A MEMS pressure sensor includes a monolithic body of semiconductor material having a first face and a second face and housing a first buried cavity and a second buried cavity, arranged under the first buried cavity and projecting laterally therefrom. A first sensitive region is formed between the first buried cavity and the first face at a first depth, and a second sensitive region is formed between the second buried cavity and the first face at a second depth greater than the first depth. The monolithic body also houses a first piezoresistive sensing element and a second piezoresistive sensing element, integrated in the first and second sensitive regions, respectively.

A wafer level package comprises a functional wafer with a first surface, device structures connected to device pads arranged on the first surface. A cap wafer, having an inner and an outer surface, is bonded with the inner surface to the first surface of the functional wafer. A frame structure surrounding the device structures is arranged between functional wafer and cap wafer. Connection posts are connecting the device pads on the first surface to inner cap pads on the inner surface. Electrically conducting vias are guided through the cap wafer connecting inner cap pads on the inner surface and package pads on the outer surface of the cap wafer.

Embodiments include circuitry and circuit elements such as contact arrays for harvesting power and soft connectors and patches for connecting flexible and stretchable soft circuits.

An analysis method of a device through a MEMS sensor is provided in which the MEMS sensor includes a control unit and a sensing assembly coupled to the device. The analysis method includes acquiring, through the sensing assembly, first data indicative of an operative state of the device. Testing is performed for the presence of a first abnormal operating condition of the device. If the first abnormal operating condition of the device is confirmed, a self-test of the sensing assembly is performed to generate a quantity indicative of an operative state of the sensing assembly. The self-test includes acquiring, through the sensing assembly, second data indicative of the operative state of the sensing assembly, generating a signature according to the second data, and processing the signature through deep learning techniques to generate said quantity.

A semiconductor package including a semiconductor die and at least one bondline positioned on the semiconductor die, the at least one bondline comprising a nickel lanthanide alloy diffusion barrier layer abutting a gold layer.

The present disclosure relates to a wafer-level fan-out package that includes a first thinned die, a second die, a multilayer redistribution structure underneath the first thinned die and the second die, a first mold compound over the second die, a second mold compound over the multilayer redistribution structure, and around the first thinned die and the second die, and a third mold compound. The second mold compound extends beyond the first thinned die to define an opening within the second mold compound and over the first thinned die, such that a top surface of the first thinned die is at a bottom of the opening. A top surface of the first mold compound and a top surface of the second mold compound are coplanar. The third mold compound fills the opening and is in contact with the top surface of the first thinned die.

Embodiments may relate to a microelectronic package that includes an overmold material, a redistribution layer (RDL) in the overmold material, and a die in the overmold material electrically coupled with the RDL on an active side of the die. The RDL is configured to provide electrical interconnection within the overmold material and includes at least one mold interconnect. The microelectronic package may also include a through-mold via (TMV) disposed in the overmold material and electrically coupled to the RDL by the mold interconnect. In some embodiments, the microelectronics package further includes a surface mount device (SMD) in the overmold material. The microelectronics package may also include a substrate having a face on which the overmold is disposed.

In described examples, a first device on a first surface of a substrate is coupled to a structure arranged on a second surface of the substrate. In at least one example, a first conductor arranged on the first surface is coupled to circuitry of the first device. An elevated portion of the first conductor is supported by disposing an encapsulate and curing the encapsulate. The first conductor is severed by cutting the encapsulate and the first conductor. A second conductor is coupled to the first conductor. The second conductor is coupled to the structure arranged on the second surface of the substrate.

A MEMS transducing apparatus includes a substrate, a conductive pad, a stacked structure of a transducing device, a first polymer layer, a second polymer layer and a third polymer layer. An upper cavity is formed through the substrate. The conductive pad is formed on a first surface of the substrate to cover a first opening of the upper cavity. The stacked structure of the transducing device is formed on the conductive pad. The first polymer layer is formed on the first surface of the substrate. A lower cavity is formed through the first polymer layer. The stacked structure of the transducing device is exposed within the lower cavity. The third polymer layer is formed on a second surface of the substrate to cover a second opening of the upper cavity. The second polymer layer is formed on the first polymer layer to cover a third opening of the lower cavity.

A sensor package comprises a MEMS sensor chip, a cover arranged over a first main surface of the MEMS sensor chip, said cover being fabricated from a mold compound, and an electrical through contact extending through the cover and to electrically couple the sensor package to a circuit board arranged over the cover.