A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO.sub.2-patterned portion, and a second Pt-patterned portion on the second TiO.sub.2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO.sub.2 layer formed on the IMD layer, a first TiO.sub.2-patterned portion and a first Pt-patterned portion.

A MEMS apparatus with heater includes central part, periphery part, gap and first connecting part. Central part includes center of mass, heater and first joint. Heater is disposed inside central part. First joint is located on boundary of central part. Displacement of first joint is produced when central part is heated by heater. Periphery part surrounds central part. Gap surrounds central part, and is located between central part and periphery part. First connecting part connects central part and periphery part along first reference line and includes first inner connecting portion and first outer connecting portion. First inner connecting portion is connected to first joint. First outer connecting portion is connected to periphery part. First reference line passes through first joint, and first reference line is not parallel to line connecting center of mass and first joint.

A microelectromechanical system (MEMS) device is provided that includes a substrate having a dielectric cavity formed therein and a movable electromechanical device suspended in the dielectric cavity. The dielectric cavity includes a substantially planar bottom surface and at least one sidewall surface extending substantially perpendicularly from the bottom surface. The movable electromechanical device is suspended in the dielectric cavity such that the movable electromechanical device is spaced apart from the bottom surface and the at least one sidewall surface of the dielectric cavity. The bottom surface of the cavity and each of the at least one sidewall surface of the cavity meet at a rectilinear corner.

An electronic device includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer coupled to the polycrystalline ceramic core, a conductive layer coupled to the first adhesion layer, a second adhesion layer coupled to the conductive layer, and a barrier layer coupled to the second adhesion layer. The electronic device also includes a buffer layer coupled to the support structure, a contact layer coupled to the buffer layer, and a field-effect transistor (FET) coupled to the contact layer.

This application discloses a MEMS chip structure, including a substrate, a side wall, a dielectric plate, a MEMS micromirror array, and a grid array, where the MEMS micromirror array includes a plurality of grooves and a plurality of MEMS micromirrors. The plurality of MEMS micromirrors are in a one-to-one correspondence with the plurality of grooves. The grid array is located above the MEMS micromirror array, and a lower surface of the grid array is connected to upper surfaces of side walls of at least some of the plurality of grooves.

An angular rate sensor includes an annular resonator. The resonator includes an annular base material made of a first material, and an annular first low thermal conductor made of a second material having a lower thermal conductivity than the first material, the first low thermal conductor being sandwiched between an annular first region and an annular second region on an inner side of the first region in the base material over substantially an entire circumference of the resonator.

A microelectromechanical system (MEMS) device is provided that includes a substrate having a dielectric cavity formed therein and a movable electromechanical device suspended in the dielectric cavity. The dielectric cavity includes a substantially planar bottom surface and at least one sidewall surface extending substantially perpendicularly from the bottom surface. The movable electromechanical device is suspended in the dielectric cavity such that the movable electromechanical device is spaced apart from the bottom surface and the at least one sidewall surface of the dielectric cavity. The bottom surface of the cavity and each of the at least one sidewall surface of the cavity meet at a rectilinear corner.

A thermal conducting sheet, including: a binder resin; insulating-coated carbon fibers; and a thermal conducting filler other than the insulating-coated carbon fibers, wherein a mass ratio (insulating-coated carbon fibers/binder resin) of the insulating-coated carbon fibers to the binder resin is less than 1.30, and wherein the insulating-coated carbon fibers include carbon fibers and a coating film over at least a part of a surface of the carbon fibers, the coating film being formed of a cured product of a polymerizable material.

An electronic device includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer coupled to the polycrystalline ceramic core, a conductive layer coupled to the first adhesion layer, a second adhesion layer coupled to the conductive layer, and a barrier layer coupled to the second adhesion layer. The electronic device also includes a buffer layer coupled to the support structure, a contact layer coupled to the buffer layer, and a field-effect transistor (FET) coupled to the contact layer.

A thermal conducting sheet, including: a binder resin; insulating-coated carbon fibers; and a thermal conducting filler other than the insulating-coated carbon fibers, wherein a mass ratio (insulating-coated carbon fibers/binder resin) of the insulating-coated carbon fibers to the binder resin is less than 1.30, and wherein the insulating-coated carbon fibers include carbon fibers and a coating film over at least a part of a surface of the carbon fibers, the coating film being formed of a cured product of a polymerizable material.