A magnetic device may include a magnetic structure, a device structure, and an associated circuit. The magnetic structure may include a patterned layer of material having a predetermined magnetic property. The patterned layer may be configured to, e.g., provide a magnetic field, sense a magnetic field, channel or concentrate magnetic flux, shield a component from a magnetic field, or provide magnetically actuated motion, etc. The device structure may be another structure of the device that is physically connected to or arranged relative to the magnetic structure to, e.g., structurally support, enable operation of, or otherwise incorporate the magnetic structure into the magnetic device, etc. The associated circuit may be electrically connected to the magnetic structure to receive, provide, condition or process of signals of the magnetic device.

A magnetic device may include a magnetic structure, a device structure, and an associated circuit. The magnetic structure may include a patterned layer of material having a predetermined magnetic property. The patterned layer may be configured to, e.g., provide a magnetic field, sense a magnetic field, channel or concentrate magnetic flux, shield a component from a magnetic field, or provide magnetically actuated motion, etc. The device structure may be another structure of the device that is physically connected to or arranged relative to the magnetic structure to, e.g., structurally support, enable operation of, or otherwise incorporate the magnetic structure into the magnetic device, etc. The associated circuit may be electrically connected to the magnetic structure to receive, provide, condition or process of signals of the magnetic device.

A magnetic device may include a magnetic structure, a device structure, and an associated circuit. The magnetic structure may include a patterned layer of material having a predetermined magnetic property. The patterned layer may be configured to, e.g., provide a magnetic field, sense a magnetic field, channel or concentrate magnetic flux, shield a component from a magnetic field, or provide magnetically actuated motion, etc. The device structure may be another structure of the device that is physically connected to or arranged relative to the magnetic structure to, e.g., structurally support, enable operation of, or otherwise incorporate the magnetic structure into the magnetic device, etc. The associated circuit may be electrically connected to the magnetic structure to receive, provide, condition or process of signals of the magnetic device.

Nano-electromechanical systems (NEMS) devices that utilize thin electrically conductive membranes, which can be, for example, graphene membranes. The membrane-based NEMS devices can be used as sensors, electrical relays, adjustable angle mirror devices, variable impedance devices, and devices performing other functions. The NEMS devices have a serpentine shape arrangement of the electrically conductive membrane. The electrically conductive membrane can be controllably wicked down on the edge of the oxide cavity to increase sensitivity of the NEMS device.

A motor-actuator device using a PDL trap system is provided. In one aspect, a motor-actuator device includes: a PDL trap having a pair of diametric magnets, and a levitated diamagnetic rotor in between the diametric magnets, wherein at least a portion of the diamagnetic rotor has a rectangular shape; and an electrode shell having at least one pair of semicircular electrodes which surround, but are in a non-contact position with the levitated diamagnetic rotor and each other. A system including the motor-actuator device and an electrode driver circuit is also provided, as is a method of operating the motor-actuator device.

According to one embodiment, a sensor includes a film portion, and a first sensor portion. The film portion includes a first film including a plurality of holes. The film portion is deformable. The first sensor portion is fixed to a portion of the film portion. The first sensor portion includes a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first film and the first magnetic layer. The first intermediate layer is provided between the first magnetic layer and the second magnetic layer. A direction from at least a portion of the plurality of holes toward the first sensor portion is aligned with a first direction. The first direction is from the first film toward the first sensor portion.

A MEMS sensor device includes an electrically conductive membrane and an electrically conductive closed loop structure. The closed loop structure is arranged in proximity to the membrane and is configured to reduce eddy currents in the membrane.

A texture inducing structure for alloy films is provided. The texture inducing structure includes a substrate, a texture-inducing layer and a deposition layer. The texture-inducing layer is formed on the substrate. The texture-inducing layer has an intrinsically strong crystalline texture, a texture coefficient of the texture-inducing layer is greater than 2, and a thickness of the texture-inducing layer is ranged from 0.1 m to 6 m. The deposition layer is formed on the texture-inducing layer. A texture of the deposition layer is induced by the texture-inducing layer thereby changing the magnetic anisotropy and the magnetic strength of the deposition layer, a thickness of the deposition layer is ranged from 1 m60 m, and the thickness of the deposition layer is greater than that of the texture-inducing layer.

A magnetic device may include a magnetic structure, a device structure, and an associated circuit. The magnetic structure may include a patterned layer of material having a predetermined magnetic property. The patterned layer may be configured to, e.g., provide a magnetic field, sense a magnetic field, channel or concentrate magnetic flux, shield a component from a magnetic field, or provide magnetically actuated motion, etc. The device structure may be another structure of the device that is physically connected to or arranged relative to the magnetic structure to, e.g., structurally support, enable operation of, or otherwise incorporate the magnetic structure into the magnetic device, etc. The associated circuit may be electrically connected to the magnetic structure to receive, provide, condition or process of signals of the magnetic device.

The problem of the invention is to provide a magnetic thin film having a high magnetic anisotropy constant Ku and a high coercive force Hc, and to provide an application device comprising the above magnetic thin film. The magnetic thin film of the present invention includes an ordered alloy including: at least one first element selected from the group consisting of Fe and Ni; at least one second element selected from the group consisting of Pt, Pd, Au and Ir; and Sc.