B81B7/0077

Enclosed cavity structures

An example of a cavity structure comprises a cavity substrate comprising a substrate surface, a cavity extending into the cavity substrate, the cavity having a cavity bottom and cavity walls, and a cap disposed on a side of the cavity opposite the cavity bottom. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume. A component can be disposed in the cavity and can extend above the substrate surface. The component can be a piezoelectric or a MEMS device. The cap can have a tophat configuration. The cavity structure can be micro-transfer printed from a source wafer to a destination substrate.

CMOS ULTRASONIC TRANSDUCERS AND RELATED APPARATUS AND METHODS

CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.

Multiple silicon trenches forming method for MEMS sealing cap wafer and etching mask structure thereof

A multiple silicon trenches forming method and an etching mask structure, the method comprises: step S11, providing a MEMS sealing cap silicon substrate (100); step S12, forming n stacked mask layers (101, 102, 103) on the MEMS sealing cap silicon substrate (100), after forming each mask layer, photolithographing and etching the mask layer and all other mask layers beneath the same to form a plurality of etching windows (D1, D2, D3); step S13, etching the MEMS sealing cap silicon substrate by using the current uppermost mask layer and a layer of mask material beneath the same as a mask; step S14, removing the current uppermost mask layer; step S15, repeating the step S13 and the step S14 until all the n mask layers are removed. The present invention can form a plurality of deep trenches with high aspect ratio on the MEMS sealing cap silicon substrate using conventional semiconductor processes, avoiding the problem that the conventional spin coating cannot be conducted on a sealing cap wafer with deep trenches using photoresist.

Semiconductor package with air pressure sensor

A semiconductor package having an air pressure sensor and methods to form a semiconductor package having an air pressure sensor are described. For example, a semiconductor package includes a plurality of build-up layers. A cavity is disposed in one or more of the build-up layers. An air pressure sensor is disposed in the plurality of build-up layers and includes the cavity and an electrode disposed above the cavity.

CMOS ULTRASONIC TRANSDUCERS AND RELATED APPARATUS AND METHODS

CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.

Multiaxis sensing system for detection of airborne molecules and radionuclides

Various technologies presented herein relate to a method and equipment for detecting both airborne radioisotope and molecular effluent gases. Multi-Axis Sensing can be conducted by utilizing a pressurized MOF sorbent, such as a scintillating Metal-Organic Frameworks (S-MOFs). These MOFs are crystalline nanoporous materials that have synthetic versatility that allow adjustment of pore size, chemical environment, and luminescence properties. A method for detecting an analyte in a fluid sample is provided that comprises: loading a sorbent with a sample fluid, wherein the sorbent comprises a MOF material; pressurizing the sample fluid to increase the fluid in the sorbent thereby making a pressurized sorbent; and detecting ionizing radiation or a chemical property of the analyte in the pressurized sorbent.

MICRO ELECTRO-MECHANICAL SYSTEMS PACKAGE AND MANUFACTURING METHOD

A micro electro-mechanical systems (MEMS) package includes a first substrate on which at least one connection pad is disposed; a second substrate disposed adjacent to the first substrate; an element unit disposed on one surface of the second substrate; a connecting member connected to the connection pad and a metal pad included in the element unit; a sealing layer which encloses the second substrate; an insulating layer which covers the sealing layer; a redistribution layer connected to the connection pad; and an external connection terminal connected to the redistribution layer and exposed externally from the insulating layer. The element unit is spaced apart from the first substrate, the external connection terminal is exposed externally from the insulating layer disposed on a surface of the package that is opposite to a surface thereof on which the first substrate is disposed.

Sensor package including a substrate with an inductor layer
11912564 · 2024-02-27 · ·

A sensor package can include a substrate including a plurality of layers. The plurality of layers can include a first pair of layers and a second pair of layers different from the first pair of layers. The substrate can have a first side and a second side opposite the first side. The sensor package can include a transducer coupled to the second side of the substrate. The sensor package can include an inductor electrically coupled to the transducer. The inductor can be configured as a single layer trace on an inductor layer within the substrate and disposed between the first pair of layers within the substrate. The first pair of layers can be more distal from the second side of the substrate than the second pair of layers.

Enclosed cavity structures

An example of a cavity structure comprises a cavity substrate comprising a substrate surface, a cavity extending into the cavity substrate, the cavity having a cavity bottom and cavity walls, and a cap disposed on a side of the cavity opposite the cavity bottom. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume. A component can be disposed in the cavity and can extend above the substrate surface. The component can be a piezoelectric or a MEMS device. The cap can have a tophat configuration. The cavity structure can be micro-transfer printed from a source wafer to a destination substrate.

Sensing module and manufacturing method thereof
11894473 · 2024-02-06 · ·

The invention relates to a sensing module and a manufacturing method thereof, which firstly provides a transparent substrate, and then a sensor, a colloid, and an optical cover body disposed on a first surface of the transparent substrate. The colloid is surrounded the encrypted chip and is connected with the transparent substrate and the optical cover. Finally, a light source irradiates the colloid through a second surface of the transparent substrate to cure the colloid for obtaining the sensing module.