A MEMS chip (100) includes a silicon substrate layer (110), a first oxidation layer (120) and a first thin film layer (130). The silicon substrate layer includes a front surface (112) for a MEMS process and a rear surface (114), both the front surface and the rear surface being polished surfaces. The first oxidation layer is mainly made of silicon dioxide and is formed on the rear surface of the silicon substrate layer. The first thin film layer is mainly made of silicon nitride and is formed on the surface of the first oxidation layer. In the above MEMS chip, by sequentially laminating a first oxidation layer and a first thin film layer on the rear surface of a silicon substrate layer, the rear surface is effectively protected to prevent the scratch damage in the course of a MEMS process. A manufacturing method for the MEMS chip is also provided.

A waterproof structure includes a housing, an electroacoustic transducer, a packing and an annular member. The electroacoustic transducer has a case formed with tone holes. The packing is interposed between the housing and the electroacoustic transducer and has a thin film part on a part opposed to the tone holes. The annular member is interposed between the thin film part and the case and surrounds the tone holes. A space surrounded by the thin film part, the annular member and the case is formed. The annular member is configured to bias the thin film part of the packing.

A construction component for detecting the application of energy and responding to the energy input wherein a plurality of particles are distributed throughout the component with each particle being configured to sense component state information. The component includes at least one processor configured to receive sensing information from the plurality of particle sensors. The processor configured to receive component state information and to process the information to determine a response to selectively alter attributes of the construction component to affect the behavior of the component. The plurality of particles capable of converting a portion of the energy applied to the construction component into an alternative form of energy, wherein the converted energy is harvested for utilization elsewhere.

Provided are sensor elements and a method of manufacturing the same. The sensor element includes a die, an active part including a frame surrounded by the die, a first trench disposed between the die and the active part, and a bridge connecting the die and the frame and a second trench being formed in the bridge, whereby electrical connection from the active part to an electrode pad may be secured and transfer of external stress to the active part may be significantly reduced through the second trench.

An apparatus for stress-reduced mounting of MEMS-based micromirrors on a metallic support structure comprises a plate extending in a main plane of extent and a plurality of compensation elements which are connected to the plate and have connecting elements which extend across the main plane of extent and a plurality of base elements. A respective group with a plurality of connecting elements is connected to a common base element. The apparatus is produced using MEMS technology.

A device includes a first substrate. The device also includes a barrier structure including a metallic layer on the first substrate, where the barrier structure forms a cavity. The device also includes a second substrate on the metallic layer, where the metallic layer extends between the first substrate and the second substrate, and where the metallic layer includes a sloped edge that contacts the first substrate within the cavity.

A semiconductor pressure sensor includes: a first silicon substrate including a first recessed part; and a second silicon substrate including a diaphragm covering a first space in the first recessed part, the second silicon substrate being configured to hermetically seal the first space. In cross-section, a plurality of second spaces are hermetically sealed in a state of being separated away from the first space between the first silicon substrate and the second silicon substrate, and are provided in one of or each of a first end side and a second end side of the first space.