A device for generating a second temperature variation T.sub.2 from a first use temperature variation T.sub.1, includes an elastocaloric material layer, having an internal temperature which is able to vary by T.sub.2 in response to a given mechanical stress variation applied to the elastocaloric material layer. The variation being induced by the first use temperature variation T.sub.1 There is a suspended element in mechanical contact with the elastocaloric material layer so as to apply to this layer a mechanical stress that varies in response to the use temperature variation T.sub.1. The suspended element is arranged so as to make the mechanical stress applied to the elastocaloric material layer vary by in response to the temperature variation T.sub.1, to generate the second temperature variation T.sub.2.

A MEMS metamaterial has a substrate and a suspended structure having an elementary cell which extends at a distance from the substrate along a first direction. The elementary cell has a first structural region having a first material with a first coefficient of thermal expansion. The first structural region has a first side facing the substrate and a second side opposite to the first side. The elementary cell also has a second structural region having a second material different from the first material and with a second coefficient of thermal expansion different from the first coefficient of thermal expansion. The second structural region extends on at least part of the first structural region, on the first side, the second side, or both the first and second side of the first structural region.

A microelectromechanical sensing device includes a substrate, a plurality of support structures and a sensing structure. The sensing structure is supported by the plurality of support structures and is disposed above the substrate. The sensing structure includes a first dielectric layer, an electrode layer, a sensing layer and a second dielectric layer. The first dielectric layer has a dielectric top surface coplanar with the support top surface of each of the support structures. The electrode layer is disposed on the first dielectric layer and directly contacts the plurality of support structures. The sensing layer is disposed on the first dielectric layer and a projection of the sensing layer toward the substrate does not overlap the plurality of support structures. The second dielectric layer is disposed on the electrode layer and the sensing layer, wherein the first dielectric layer and the second dielectric layer are made of the same material.

A sensor unit includes: a substrate; a first sensor module that is disposed at the substrate and that includes a first acceleration sensor; and a second sensor module that is disposed at the substrate and includes a second acceleration sensor, in which the first sensor module and the second sensor module are arranged to be adjacent to each other at one surface side of the substrate, the first acceleration sensor is eccentrically disposed at the second sensor module side in the first sensor module, and the second acceleration sensor is eccentrically disposed at the first sensor module side in the second sensor module.

The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 10.sup.19 cm.sup.3, and preferably between 10.sup.19 cm.sup.3 and 10.sup.21 cm.sup.3.

The present invention discloses an optical MEMS based intracranial pressure (ICP) and intracranial temperature (ICT) monitor, comprising: a broadband light source, a tunable optical filter (TOF), an optical etalon, a plurality of optical receivers, a plurality of optical couplers, and a probe; wherein the probe comprises an ICP sensor and an ICT sensor; ICP is obtained by a depression wavelength of a reflection spectrum of the ICP sensor, the depression wavelength is obtained by comparing with a periodic spectrum with an absolute wavelength mark of an optical etalon; and ICT is obtained by a peak wavelength of a reflection spectrum of the ICT sensor, the peak wavelength is obtained by comparing with a periodic spectrum with an absolute wavelength mark of an optical etalon. The present application can precisely monitor ICP and ICT.

A MEMS speaker suitable for generating audible sound waves, includes a bimetallic strip actuation system extending in a first plane and an amplification capsule including a membrane extending in a second plane, parallel to the first plane, the membrane including a rigid interior zone and a flexible exterior zone, and a rigid coupling wall, fastened at the periphery of the bimetallic strip actuation system to make the exterior zone of the membrane integral with said actuation system.

A method for manufacturing a semiconductor device is provided, including the following steps. A metallized structure is formed on a membrane. A patterned photoresist layer is formed on the metallized structure, and the patterned photoresist layer has an opening. A first etching is performed to remove a portion of the metallization structure located below the opening to a first depth. A second etching is performed to remove the portion of the metallization structure located below the opening to a second depth that is greater than the first depth. A third etching is performed to remove the portion of the metallization structure located under the opening to a third depth that is greater than the second depth. The etchants used in the first and third etchings include chlorine, and the etchants used in the second etchings include chlorine and fluorine.