A package combining a MEMS substrate, a CMOS substrate and another MEMS substrate in one package that is vertically stacked is disclosed. The package comprises a sensor chip further comprising a first MEMS substrate and a CMOS substrate with a first surface and a second surface and where the first MEMS substrate is attached to the first surface of the CMOS substrate. The package further includes a second MEMS substrate with a first surface and a second surface, where the first surface of the second MEMS substrate is attached to the second surface of the CMOS substrate and the second surface of the second MEMS substrate is attached to a packaging substrate. The first MEMS substrate, the CMOS substrate, the second MEMS substrate and the packaging substrate are provided with electrical inter-connects.

An apparatus including a die including a first side and an opposite second side including a device side with contact points and lateral sidewalls defining a thickness of the die; a build-up carrier coupled to the second side of the die, the build-up carrier including a plurality of alternating layers of conductive material and insulating material, wherein at least one of the layers of conductive material is coupled to one of the contact points of the die; and at least one device within the build-up carrier disposed in an area void of a layer of patterned conductive material. A method and an apparatus including a computing device including a package including a microprocessor are also disclosed.

A method for producing micromechanical components is provided. A liquid starting material which can be cured by means of irradiation is applied onto a substrate. A partial volume of the starting material is cured by means of a local irradiation process using a first radiation source in order to produce at least one three-dimensional structure. The three-dimensional structure delimits at least one closed cavity in which at least one part of the liquid starting material is enclosed. Alternatively or in addition, a micromechanical component is provided that contains a liquid starting material, which is partly cured by means of irradiation, and at least one cavity in which the liquid starting material is enclosed.

A production method for a detection apparatus includes: forming at least one sensitive region having at least one exposed sensing area on and/or in a semiconductor substrate, encapsulating at least one part of the semiconductor substrate so that the at least one sensing area is sealed in an air-, liquid- and/or particle-tight fashion from an external environment, and forming at least one opening so that at least one air, liquid and/or particle access from the external environment to the at least one sensing area is created, wherein before forming the at least one opening, at least one first test and/or calibration measurement is performed, for which at least one sensor signal of the at least one sensitive region having the at least one sensing area sealed in an air-, liquid- and/or particle-tight fashion is determined as at least one first test and/or calibration signal. Also described are related detection apparatuses.

An apparatus including a die including a first side and an opposite second side including a device side with contact points and lateral sidewalls defining a thickness of the die; a build-up carrier coupled to the second side of the die, the build-up carrier including a plurality of alternating layers of conductive material and insulating material, wherein at least one of the layers of conductive material is coupled to one of the contact points of the die; and at least one device within the build-up carrier disposed in an area void of a layer of patterned conductive material. A method and an apparatus including a computing device including a package including a microprocessor are also disclosed.

An electronic device includes a package including a base and a lid body, and a physical quantity sensor having an element piece housed in the package; a circuit device that is electrically connected to the electronic component; an IC; a base; and a support member that supports the physical quantity sensor and the IC and is fixed to the base. The physical quantity sensor is disposed to be spaced apart from the base. The physical quantity sensor is suspended from the base in a direction in which the physical quantity sensor is spaced apart from the base.

Semiconductor devices with enclosed cavities and methods for fabricating semiconductor devices with enclosed cavities are provided. In an embodiment, a method for fabricating a semiconductor device with a cavity includes forming a sacrificial structure in and/or over a substrate. The method includes depositing a permeable layer over the sacrificial structure and the substrate. Further, the method includes etching the sacrificial structure through the permeable layer to form the cavity bounded by the substrate and the permeable layer.

Sensor device packages and related fabrication methods are provided. An exemplary sensor device package includes a first structure having a sensing arrangement thereon, a second structure having circuitry thereon, and a conductive structure within the first structure and coupled to the circuitry to provide an electrical connection to the circuitry through the first structure. Thus, circuitry on the second structure may be electrically connected to an interface of the sensor device package through the first structure.

Apparatuses relating generally to a substrate are disclosed. In such an apparatus, first wire bond wires (first wires) extend from a surface of the substrate. Second wire bond wires (second wires) extend from the surface of the substrate. The first wires and the second wires are external to the substrate. The first wires are disposed at least partially within the second wires. The first wires are of a first height. The second wires are of a second height greater than the first height for coupling of at least one electronic component to the first wires at least partially disposed within the second wires.

A high-aspect ratio low resistance through-wafer interconnect for double-sided (TWIDS) fabrication of microelectromechanical systems (MEMS) serves as an interconnection method and structure for co-integration of MEMS and integrated circuits or other microcomponent utilizing both sides of the wafer. TWIDS applied to a three dimensional folded TIMU (timing inertial measurement unit) provides a path for electrical signals from sensors on the front side of the SOI wafer to electronic components on the back side of the wafer, while enabling folding of an array of sensors in a three dimensional shape.