A semiconductor device having a lid, and method of making a semiconductor device having a lid is disclosed. The semiconductor device includes a substrate. A device is positioned at the substrate. A lid made of a semiconductor material is positioned over the device to form a protective cavity about the device. The lid is formed using a semiconductor process. In other examples, the lid may be made of a nonconductive material, such as a polymer material. The lids may be formed as part of a batch process.

A device for suppressing stray radiation includes a MEMS sensor module and a conductive cage structure. The conductive cage structure may enclose the MEMS sensor module in order to suppress penetration of stray electromagnetic radiation with a stray wavelength .sub.o into the conductive cage structure, and the conductive cage structure may be arranged to be thermally insulated from the MEMS sensor module. The device may also include a connecting line. The connecting line may be connected to the MEMS sensor module and fed through the conductive cage structure by a capacitive element.

A microelectromechanical sensors (MEMS) device includes a first substrate, a MEMS transducer package attached on the first substrate and including a MEMS transducer therein configured to output an electrical signal corresponding to movement of fluid, and a semiconductor device attached on the first substrate and configured to process the electrical signal provided from the MEMS transducer.

A MEMS assembly includes a package, wherein the package includes a substrate and a cover element, wherein a through opening is provided in the cover element, a MEMS component within the package on the cover element, an integrated circuit arrangement within the package on the substrate, and a support component within the package on the substrate, wherein the support component on the substrate is electrically coupled, by first electrical connection lines, to the MEMS component on the cover element and is electrically coupled, by second electrical connection lines, to the circuit arrangement on the substrate in order to produce an electrical connection between the MEMS component and the integrated circuit arrangement.

Embodiments of the application provide a MEMS chip and an electrical packaging method for a MEMS chip. The MEMS chip includes a MEMS device layer, a first isolating layer located under the MEMS device layer, and a first conducting layer located under the first isolating layer. At the first isolating layer, there are a corresponding quantity of first conductive through holes in locations corresponding to conductive structures in a first region and in locations corresponding to electrodes in a second region. At the first conducting layer, there are M electrodes spaced apart from one another, and the M electrodes are respectively connected to M of the first conductive through holes. At the first conducting layer, electrodes in locations corresponding to at least some of the conductive structures in the first region are electrically connected in a one-to-one correspondence to electrodes in locations corresponding to at least some of the electrodes in the second region.

An embodiment device includes a body structure having an interior cavity, a control chip disposed on a first interior surface of the interior cavity, and a sensor attached, at a first side, to a second interior surface of the interior cavity opposite the first interior surface. The sensor has a mounting pad on a second side of the sensor that faces the first interior surface, and the sensor is vertically spaced apart from the control chip by an air gap, with the sensor is aligned at least partially over the control chip. The device further includes an interconnect having a first end mounted on the mounting pad, the interconnect extending through the interior cavity toward the first interior surface, and the control chip is in electrical communication with the sensor by way of the interconnect.

A sensor device including a leadframe is disclosed. A sensor chip is arranged on the leadframe, an encapsulation material is arranged on a main surface and a side surface of the sensor chip, and a signal port arranged at a side surface of the sensor device. The side surface of the sensor device extends between opposing main surfaces of the sensor device, wherein one of the main surfaces is a mounting surface of the sensor device. A channel extends from the signal port to a sensing structure of the sensor chip.

The present invention discloses an MEMS pressure sensing element, including a substrate provided with a groove; a pressure-sensitive film disposed above the substrate, the pressure-sensitive film sealing an opening of the groove to form a sealed cavity; and a movable electrode plate and a fixed electrode plate which are located in the sealed cavity and form a capacitor structure, wherein the fixed electrode plate is fixed on a bottom wall of the groove of the substrate, and the movable electrode plate is suspended above the fixed electrode plate and opposite to the fixed electrode plate; and the pressure-sensitive film is connected to the movable electrode plate so as to drive the movable electrode plate to move under the action of an external pressure. According to the MEMS pressure sensing element, pressure sensitivity and electrical detection are separated, the pressure-sensitive film is exposed in air, the capacitor structures are disposed in the sealed cavity defined by the pressure-sensitive film and the substrate, and the movable electrode plates of the capacitor structures can be driven by the pressure-sensitive film. In this way, not only is a pressure-sensitive function finished, but also external electromagnetic interferences on the capacitor structures are shielded.

A filter includes a multilayer structure comprising films and forming bulk acoustic wave resonators, a cap accommodating the bulk acoustic wave resonators and bonded to the multilayer structure, a bonding agent disposed in a bonded area between the multilayer structure and the cap and comprising a bonding layer, and a shielding layer disposed on an inner surface of the cap and comprising a same material as at least a portion of the bonding layer.

An apparatus includes a MEMS wafer with a device layer and a handle substrate bonded to the device layer. The apparatus also includes a CMOS wafer including an oxide layer, and a passivation layer overlying the oxide layer. A bonding electrode overlies the passivation layer and a bump stop electrode overlies the passivation layer. A eutectic bond is between a first bonding metal on the bonding electrode and a second bonding metal on the MEMS wafer. A sensing electrode is positioned adjacent to the bump stop electrode and the bonding electrode. A sensing gap is positioned between the sensing electrode and the device layer, wherein the sensing gap is greater than a bump stop gap positioned between the bump stop electrode and the device layer.