A thermionic energy converter is provided that includes an anode, a cathode, where the anode is disposed opposite the cathode, and a suspension, where a first end of the suspension is connected to the cathode and a second end of the suspension is connected to the anode, where the suspension moveably supports the cathode above the anode to form a variable gap between the anode and the cathode, where the variable gap is capable of enabling a variable thermionic current between the anode and the cathode, where the thermionic converter is capable of an AC power output.

A method includes supplying a current to at least one conductive path integral with a MEMS device to thereby exert a Lorentz force on the MEMS device in the presence of a magnetic field. The method includes determining the magnetic field based on a control value in a control loop configured to maintain a constrained range of motion of the MEMS device. The control loop may be configured to maintain the MEMS device in a stationary position. The current may have a frequency equal to a resonant frequency of the MEMS device.

A method for manufacturing a MEMS element, including the following: forming a least one stationary weight element and at least one moving weight element in the MEMS element, and positioning at least one fixing element at the stationary weight element and at the moving weight element, the fixing element being formed so as to be able to be severed.

An ion-immobilized metal oxide particle includes a metal oxide particle and an anion that itself includes a) a reactive group that consists of an alkoxysilyl group and b) an anionic group consisting of a carboxylate (COO.sup.) group or a sulfonate (SO.sub.3.sup.) group, the anion being immobilized to the metal oxide particle via a silanol group derived from the reactive group. An elastomer includes the ion-immobilized metal oxide particle, and a transducer includes the elastomer.

A semiconductor die is proposed, wherein the semiconductor die comprises a microelectronic section and a sensor section. The microelectronic section comprises an integrated circuit. The sensor section adjoins an edge of the semiconductor die. A sensor is also proposed, which comprises such a semiconductor die.

A semiconductor die is proposed, wherein the semiconductor die comprises a microelectronic section and a sensor section. The microclectronic section comprises an integrated circuit. The sensor section adjoins an edge of the semiconductor die. A sensor is also proposed, which comprises such a semiconductor die.

The present disclosure is directed to a process for manufacturing a micro-electro-mechanical system (MEMS) device. The process includes, in part, forming a first sacrificial dielectric region on a semiconductor wafer; forming a structural layer of semiconductor material on the first sacrificial dielectric region; forming a plurality of first openings through the structural layer; forming a second sacrificial dielectric region on the structural layer; forming a ceiling layer of semiconductor material on the second sacrificial dielectric region; forming a plurality of second openings through the ceiling layer; forming on the ceiling layer a permeable layer; selectively removing the first and the second sacrificial dielectric regions; and forming on the permeable layer a sealing layer of semiconductor material.