Provided is a MEMS microphone structure (1) and, more particularly, to a MEMS microphone structure (1) that ensures excellent sensitivity by including and/or forming a lower electrode (410) and an upper electrode (430) with a diaphragm (110) in a bending area (A1) so that the maximum bending displacement of the diaphragm (110) is controlled by a dielectrophoretic (DFP) force together with sound pressure.

A method includes fusion bonding a handle wafer to a first side of a device wafer. The method further includes depositing a first mask on a second side of the device wafer, wherein the second side is planar. A plurality of dimple features is formed on an exposed portion on the second side of the device wafer. The first mask is removed from the second side of the device wafer. A second mask is deposited on the second side of the device wafer that corresponds to a standoff. An exposed portion on the second side of the device wafer is etched to form the standoff. The second mask is removed. A rough polysilicon layer is deposited on the second side of the device wafer. A eutectic bond layer is deposited on the standoff. In some embodiments, a micro-electro-mechanical system (MEMS) device pattern is etched into the device wafer.

A semiconductor device includes a substrate, a movable portion provided on the substrate, a junction frame provided on the substrate to surround the movable portion, a cap bonded to the junction frame, the cap having a recessed portion and covering a space over the movable portion with the recessed portion facing the movable portion, the cap having an inside wall provided with irregularities, and a prevention film formed on the inside wall of the cap, the prevention film having irregularities on a surface thereof.

A method of manufacturing a MEMS device, wherein the MEMS device has a cavity in which a beam will move to change the capacitance of the device. After most of the device build-up has occurred, sacrificial material is removed to free the beam within the MEMS device cavity. Thereafter, exposed ruthenium contacts are etched back with an etchant comprising chlorine to remove the top surface of both the top and bottom contacts. Due to this etch back process, low contact resistance can be achieved with less susceptibility to stiction events. Stiction performance can be further improved by conditioning the ruthenium contacts in a fluorine based plasma. The fluorine based plasma process, or fluorine treatment, can be performed prior to or after etch-back process of the ruthenium contacts.

A physical quantity sensor includes a substrate, a movable body that is provided displaceably in a state of being opposed to the substrate and is provided with a first through-hole and a second through-hole as through-holes, and a protrusion configured integrally with the substrate at a side of the movable body of the substrate, and in which the protrusion is provided at a position where the protrusion overlaps the through-hole and the movable body in plan view.

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a first dielectric layer formed over the substrate. The semiconductor device structure also includes a first movable membrane formed over the first dielectric layer. In addition, the first movable membrane has a first corrugated portion and a first edge portion connecting to the first corrugated portion. The semiconductor device structure further includes a second dielectric layer formed over the first movable membrane. In addition, the first edge portion is sandwiched between the first dielectric layer and the second dielectric layer, the first corrugated portion is partially sandwiched between the first dielectric layer and the second dielectric layer and is partially exposed by a cavity, and a bottom surface of the first corrugated portion is lower than a bottom surface of the first edge portion.

The invention provides a method for manufacturing a MEMS microphone, including the steps of: providing a base and preparing a first diaphragm on a first surface of the base; preparing a back plate on a surface of the first diaphragm opposite to the first surface; forming a first gap between the first diaphragm and the back plate; preparing a second diaphragm; forming a second gap between the second diaphragm and the back plate; preparing electrodes; forming a back cavity by etching the surface opposite to the first surface.

A micro-electro mechanical system (MEMS) device includes a MEMS substrate, at least one movable element laterally confined within a matrix layer that overlies the MEMS substrate, and a cap substrate bonded to the matrix layer through bonding material portions. A first movable element selected from the at least one movable element is located inside a first chamber that is laterally bounded by the matrix layer and vertically bounded by a first capping surface that overlies the first movable element. The first capping surface includes an array of downward-protruding bumps including respective portions of a dielectric material layer. Each of the downward-protruding bumps has a vertical cross-sectional profile of an inverted hillock. The MEMS device can include, for example, an accelerometer.

The present invention relates to a MEMS acoustic sensor for sensing variable capacitance between a flexible diaphragm and a back plate. The MEMS acoustic sensor is composed of a substrate comprising a cavity, a back plate supported on the substrate and comprising a plurality of through holes, an electrode formed on the inner surface of the back plate, at least one anchor protruding from the back plate toward the substrate, a diaphragm supported by the at least one anchor and deformed by a sound wave introduced from the outside through the cavity, and a stress release unit extending from the edge portion of the back plate and in contact with the substrate.

An ultrasonic transducer is described. The ultrasonic transducer comprises a membrane and a substrate disposed opposite the membrane such that a cavity is formed therebetween. The substrate comprises an electrode region and pedestals protruding from a surface of the substrate and having a height greater than a height of the electrode region, the pedestals being electrically isolated from the electrode region.