and defined between a first end with a first circumference and a second end with a second circumference. The second hole is disposed in the second device and aligned to the first hole. The sealing object seals the second hole. The first end links with the chamber, and the first circumference is different from the second circumference.

One or more stopper features (e.g., bump structures) are formed in a standard ASIC wafer top passivation layer for preventing MEMS device stiction vertically in integrated devices having a MEMS device capped directly by an ASIC wafer. A TiN coating may be used on the stopper feature(s) for anti-stiction. An electrical potential may be applied to the TiN anti-stiction coating of one or more stopper features.

A method includes forming a MEMS device, forming a bond layer adjacent the MEMS device, and forming a protection layer over the bond layer. The steps of forming the bond layer and the protection layer include in-situ deposition of the bond layer and the protection layer.

An anti-stiction layer is formed from a first organosilane precursor. A second organosilane precursor is introduced around the workpiece with the anti-stiction layer. The second organosilane precursor is different from the first organosilane precursor. The second organosilane precursor is configured to eliminate defect sites and unreacted sites on the anti-stiction layer and on a surface of the workpiece that includes the anti-stiction layer.

A method includes forming a bumpstop from a first intermetal dielectric (IMD) layer and forming a via within the first IMD, wherein the first IMD is disposed over a first polysilicon layer, and wherein the first polysilicon layer is disposed over another IMD layer that is disposed over a substrate. The method further includes depositing a second polysilicon layer over the bumpstop and further over the via to connect to the first polysilicon layer. A standoff is formed over a first portion of the second polysilicon layer, and wherein a second portion of the second polysilicon layer is exposed. The method includes depositing a bond layer over the standoff.

The present disclosure provides a semiconductor structure and a method for fabricating semiconductor structure. The semiconductor structure includes a first device, configured to be a complementary metal oxide semiconductor device, wherein the first device includes a substrate, a multi-layer structure disposed on the substrate, a first hole, defined between a first end with a first circumference and a second end with a second circumference, a second hole, aligned to the first hole and defined between the second end and a third end with a third circumference, wherein the third circumference is larger than the first circumference and the second circumference, and a second device, configured to be a micro-electro mechanical system device and bonded to the first device, wherein a first chamber is between the first device and the second device, and the first end links with the first chamber, and a sealing object configured to seal the second hole.

A device includes a substrate comprising a first standoff, a second standoff, a third standoff, a first cavity, a second cavity, and a bonding material covering a portion of the first, the second, and the third standoff. The first cavity is positioned between the first and the second standoffs, and the second cavity is positioned between the second and the third standoffs. The first cavity comprises a first cavity region and a second cavity region separated by a portion of the substrate extruding thereto, and wherein a depth associated with the first cavity region is greater than a depth associated with the second cavity. A surface of the first cavity is covered with a getter material.

A device includes a substrate comprising a first standoff, a second standoff, a third standoff, a first cavity, a second cavity, and a bonding material covering a portion of the first, the second, and the third standoff. The first cavity is positioned between the first and the second standoffs, and the second cavity is positioned between the second and the third standoffs. The first cavity comprises a first cavity region and a second cavity region separated by a portion of the substrate extruding thereto, and wherein a depth associated with the first cavity region is greater than a depth associated with the second cavity. A surface of the first cavity is covered with a getter material.

In examples, a microelectromechanical systems (MEMS) device comprises a moveable element configured to contact a portion of a surface, and a film formed of a self-assembled lubricant, the lubricant comprising a compound having (i) an oxoacid moiety and (ii) a hydrophobic moiety with an A value of equal to or greater than about 3 kilocalories/mole on the portion of the surface.

A method includes: receiving a first substrate; forming a bonding layer on a second substrate; bonding the second substrate to the first substrate; forming a movable membrane on the second substrate, the forming including performing an etching operation to form a through via through a thickness of the second substrate; and forming a first anti-stiction structure on a surface of the movable membrane. The forming of the first anti-stiction structure is performed at a same time as at least one of the etching operation of the through via and the forming of the bonding layer.