A device includes: a first sidewall including a first opening extending through the first sidewall; a first sensor attached to an interior surface of the first sidewall, wherein the first sensor is aligned to at least partially cover the first opening; a second sidewall opposite the first sidewall; a third sidewall attaching the first sidewall to the second sidewall; and a first contact pad disposed on an exterior surface of the third sidewall, wherein the first contact pad is configured to provide at least one of a power connection or a signal connection for the first sensor.

A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.

A method for operating an electronic device comprising a first and second MEMS device and a semiconductor substrate disposed upon a mounting substrate includes subjecting the first MEMS device and the second MEMS device to physical perturbations, wherein the physical perturbations comprise first physical perturbations associated with the first MEMS device and second physical perturbations associated with the second MEMS device, wherein the first physical perturbations and the second physical perturbations are substantially contemporaneous, determining in a plurality of CMOS circuitry formed within the one or more semiconductor substrates, first physical perturbation data from the first MEMS device in response to the first physical perturbations and second physical perturbation data from the second MEMS device in response to the second physical perturbations, determining output data in response to the first physical perturbation data and to the second physical perturbation data, and outputting the output data.

A wiring-buried glass substrate includes a glass substrate and a first wiring. The glass substrate includes a first surface, a second surface perpendicular to the first surface, and a third surface facing the first surface. The first wiring includes a first pillar portion and a first beam portion. The first pillar portion extends in a first direction perpendicular to the first surface of the glass substrate. The first beam portion is connected to a first surface of the first pillar portion and extends to a second direction perpendicular to a second surface of the glass substrate. The first wiring is buried in the glass substrate. The first surface of the first beam portion is exposed from a third surface of the glass substrate.

A device includes: a first sidewall including a first opening extending through the first sidewall; a first sensor attached to an interior surface of the first sidewall, wherein the first sensor is aligned to at least partially cover the first opening; a second sidewall opposite the first sidewall; a third sidewall attaching the first sidewall to the second sidewall; and a first contact pad disposed on an exterior surface of the third sidewall, wherein the first contact pad is configured to provide at least one of a power connection or a signal connection for the first sensor.

Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.

The present disclosure relates to semiconductor structures and, more particularly, to seal ring structures with channels and methods of manufacture. The structure includes: a first wafer having a channel formed within a passivation layer; a second wafer having a protuberance which is insertable into the channel and which is bonded to the first wafer with eutectic bonding materials; and a plurality of stoppers or tabs extending within the channel and which provides a gap that has a dimension smaller than a gap formed in other portions of the channel.

A device and method for manufacturing a device comprising two semiconductor dice. The device is formed by a first die and a second die. The first die is of semiconductor material and integrates electronic components. The second die has a main surface, forms patterned structures, and is bonded to the first die. Internal electrical coupling structures electrically couple the main surface of the first die to the second die. External connection regions extend on the main surface of the first die. A package packages the first die, the second die and the internal electrical coupling structures and partially surrounds the external connection regions, the external connection regions partially protruding from the package.

A method for making an integrated micro-electromechanical device includes forming a first body of semiconductor material having a first face and a second face opposite the first face. The first body includes a buried cavity forming a diaphragm delimited between the buried cavity and the first face. The diaphragm is monolithic with the first body. The method further includes forming at least one first magnetic via extending between the second face and the buried cavity of the first body, forming a first magnetic region extending over the first face of the first body, and forming a first coil extending over the second face of the first body and being magnetically coupled to the first magnetic via.

A semiconductor device package includes a carrier, a first semiconductor device disposed on the carrier, a second semiconductor device disposed on the first semiconductor device, a conductive wire electrically connecting the first semiconductor device to the carrier, and an encapsulant encapsulating the first semiconductor device, the second semiconductor device and the conductive wire. The second semiconductor device defines a hole. The encapsulant exposes the hole. An apex of the conductive wire is lower than a surface of the second semiconductor device by a first distance (s). The apex of the conductive wire is spaced from the first surface of the encapsulant by a second distance (t). A first surface of the encapsulant is lower than a surface of the second semiconductor device by a third distance (D). The third distance is less than or equal to a difference between the first distance and the second distance.