An integrated device package is disclosed. The package can include a package substrate comprising a composite die pad having an upper surface and a lower surface spaced from the upper surface along a vertical direction. The composite die pad can include an insulator die pad and a metal die pad. The insulator die pad and the metal die pad can be disposed adjacent one another along the vertical direction. The substrate can include a plurality of leads disposed about at least a portion of a perimeter of the composite die pad. An integrated device die can be mounted on the upper surface of the composite die pad.

A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.

A component which can be produced at wafer level has a first chip and a second chip connected thereto. The connection is (at least partially) established via a first and a second connecting structure and a first and a second contact structure of the second chip. An adaptation structure between the first chip and the first connecting structure equalizes a height difference between the first and the second contact structure.

A device includes a base substrate (700) with a micro component (702) attached thereto. Suitably it is provided with routing elements (704) for conducting signals to and from the component (702). It also includes spacer members (706) which also can act as conducting structures for routing signals vertically. There is a capping structure (708) of a glass material, provided above the base substrate (700), bonded via the spacer members (706), preferably by eutectic bonding, wherein the capping structure (708) includes vias (710) including metal for providing electrical connection through the capping structure. The vias can be made by a stamping/pressing method entailing pressing needles under heating to soften the glass and applying pressure, to a predetermined depth in the glass. However, other methods are possible, e-g- drilling, etching, blasting.

An embodiment method includes forming a first plurality of bond pads on a device substrate, depositing a spacer layer over and extending along sidewalls of the first plurality of bond pads, and etching the spacer layer to remove lateral portions of the spacer layer and form spacers on sidewalls of the first plurality of bond pads. The method further includes bonding a cap substrate including a second plurality of bond pads to the device substrate by bonding the first plurality of bond pads to the second plurality of bond pads.

Embodiments described herein provide for a sensing device including a sensor die attached to a header. The header has a first working surface composed of a first one or more electrically conductive pads and a bulk of the header. The sensor die has a second working surface and a third surface reverse of the second working surface. The sensor die includes a sensing element on the second working surface, and the third surface of the sensor die is composed of a second one or more electrically conductive pads and a dielectric layer. The first one or more electrically conductive pads of the header contact the second one or more electrically conductive pads of the sensor die, and the bulk of the header at the first working surface of the header contacts the dielectric layer of the third surface of the sensor die.

A microelectromechanical acceleration sensor system including a microelectromechanical acceleration sensor element for detecting acceleration values acting on the acceleration sensor element, a sigma-delta analog-to-digital converter for converting the analog output signals of the acceleration sensor element into digital output signals, and a first signal generator element and a second signal generator element. The first signal generator element is connected between the acceleration sensor element and the analog-to-digital converter and being configured to apply a predetermined signal value to the output signals of the acceleration sensor element. The signal value of the first signal generator element corresponding to an acceleration value that is greater than the average gravity acceleration, and the second signal generator element being connected in a signal processing direction downstream from the analog-to-digital converter and being configured to correct the digital output signals of the analog-to-digital converter by the signal value of the first signal generator element.

A semiconductor device package includes a carrier, a semiconductor device, a lid, a conductive post, a first patterned conductive layer, a conductive element disposed between the first conductive post and the first patterned conductive layer, and an adhesive layer disposed between the lid and the carrier. The conductive post is electrically connected to the first patterned conductive layer. The semiconductor device is electrically connected to the first patterned conductive layer. The lid is disposed on the carrier, and the lid includes a second patterned conductive layer electrically connected to the first conductive post.

A die-wrapped packaged device includes at least one flexible substrate having a top side and a bottom side that has lead terminals, where the top side has outer positioned die bonding features coupled by traces to through-vias that couple through a thickness of the flexible substrate to the lead terminals. At least one die includes a substrate having a back side and a topside semiconductor surface including circuitry thereon having nodes coupled to bond pads. One of the sides of the die is mounted on the top side of the flexible circuit, and the flexible substrate has a sufficient length relative to the die so that the flexible substrate wraps to extend over at least two sidewalls of the die onto the top side of the flexible substrate so that the die bonding features contact the bond pads.

A method includes: providing a first substrate on which a plurality of first semiconductor devices is formed; providing a second substrate on which a plurality of second semiconductor devices is formed; and coupling the first and second substrates by contacting respective dummy pads of the first and second substrates, wherein at least one of the dummy pads of the first and second substrates comprises plural peaks and valleys.