An optical device includes: a base; a movable portion including an optical function portion; an elastic support portion supporting the movable portion so that the movable portion is movable along a first direction; a first comb electrode provided to the base and including a plurality of first comb fingers; and a second comb electrode including a plurality of second comb fingers. The elastic support portion includes a torsion bar extending along a second direction perpendicular to the first direction and a lever. The second comb electrode is provided to a portion of at least one of the movable portion and the elastic support portion, the portion being located on the optical function portion side with respect to the torsion bar. The first comb finger and the second comb finger adjacent to each other face each other in a direction in which the movable portion has higher external force resistance, of the second direction and a third direction perpendicular to the first direction and the second direction.

An electrostatic actuator includes a fixed electrode and a movable electrode arranged to face the fixed electrode. The movable electrode is configured to be displaceable with respect to the fixed electrode and a fixed portion. An attractive force acts between the movable electrode and the fixed portion. In the electrostatic actuator, a non-linear vibration of the movable electrode when a voltage is applied to the fixed electrode and the movable electrode is reduced by the attractive force acting between the movable electrode and the fixed portion.

Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure

Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a dielectric structure disposed over a first semiconductor substrate, where the dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the dielectric structure. The second semiconductor substrate includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. An anti-stiction structure is disposed between the movable mass and the dielectric structure, where the anti-stiction structure is a first silicon-based semiconductor.

Capped microelectromechanical systems (MEMS) devices are described. In at least some situations, the MEMS device includes one or more masses which move. The cap may include a stopper which damps motion of the one or more movable masses. In at least some situations, the stopper damps motion of one of the masses but not another mass.

In described examples, a system (e.g., a microelectromechanical system) includes a substrate, a support coupled to the substrate and a first and second element. The first element includes a contactor spring having a first portion coupled to the support and having a second portion including a cavity having a sloped surface. A clearance from the sloped surface to the substrate is widened as the sloped surface extends away from the first portion. The second portion includes a first contact surface adjacent to the sloped surface. The second element is coupled to the substrate and has a second contact surface adjacent to the first contact surface. One of the first element and the second element is adapted: in a first direction to urge the first contact surface and the second contact surface together; and in a second direction to urge the first contact surface and the second contact surface apart.

A method of manufacturing a semiconductor structure includes providing a first substrate, disposing and patterning a plate over the first substrate, disposing a first sacrificial oxide layer over the plate, forming a plurality of recesses over a surface of the first sacrificial oxide layer, disposing and patterning a membrane over the first sacrificial oxide layer, disposing a second sacrificial oxide layer to surround the membrane and cover the first sacrificial oxide layer; and forming a plurality of conductive plugs passing through the plate or the membrane, wherein the plate includes a semiconductive member and a tensile member, and the semiconductive member is disposed within the tensile member.

A microelectromechanical component including, vertically at a distance from one another, a substrate device, a first, a second, and a third functional layer, a vertical stop being formed between the second and third functional layer, the vertical stop having a stop area on a surface of the second functional layer facing the third functional layer, wherein the second functional layer is connected to the first functional layer in a connecting area allocated to the stop area.

A microelectromechanical system (MEMS) sensor includes a MEMS layer that includes fixed and movable electrodes. In response to an in-plane linear acceleration, the movable electrodes move with respect to the fixed electrodes, and acceleration is determined based on the resulting change in capacitance. A plurality of auxiliary electrodes are located on a substrate of the MEMS sensor and below the MEMS layer, such that a capacitance between the MEMS layer and the auxiliary loads changes in response to an out-of-plane movement of the MEMS layer or a portion thereof. The MEMS sensor compensates for the acceleration value based on the capacitance sensed by the auxiliary electrodes.

A semiconductor structure includes a first device and a second device. The first device includes a plate including a plurality of apertures; a membrane disposed opposite to the plate and including a plurality of corrugations, and a conductive plug extending through the plate and the membrane. The second device includes a substrate and a bond pad disposed over the substrate, wherein the conductive plug is bonded with the bond pad to integrate the first device with the second device, and the plate includes a semiconductive member and a tensile member, and the semiconductive member is disposed within the tensile member.