The present disclosure relates to a microelectromechanical systems (MEMS) apparatus. The MEMS apparatus includes a base substrate and a conductive routing layer disposed over the base substrate. A bump feature is disposed directly over the conductive routing layer. Opposing outermost sidewalls of the bump feature are laterally between outermost sidewalls of the conductive routing layer. A MEMS substrate is bonded to the base substrate and includes a MEMS device directly over the bump feature. An anti-stiction layer is arranged on one or more of the bump feature and the MEMS device.

The present disclosure provides a method of manufacturing a structure. The method comprises: providing a first substrate; forming a conductive mesa over the first substrate; forming a silicon containing layer over the mesa; and forming a cavity comprising a movable member proximal to the first substrate.

The present disclosure relates to a method for manufacturing a microelectromechanical systems (MEMS) package. The method comprises providing a CMOS IC including CMOS devices arranged within a CMOS substrate. The method further comprises forming and patterning a metal layer over the CMOS substrate to form an anti-stiction layer and a fixed electrode plate and forming a rough top surface for the anti-stiction layer. The method further comprises providing a MEMS IC comprising a moveable mass arranged within a recess of a MEMS substrate and bonding the CMOS IC to the MEMS IC to enclose a cavity between the moveable mass and the fixed electrode plate and the anti-stiction layer.

The present disclosure relates to a MEMS apparatus with a patterned anti-stiction layer, and an associated method of formation. The MEMS apparatus has a handle substrate defining a first bonding face and a MEMS substrate having a MEMS device and defining a second bonding face. The handle substrate is bonded to the MEMS substrate through a bonding interface with the first bonding face toward the second bonding face. An anti-stiction layer is arranged between the first and the second bonding faces without residing over the bonding interface.

A method for manufacturing a micromechanical inertial sensor, including: forming a movable MEMS structure in a MEMS wafer; connecting a cap wafer to the MEMS wafer; forming an access opening into the cavity, the access opening to the cavity being formed from two opposing sides; a defined narrow first access opening being formed from one side of the movable MEMS structure and a defined wide second access opening being formed from a surface of the MEMS wafer, the second access opening being formed to be wider in a defined manner than the first access opening; and closing the first access opening while enclosing a defined internal pressure in the cavity.

A electromechanical relay device (100) comprising a source electrode (102), a beam (104) mounted on the source electrode at a first end and electrically coupled to the source electrode; a first drain electrode (112) located adjacent a second end of the beam, wherein a first contact (110) on the beam is arranged to be separated from a second contact (112) on the first drain electrode when the relay device is in a first condition; a first gate electrode (106 arranged to cause the beam to deflect, to electrically couple the first contact and the second contact such that the device is in a second condition; and wherein the first and second contacts are each coated with a layer of nanocrystalline graphite.

The present disclosure, in some embodiments, relates to a method for manufacturing a MEMS apparatus. The method may be performed by forming an anti-stiction layer on one or more respective surfaces of a handle substrate and a MEMS substrate. The anti-stiction layer is patterned, therein defining a patterned anti-stiction layer that uncovers one or more predetermined locations associated with a bonding of the handle substrate to the MEMS substrate. The handle substrate is bonded to the MEMS substrate at the one or more predetermined locations.

The present disclosure relates to a microelectromechanical systems (MEMS) package featuring a flat plate having a raised edge around its perimeter serving as an anti-stiction device, and an associated method of formation. A CMOS IC is provided having a dielectric structure surrounding a plurality of conductive interconnect layers disposed over a CMOS substrate. A MEMS IC is bonded to the dielectric structure such that it forms a cavity with a lowered central portion the dielectric structure, and the MEMS IC includes a movable mass that is arranged within the cavity. The CMOS IC includes an anti-stiction plate disposed under the movable mass. The anti-stiction plate is made of a conductive material and has a raised edge surrounding at least a part of a perimeter of a substantially planar upper surface.

A semiconductor device and its manufacturing method, relating the semiconductor techniques. The semiconductor device manufacturing method comprises: providing a first semiconductor structure, wherein the first semiconductor structure comprises a first part comprising a plurality of films separated from each other, and a first bonding component on the first part; forming an anti-stick layer on the first part covering the plurality of films; providing a second semiconductor structure comprising a second part and a second bonding component on the second part; and bonding the first bonding component with the second bonding component, so that the first part is bonded to the second part. This inventive concept prevents the adhesion of neighboring films in a semiconductor device.

A method for treating a micro electro-mechanical system (MEMS) component is disclosed. In one example, the method includes the steps of providing a first wafer, treating the first wafer to form cavities and at least an oxide layer on a top surface of the first wafer using a first chemical vapor deposition (CVD) process, providing a second wafer, bonding the second wafer on a top surface of the at least one oxide layer, treating the second wafer to form a first plurality of structures, depositing a layer of Self-Assembling Monolayer (SAM) to a surface of the MEMS component using a second CVD process.