B81B3/0008

Physical quantity sensor manufacturing method, physical quantity sensor, electronic device, and vehicle
10850975 · 2020-12-01 · ·

A manufacturing method of a physical quantity sensor includes forming first and second fixed electrodes, and a dummy electrode on a substrate; and a movable body forming. The electrode forming includes forming a first mask layer on the substrate, forming a first electrode material layer by forming a first conductive layer on the substrate and the first mask layer, forming a second conductive layer on the substrate and the first electrode material layer, forming a second mask layer by forming a mask material layer on the second conductive layer, and removing a part of a section of the mask material layer not overlapping the first electrode material layer in plan view, and forming a second electrode material layer by etching the second conductive layer, with the second mask layer as a mask such that the second conductive layer is provided on the first electrode material layer and on the substrate.

MEMS sensor compensation for off-axis movement

A microelectromechanical system (MEMS) sensor includes a MEMS layer that includes fixed and movable electrodes. In response to an in-plane linear acceleration, the movable electrodes move with respect to the fixed electrodes, and acceleration is determined based on the resulting change in capacitance. A plurality of auxiliary electrodes are located on a substrate of the MEMS sensor and below the MEMS layer, such that a capacitance between the MEMS layer and the auxiliary loads changes in response to an out-of-plane movement of the MEMS layer or a portion thereof. The MEMS sensor compensates for the acceleration value based on the capacitance sensed by the auxiliary electrodes.

FENCE STRUCTURE TO PREVENT STICTION IN A MEMS MOTION SENSOR
20200140265 · 2020-05-07 ·

The present disclosure relates to a microelectromechanical systems (MEMS) package featuring a flat plate having a raised edge around its perimeter serving as an anti-stiction device, and an associated method of formation. A CMOS IC is provided having a dielectric structure surrounding a plurality of conductive interconnect layers disposed over a CMOS substrate. A MEMS IC is bonded to the dielectric structure such that it forms a cavity with a lowered central portion the dielectric structure, and the MEMS IC includes a movable mass that is arranged within the cavity. The CMOS IC includes an anti-stiction plate disposed under the movable mass. The anti-stiction plate is made of a conductive material and has a raised edge surrounding at least a part of a perimeter of a substantially planar upper surface.

Systems, devices, and methods for reducing surface dielectric charging in a RF MEMS actuator element

The present subject matter relates to systems, devices, and methods for reducing surface dielectric charging in a RF MEMS actuator element. In particular, a micro-electro-mechanical systems (MEMS) can comprise a fixed electrode positioned on a substrate, a moveable electrode positioned substantially above the fixed electrode and separated from the fixed electrode by a gap, and at least one standoff bump positioned between the fixed electrode and the moveable electrode, wherein the at least one standoff bump extends into the gap. In this configuration, one or both of the fixed electrode or the moveable electrode can be patterned to define one or more hole that is substantially aligned with the one or more of the at least one standoff bump. The bump and the hole can both help to reduce the rate of surface dielectric charging and the total amount of charge generated.

MEMS structure with bilayer stopper and method for forming the same

Microelectromechanical systems (MEMS) packages and methods for forming the same are provided. The MEMS package includes a semiconductor substrate having a metallization layer over the semiconductor substrate. The MEMS package also includes a first planarization layer and an overlying second planarization layer over the metallization layer. The planarization structure has a first cavity therein exposing the metallization layer. The MEMS package also includes a MEMS device structure bonded to the second planarization layer. The MEMS device structure includes a moveable element over the first cavity. The MEMS package also includes a first stopper placed on the exposed metallization layer in the first cavity. The first stopper includes a patterned conductive layer and an underlying patterned insulating layer.

MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) THERMAL SENSOR

The structure of a micro-electro-mechanical system (MEMS) thermal sensor and a method of fabricating the MEMS thermal sensor are disclosed. A method of fabricating a MEMS thermal sensor includes forming first and second sensing electrodes with first and second electrode fingers, respectively, on a substrate and forming a patterned layer with a rectangular cross-section between a pair of the first electrode fingers. The first and second electrode fingers are formed in an interdigitated configuration and suspended above the substrate. The method further includes modifying the patterned layer to have a curved cross-section between the pair of the first electrode fingers, forming a curved sensing element on the modified patterned layer to couple to the pair of the first electrodes, and removing the modified patterned layer.

MEMS Structure and Method of Forming Same
20200067425 · 2020-02-27 ·

A microelectromechanical system (MEMS) device includes a substrate and a movable element at least partially suspended above the substrate and having at least one degree of freedom. The MEMS device further includes a protrusion extending from the substrate and configured to contact the movable element when the movable element moves in the at least one degree of freedom, wherein the protrusion comprises a surface having a water contact angle of higher than about 15 measured in air.

Fence structure to prevent stiction in a MEMS motion sensor

The present disclosure relates to a microelectromechanical systems (MEMS) package featuring a flat plate having a raised edge around its perimeter serving as an anti-stiction device, and an associated method of formation. A CMOS IC is provided having a dielectric structure surrounding a plurality of conductive interconnect layers disposed over a CMOS substrate. A MEMS IC is bonded to the dielectric structure such that it forms a cavity with a lowered central portion the dielectric structure, and the MEMS IC includes a movable mass that is arranged within the cavity. The CMOS IC includes an anti-stiction plate disposed under the movable mass. The anti-stiction plate is made of a conductive material and has a raised edge surrounding at least a part of a perimeter of a substantially planar upper surface.

MEMS structure and method of forming same

A microelectromechanical system (MEMS) device includes a substrate and a movable element at least partially suspended above the substrate and having at least one degree of freedom. The MEMS device further includes a protrusion extending from the substrate and configured to contact the movable element when the movable element moves in the at least one degree of freedom, wherein the protrusion comprises a surface having a water contact angle of higher than about 15 measured in air.

MEMS AND METHOD OF MANUFACTURING THE SAME
20190382257 · 2019-12-19 ·

A MEMS includes a substrate having a cavity, and a moveable element arranged in the cavity, the moveable element including a first electrode, a second electrode and a third electrode that is arranged between the first electrode and the second electrode and is fixed in an electrically insulated manner from the same at discrete areas. The moveable element is configured to perform a movement along a movement direction in a substrate plan in response to an electric potential between the first electrode and the third electrode or in response to an electric potential between the second electrode and the third electrode. A dimension of the third electrode perpendicular to the substrate plane is lower than a dimension of the first electrode and a dimension of the second electrode perpendicular to the substrate plane.