The MEMS device has: a sensor body having a functional structure configured to transduce a physical or chemical quantity into a corresponding electrical quantity; and a cap bonded to the sensor body and having a first cavity overlying the functional structure. The cap has a supporting portion and a cover portion that form the first cavity. The supporting portion is bonded to the sensor body. The cover portion is bonded to the supporting portion and has an inner wall delimiting on a side the first cavity and facing the functional structure. The MEMS device further has a first coating that extends within the first cavity on the inner wall of the cover portion.

An optoelectronic module includes an optical filter and can have a relatively small overall height. The module includes a semiconductor die for the optical filter, where the die has a cavity in its underside. The cavity provides space to accommodate an optoelectronic device such as a light sensor or light emitter. Such an arrangement can reduce the overall height of the module, thereby facilitating its integration into a host device in which space is at a premium.

A semiconductor device includes a first substrate, a second substrate bonded to the first substrate from a first surface of the second substrate, a third substrate bonded to the second substrate from a second surface of the second substrate, a cavity defined by the first substrate, the second substrate and the third substrate; and a viewer window provided in the third substrate and aligned with the cavity; wherein the inside of the cavity is observed through the viewer window.

A microelectromechanical systems (MEMS) package assembly and a method of manufacturing the same is provided. The MEMS package assembly includes a substrate, a housing coupled to the substrate to form a cavity, wherein the housing includes a transparent plate disposed above and parallel to the substrate and is configured to permit a transmission of light therethrough, and a MEMS chip disposed within the cavity and including a first main surface proximal to the transparent plate and a second main surface opposite to the first main surface and coupled to the substrate. The MEMS chip is oriented such that the first main surface is tilted at a tilt angle with respect to the transparent plate.

A package-level, integrated high-vacuum ion-chip enclosure having improved thermal characteristics is disclosed. Enclosures in accordance with the present invention include first and second chambers that are located on opposite sides of a chip carrier, where the chambers are fluidically coupled via a conduit through the chip carrier. The ion trap is located in the first chamber and disposed on the chip carrier. A source for generating an atomic flux is located in the second chamber. The separation of the source and ion trap in different chambers affords thermal isolation between them, while the conduit between the chambers enables the ion trap to receive the atomic flux.

A wearable device includes a case and a far infrared temperature sensing device. The case has a first opening. The far infrared temperature sensing device is disposed inside the case of the wearable device. The far infrared temperature sensing device includes an assembly structure, a sensor chip, a filter structure, and a metal shielding structure. The assembly structure has an accommodating space and a top opening. The sensor chip is disposed in the accommodating space of the assembly structure. The filter structure is disposed above the sensor chip. The metal shielding structure is disposed above the sensor chip, and has a second opening to expose the filter structure. The first and second openings are communicated to cooperatively define a through hole.

In an electro-optical device, a light-transmitting cover is disposed in mirrors, and when light is applied toward the mirrors through the light-transmitting cover, the temperature of the light-transmitting cover tires to increase due to the applied light. Here, in the electro-optical device, first metal portions that are in contact with the light-transmitting cover and the element substrate are formed. For this reason, it is possible to release the heat of the light-transmitting cover to a substrate through the first metal portions and the element substrate.

A package includes a support structure having an electrically insulating material, a microelectromechanical system (MEMS) component, a cover structure having an electrically insulating material and mounted on the support structure for at least partially covering the MEMS component, and an electronic component embedded in one of the support structure and the cover structure. At least one of the support structure and the cover structure has or provides an electrically conductive contact structure.

A package for a MEMS device and a method for packaging a MEMS device are disclosed. The package includes a first die and a second die. The first die has a first central area and a first peripheral area surrounding the first central area, and the second die has a second central area and a second peripheral area surrounding the second central area. A first bond in the first peripheral area is bonded to a second bond in the second peripheral area so that a closed space is defined between the first central area and the second central area. Such a MEMS device package is airtight, and the second die can be easily fabricated without additional processing. Therefore, the MEMS device package disclosed in the present invention has good airtight performance and can be fabricated easily at low cost.

An optical electronics device includes first, second and third wafers. The first wafer has a semiconductor substrate with a dielectric layer on a side of the semiconductor substrate. The second wafer has a transparent substrate with an anti-reflective coating on a side of the transparent substrate. The first wafer is bonded to the second wafer at a silicon dioxide layer between the semiconductor substrate and the anti-reflective coating. The first and second wafers include a cavity extending from the dielectric layer through the semiconductor substrate and through the silicon dioxide layer to the anti-reflective coating. The third wafer includes micromechanical elements. The third wafer is bonded to the dielectric layer, and the micromechanical elements are contained within the cavity.