Patent classifications
B81B7/007
Sacrificial redistribution layer in microelectronic assemblies having direct bonding
Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component having a first direct bonding region, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component having a second direct bonding region and coupled to the first microelectronic component by the first and second direct bonding regions, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, and wherein individual first metal contacts in the first direct bonding region are coupled to respective individual second metal contacts in the second direct bonding region; and a void between an individual first metal contact and a respective individual second metal contact.
SENSOR SEMICONDUCTOR PACKAGE, ARTICLE COMPRISING THE SAME AND MANUFACTURING METHOD THEREOF
The sensor semiconductor package (100) comprises a die pad (101), external connection terminals (103), semiconductor chip 105 and sealing member. The semiconductor chip (105) is located on a top surface of the die pad (101) and is electrically connected with the external connection terminals (103) and the die pad (101). The sealing member covers the die pad (101), the external connection terminals (103) and the semiconductor chip (105) and exposes an outer terminal (115) of each of the external connection terminals (103) and an outer contact surface (117) of the die pad (101). The outer contact surface (117) of the die pad (101) forms an electrode (117) of the sensor semiconductor package (100). The article comprises the sensor semiconductor package (100). The method manufactures the sensor semiconductor package (100) and the article.
MICROMECHANICAL DEVICE WITH CONTACT PAD
A micromechanical device that includes a MEMS substrate and a cap substrate that enclose at least one first cavity, with at least one contact pad that is situated outside the first cavity. A MEMS structure is situated in the first cavity and connected to the contact pad with the aid of a strip conductor, the strip conductor extending at least partially in the MEMS substrate. The contact pad is situated at a surface of the cap substrate.
MEMS ELECTRICAL AND PHYSICAL CONNECTION VIA SOLDER COUPLINGS
A MEMS device, comprising a plurality of stacked layers, includes a plurality of solder couplings that mechanically fasten and electrically couple the MEMS device to an external component. The plurality of solder couplings is connected atop a portion of an upper surface that extends past an edge surface of a MEMS layer to form a shelf and are electrically connected via the shelf to receive signals generated by the MEMS device. These signals are provided to the external component via the solder couplings.
METHODS AND DEVICES FOR MICROELECTROMECHANICAL RESONATORS
MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.
PACKAGING STRUCTURES AND PACKAGING METHODS FOR ULTRASOUND-ON-CHIP DEVICES
A method of manufacturing an ultrasound imaging device involves forming an interposer structure, including forming a first metal material within openings through a substate and on top and bottom surfaces of the substrate, patterning the first metal material, forming a dielectric layer over the patterned first metal material, forming openings within the dielectric layer to expose portions of the patterned first metal material, filling the openings with a second metal material, forming a third metal material on the top and bottom surfaces of the substrate, and patterning the third metal material. The method further involves forming a packaging structure for an ultrasound-on-chip device, including attaching a multi-layer flex substrate to a carrier wafer, bonding a first side of an ultrasound-on-chip device to the multi-layer flex substrate, bonding a second side of the ultrasound-on-chip device to a first side of the interposer structure, and removing the carrier wafer.
Electronic device and method for manufacturing an electronic device
In an embodiment an electronic device includes a carrier board having an upper surface, an electronic chip mounted on the upper surface of the carrier board, the electronic chip having a mounting side facing the upper surface of the carrier board, a flexible mounting layer arranged between the upper surface of the carrier board and the mounting side of the electronic chip, the flexible mounting layer mounting the electronic chip to the carrier board, wherein the mounting side has at least one first region and a second region, and wherein the electronic chip has at least one chip contact element in the first region and at least one connection element arranged on the at least one first region and connecting the at least one chip contact element to the upper surface of the carrier board, wherein the flexible mounting layer separates the second region from the connection element.
Resonator electrode configuration to avoid capacitive feedthrough for vibrating beam accelerometers
This disclosure describes techniques of configuring capacitive comb fingers of an accelerometer resonator into discreet electrodes with drive electrodes and at least two sense electrodes. The routing of electrical signals is configured to produce parasitic feedthrough capacitances that are approximately equal. The sense electrodes may be placed on opposite sides of the moving resonator beams such that the changes in capacitance with respect to displacement (e.g. dC/dx) are approximately equal in magnitude and opposite in sign. The arrangement may result in sense currents that are also opposite in sign and result in feedthrough currents of the same sign. The sense outputs from the resonators may be connected to a differential amplifier, such that the difference in output currents may mitigate the effect of the feedthrough currents and cancel parasitic feedthrough capacitance. Parasitic feedthrough capacitance may cause increased accelerometer noise and reduced bias stability.
SENSOR PACKAGE WITH EMBEDDED INTEGRATED CIRCUIT
Provided is a sensor package with an integrated circuit embedded in a substrate and a sensor die on the substrate. The substrate includes a molding compound that has additives configured to respond to a laser. The integrated circuit is embedded in the molding compound. An opening is through the substrate and is aligned with the sensor die. A lid covers the sensor die and the substrate, forming a cavity. At least one trace is formed on a first surface of the substrate, on an internal sidewall of the opening and on a second surface of the substrate with a laser direct structuring process.
INTER-POLY CONNECTION FOR PARASITIC CAPACITOR AND DIE SIZE IMPROVEMENT
The present disclosure relates to a micro-electromechanical system (MEMS) structure including one or more semiconductor devices arranged on or within a first substrate and a MEMS substrate having an ambulatory element. The MEMS substrate is connected to the first substrate by a conductive bonding structure. A capping substrate is arranged on the MEMs substrate. The capping substrate includes a semiconductor material that is separated from the first substrate by the MEMS substrate. One or more conductive polysilicon vias include a polysilicon material that continuously extends from the conductive bonding structure, completely through the MEMS substrate, and to within the capping substrate. The semiconductor material of the capping substrate covers opposing sidewalls of the polysilicon material and an upper surface of the polysilicon material that is between the opposing sidewalls.