A tunable photonic device and method of fabricating the same are provided. The tunable photonic device including a substrate and an actuator having a first end supported by the substrate and a second end in spaced relation to the substrate. A photonic structure is operatively connected to the actuator and a stimulus generator configured to selectively generate a stimulus to act on the actuator. The stimulus acting on the actuator causes deformation of the actuator and moves the photonic structure between first and second positions.

A microelectromechanical infrared sensing device is provided, which includes a substrate, a sensing plate, a reflecting plate, a plurality of first supporting elements, a plurality of second supporting elements and a plurality of stoppers. The second supporting elements are connected to the sensing plate, such that the sensing plate is suspended above the substrate. The reflecting plate is disposed between the substrate and the sensing plate. The first supporting elements are connected to the reflecting plate, such that the reflecting plate is suspended between the substrate and the reflecting plate. When the reflecting plate moves toward the substrate and at least one of the stoppers contacts the substrate or the reflecting plate, the distance between the reflecting plate and the sensing plate increases.

A device includes a substrate and a set of force sensors supported by the substrate. Each force sensor includes a pillar extending outward from the substrate, each pillar comprising a stack of semiconductor layers, the stack of semiconductor layers being configured to emit light upon biasing of the stack of semiconductor layers, and post disposed along only a portion of a perimeter of the pillar such that, taken together, the pillar and the post have an asymmetrical cross-sectional shape. Each pillar has a cross-section elongated along an axis. An orientation of the axis, and a peripheral position of the portion of the perimeter at which the post is disposed, differ across the set of force sensors such that a variation in light emitted by the stack of semiconductor layers of one or more of the force sensors is indicative of a direction of a shear force applied to the set of force sensors.

A microrobot is disclosed. The microrobot includes a magnet configured to provide a motive force when magnetic force of one or more electrical coils act upon the magnet, a support member coupled to the magnet, a thermo-responsive polymer member coupled to each end of the support member at a proximal end, the thermo-responsive polymer member configured to articulate when heated, wherein the thermo-responsive polymer members configured to receive light from a microrobot structured light system and convert the received light into heat.

An actuator and a manufacture method thereof, an operation method thereof, and a movable device. The actuator includes a photodeformation layer and a first driving unit, the first driving unit includes at least one first light emitting device, the first light emitting device is connected to a first side of the photodeformation layer, the first light emitting device is capable of emitting first light with a first wavelength to irradiate onto the photodeformation layer, and the photodeformation layer can generate a first deformation under irradiation of the first light.

The present disclosure concerns an emitter package for a photoacoustic sensor, the emitter package comprising a MEMS infrared radiation source for emitting pulsed infrared radiation in a first wavelength range. The MEMS infrared radiation source may be arranged on a substrate. The emitter package may further comprise a rigid wall structure being arranged on the substrate and laterally surrounding a periphery of the MEMS infrared radiation source. The emitter package may further comprise a lid structure being attached to the rigid wall structure, the lid structure comprising a filter structure for filtering the infrared radiation emitted from the MEMS infrared radiation source and for providing a filtered infrared radiation in a reduced second wavelength range.

Spin qubits are situated in mechanical resonators that are acoustically coupled with acoustic waveguides. The acoustic waveguides provide frequency dependent phonon propagation selected so that mechanical resonators adjacent to a selected mechanical resonator are acoustically coupled to the selected mechanical resonator in different acoustic frequency ranges. This configure permits directional transfer of quantum states between spins in spin-mechanical resonator and provides a scalable platform for spin-based quantum computing.

Disclosed herein are MEMS devices and systems and methods of manufacturing or operating the MEMS devices and systems for transmitting and detecting radiation. The devices and methods described herein are applicable to terahertz radiation. In some embodiments, the MEMS devices and systems are used in imaging applications. In some embodiments, a microelectromechanical system comprises a glass substrate configured to pass radiation from a first surface of the glass substrate through a second surface of the glass substrate, the glass substrate comprising TFT circuitry; a lid comprising a surface; spacers separating the lid and glass substrate; a cavity defined by the spacers, surface of the lid, and second surface of the glass substrate; a pixel in the cavity, positioned on the second surface of the glass substrate, electrically coupled to the TFT circuitry, and comprising an absorber to detect the radiation; and a reflector to direct the radiation to the absorbers and positioned on the lid.

Embodiments described herein include systems and techniques for converting (i.e., transducing) a quantum-level (e.g., single photon) signal between the three wave forms (i.e., optical, acoustic, and microwave). A suspended crystalline structure is used at the nanometer scale to accomplish the desired behavior of the system as described in detail herein. Transducers that use a common acoustic intermediary transform optical signals to acoustic signals and vice versa as well as microwave signals to acoustic signals and vice versa. Other embodiments described herein include systems and techniques for storing a qubit in phonon memory having an extended coherence time. A suspended crystalline structure with specific geometric design is used at the nanometer scale to accomplish the desired behavior of the system.

Embodiments described herein include systems and techniques for converting (i.e., transducing) a quantum-level (e.g., single photon) signal between the three wave forms (i.e., optical, acoustic, and microwave). A suspended crystalline structure is used at the nanometer scale to accomplish the desired behavior of the system as described in detail herein. Transducers that use a common acoustic intermediary transform optical signals to acoustic signals and vice versa as well as microwave signals to acoustic signals and vice versa. Other embodiments described herein include systems and techniques for storing a qubit in phonon memory having an extended coherence time. A suspended crystalline structure with specific geometric design is used at the nanometer scale to accomplish the desired behavior of the system.