Microelectromechanical systems (MEMS) sensors and related bias voltage techniques are described. Exemplary MEMS sensors, such as exemplary MEMS acoustic sensors or microphones described herein can employ one or more bias voltage generators and single-ended or differential amplifier arrangements. Various embodiments are described that can effectively increase the bias voltage available to the sensor element without resorting to high breakdown voltage semiconductor processes. In addition, control of the one or more bias voltage generators in various operating modes is described, based on consideration of a number of factors.

A method and apparatus are provided to prevent or reduce stiction of a MEMS device. The MEMS device may include a protrusion extending from a surface of the MEMS device. During manufacture, the protrusion may be connected across an opening in the MEMS device to a sidewall of the substrate. Before manufacture of the MEMS device is completed, at least a portion of the protrusion connecting the MEMS device to the substrate may be removed. During operation, the protrusion may provide stiction prevention or reduction for the surface from which the first protrusion may extend. A plurality of protrusions may be formed along a plurality of surfaces for the MEMS device to prevent or reduce stiction along the corresponding surfaces. Protrusions may also be formed on devices surrounding or encapsulating the MEMS device to prevent or reduce stiction of the MEMS device to the surrounding or encapsulating devices.

Capped microelectromechanical systems (MEMS) devices are described. In at least some situations, the MEMS device includes one or more masses which move. The cap may include a stopper which damps motion of the one or more movable masses. In at least some situations, the stopper damps motion of one of the masses but not another mass.

A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.

A method for fabricating an integrated MEMS-CMOS device uses a micro-fabrication process that realizes moving mechanical structures (MEMS) on top of a conventional CMOS structure by bonding a mechanical structural wafer on top of the CMOS and etching the mechanical layer using plasma etching processes, such as Deep Reactive Ion Etching (DRIE). During etching of the mechanical layer, CMOS devices that are directly connected to the mechanical layer are exposed to plasma. This sometimes causes permanent damage to CMOS circuits and is termed Plasma Induced Damage (PID). Embodiments of the present invention presents methods and structures to prevent or reduce this PID and protect the underlying CMOS circuits by grounding and providing an alternate path for the CMOS circuits until the MEMS layer is completely etched.

Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a dielectric structure disposed over a first semiconductor substrate, where the dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the dielectric structure. The second semiconductor substrate includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. An anti-stiction structure is disposed between the movable mass and the dielectric structure, where the anti-stiction structure is a first silicon-based semiconductor.

Systems and methods for forming an electrostatic MEMS switch that is used to switch a source of current or voltage. At least one surface of the MEMS switch may be rotated on approach to another substrate, such that when the surfaces are separated, the forces are shearing forces rather than static frictional forces.

An optical device includes: a base; a movable portion including an optical function portion; an elastic support portion supporting the movable portion so that the movable portion is movable along a first direction; a first comb electrode provided to the base and including a plurality of first comb fingers; and a second comb electrode including a plurality of second comb fingers. The elastic support portion includes a torsion bar extending along a second direction perpendicular to the first direction and a lever. The second comb electrode is provided to a portion of at least one of the movable portion and the elastic support portion, the portion being located on the optical function portion side with respect to the torsion bar. The first comb finger and the second comb finger adjacent to each other face each other in a direction in which the movable portion has higher external force resistance, of the second direction and a third direction perpendicular to the first direction and the second direction.

A sound producing cell includes a membrane and an actuating layer. The membrane includes a first membrane subpart and a second membrane subpart, wherein the first membrane subpart and the second membrane subpart are opposite to each other. The actuating layer is disposed on the first membrane subpart and the second membrane subpart. The first membrane subpart includes a first anchored edge which is fully or partially anchored, and edges of the first membrane subpart other than the first anchored edge are non-anchored. The second membrane subpart includes a second anchored edge which is fully or partially anchored, and edges of the second membrane subpart other than the second anchored edge are non-anchored.

Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure.