According to various embodiments, a PMUT device may include a wafer, an active layer including a piezoelectric stack, an intermediate layer having a cavity therein where the intermediate layer is disposed between the wafer and the active layer such that the cavity is adjoining the piezoelectric stack. A via may be formed through the active layer and the intermediate layer to the wafer. A metallic layer may be disposed over the active layer and over surfaces of the via. The intermediate layer may include an interposing material surrounding the cavity, and may further include a sacrificial material surrounding the via. The sacrificial material may be different from the interposing material. The metallic layer may include a first member at least substantially overlapping the piezoelectric stack, a second member extending from the first member to the cavity, and a third member extending into the active layer to contact an electrode therein.

A MEMS includes, in part, a parallel plate capacitor, a proofmass adapted to be displaced by a first distance from a rest state in response to a first voltage applied to the capacitor, and a piezoelectric material adapted to generate a second voltage in response to an external force applied to the MEMS. The second voltage causes the MEMS to transition from a standby mode to an active mode of operation. The proofmass is displaced by a second distance in response to the external force thereby causing the piezoelectric material to generate the second voltage. A spring couples the proofmass to the piezoelectric material, and a transistor turns on in response to the second voltage thereby causing the MEMS to transition to the active mode of operation. The proofmass returns to the rest state when the MEMS is in the active mode of operation.

A micromechanical component for a sensor or microphone device. An electrode surface of a first electrode structure is aligned with a second electrode structure. A substructure of the first electrode structure is entirely made of at least one electrically conductive material. The electrode surface and an opposite surface of the first electrode structure are outer surfaces of the substructure. A stop structure protruding from the electrode surface towards the second electrode structure is formed on the first electrode structure. The first electrode structure includes an insulating region which extends from the electrode surface to the opposite surface of the first electrode structure. The stop structure is formed either as a projection of the at least one insulating region protruding from the electrode surface towards the second electrode structure or is bordered by the at least one insulating region.

A vibratory gyro element 100 includes a fixed part 10, a resonator 20 having a cos Nθ (N is a natural number of two or more) mode of vibration, support parts 30, and electrodes 40. The electrodes 40 are arranged in 4N orientations arranged in an outer circumferential direction of the resonator 20. The electrodes 40 include a primary driving electrode PD, a primary pickoff electrode PPO, a secondary pickoff electrode SPO, and a secondary driving electrode SD. The primary pickoff electrode PPO is arranged in the same orientation as that of the primary driving electrode PD, and the secondary driving electrode SD is arranged in the same orientation as that of the secondary pickoff electrode SPO.

A method of forming a MEMS device includes providing a substrate having a device stopper. The device stopper is integral to the substrate and formed of the substrate material. A thermal dielectric isolation layer may be arranged over the device stopper and the substrate. A device cavity may be formed in the substrate and the thermal dielectric isolation layer. The thermal dielectric isolation layer and the device stopper at least partially surround the device cavity. An active device layer may be formed over the thermal dielectric isolation layer and the device cavity.

A microelectromechanical systems (MEMS) device comprises a MEMS die that comprises first and second diaphragms, a first plurality of electrodes each disposed on the first diaphragm, and a second plurality of electrodes each disposed on the second diaphragm. A fixed dielectric element is disposed between the first and second diaphragms and includes a plurality of apertures. The MEMS die further comprises a third plurality of electrodes, wherein each of the third plurality comprises a first conductive layer disposed on the first diaphragm proximate to at least one of the first plurality and a second conductive layer disposed on the second diaphragm proximate to at least one of the second plurality, and a conductive pin that extends through an aperture of the plurality of apertures and electrically connects the first conductive layer to the second conductive layer.

Provided are an electromechanical transducer including a light movable member that is easy to move and charged portions whose amount of electrostatic charge does not substantially change over time and a method for manufacturing such an electromechanical transducer. The electromechanical transducer using electrostatic interaction between a charged portion and a counter electrode to perform transduction between electric power and motive power includes a fixed substrate, a movable member being movable with a predetermined distance maintained between the fixed substrate and the movable member, the movable member having grooves in a surface facing the fixed substrate, the grooves being formed at intervals in a moving direction of the movable member, charged portions formed on the surface of the movable member so as to alternate with the grooves; counter electrodes disposed on a surface of the fixed substrate in the moving direction, the surface facing the movable member, and a cover layer containing copper and covering at least side walls of the movable member inside the grooves.

Exemplary embodiment of a tilting z-axis, out-of-plane sensing MEMS accelerometers and associated structures and configurations are described. Disclosed embodiments facilitate improved offset stabilization. Non-limiting embodiments provide exemplary MEMS structures and apparatuses characterized by one or more of having a sensing MEMS structure that is symmetric about the axis orthogonal to the springs or flexible coupling axis, a spring or flexible coupling axis that is aligned to one of the symmetry axes of the electrodes pattern, a different number of reference electrodes and sense electrodes, a reference MEMS structure having at least two symmetry axes, one which is along the axis of the springs or flexible coupling, and/or a reference structure below the spring or flexible coupling axis.

A transduction detection device includes a substrate and a strain gauge suspended above a face of the substrate having a piezoresistive element. At least one portion of the surface of the piezoresistive element is covered by a stack having, successively from the surface of the piezoresistive element, a dielectric layer and an electrically conductive layer.

In described examples, a microelectromechanical system (MEMS) is located on a substrate. A silicon nitride (SiN) layer on a portion of the substrate. A mechanical structure has first and second ends. The first end is embedded in the SiN layer, and the second end is cantilevered from the SiN layer.