In some embodiments, the present disclosure relates to a microelectromechanical system (MEMS) comb actuator including a comb structure. The comb structure includes a support layer having a first material and a plurality of protrusions extending away from a first surface of the support layer in a first direction. The plurality of protrusions are also made of the first material. The plurality of protrusions are separated along a second direction parallel to the first surface of the support layer. The MEMS comb actuator may further include a dielectric liner structure that continuously and completely covers the first surface of the support layer and outer surfaces of the plurality of protrusions. The dielectric liner structure includes a connective portion that continuously connects topmost surfaces of at least two of the plurality of protrusions.

Microelectromechanical systems (MEMS) electret acoustic sensors or microphones, devices, systems, and methods are described. Exemplary embodiments employ electret comprising an inorganic dielectric material such as silicon nitride in MEMS electret acoustic sensors or microphones. Provided implementations include variations in electret acoustic sensor or microphone configuration and recharging of the electret.

A microelectromechanical system includes a lower membrane including a plurality of troughs and crests arranged alternately, an upper membrane including a plurality of troughs and crests arranged alternately, and a spacer layer disposed between the lower membrane and the upper membrane. The spacer layer includes counter electrode walls and support walls made of nitride, the counter electrode walls being provided with conductive elements. Chambers are formed between the troughs of the lower membrane and the crest of the upper membrane and the counter electrode walls are suspended in the chambers respectively. The support walls are sandwiched between the crests of the lower membrane and the troughs of the upper membrane with a space formed between adjacent support walls. The spaces between adjacent support walls may be empty or filled with oxide. Unwanted capacitance between the upper and lower membranes is reduced significantly.

Measures for reducing parasitic capacitances in the layer structure of capacitive MEMS sensor elements, in which parasitic capacitances between bond pads for electrically contacting measuring capacitor electrodes and an electrically conductive layer lying underneath are reduced by these measures. The sensor structure having the measuring capacitor electrodes and bond pads of such MEMS components are in a layer structure on a semiconductor substrate. The carrier layer directly underneath the bond pad structure is uninterrupted in the bond pad region, and the layer structure includes at least one insulation layer by which at least one of the bond pads is electrically insulated from an electrically conductive layer lying underneath. At least one layer under the carrier layer is structured in the region of this bond pad, so that hollow spaces are situated in the layer structure underneath this bond pad, by which the parasitic capacitance between this bond pad and the conductive layer lying underneath is reduced. Alternatively/additionally, the material of the conductive layer in the region underneath this bond pad is replaced by electrically conductive material at least in the upper layer region, so that the insulation layer in the region of this bond pad is considerably thicker than outside the bond pad region.

A CMOS-MEMS resonant transducer and a method for fabricating the same are disclosed, which provide the CMOS-MEMS resonant transducer having narrow gaps(<500 nm) with high yield by etching a well-defined free-free beam structure, furthermore, the TiN layers disposed at the bottom of the resonant body may efficiently reduce the frequency drift due to electrostatic charges. The method for fabricating the CMOS-MEMS resonant transducer is also adapted to the processes of CMOS-MEMS platform with various scales, which provides routing and MEMS design flexibility.

A MEMS device includes a dual membrane, an electrode, and an interconnecting structure. The dual membrane has a top membrane and a bottom membrane. The bottom membrane is positioned between the top membrane and the electrode and the interconnecting structure defines a spacing between the top membrane and the bottom membrane.

A micromechanical sensor device with a movable gate includes a field effect transistor having a drain region, a source region, a channel region arranged between the field effect transistor and the source region and including a first doping type, and a movable gate. The movable gate is separated from the channel region by an interspace. The drain region, the source region, and the channel region are arranged in a substrate. An oxide region is provided in the substrate at least at longitudinal sides of the channel region.

In accordance with an embodiment, a MEMS device includes a first membrane element, a second membrane element spaced apart from the first membrane element, a low pressure region between the first and second membrane elements, the low pressure region having a pressure less than an ambient pressure, and a counter electrode structure comprising a conductive layer, which is at least partially arranged in the low pressure region or extends in the low pressure region. The conductive layer includes a segmentation providing an electrical isolation between a first portion of the conductive layer and a second portion of the conductive layer.

According to one embodiment, a MEMS element includes a first member, and an element part. The element part includes a first fixed electrode fixed to the first member, and a first movable electrode facing the first fixed electrode, a first conductive member electrically connected with the first movable electrode, and a second conductive member electrically connected with the first movable electrode. The first movable electrode is supported by the first and second conductive members to be separated from the first fixed electrode in a first state before a first electrical signal is applied between the second conductive member and the first fixed electrode. The first conductive member is separated from the first movable electrode in a second state after the first electrical signal is applied. The first movable electrode is supported by the second conductive member to be separated from the first fixed electrode in the second state.

The present invention discloses a system for protecting a MEMS product from an ESD event, including, a control circuit; a MEMS product, electrically connected with the control circuit; an ESD protection device, electrically connected with the control circuit, and electrically connected with the MEMS product in parallel; wherein, the ESD protection device comprises: a top electrode assembly electrically connected with the control circuit; a flexible beam comprising a first electrode layer electrically connected with the control circuit, a second electrode layer electrically connected with the MEMS product, and a moving metal contact electrically connected with the second electrode layer; a bottom electrode assembly having a bottom electrode layer electrically connected with the MEMS product and a fixed metal contact electrically connected with the bottom electrode layer and facing the moving metal contact.