A method of forming an infrared detector includes defining an optical window in a cover substrate. Defining the optical window includes forming a multilayer interference filter or a periodic diffraction grating on an upper surface of the optical window and a periodic diffraction grating on the lower surface of the optical window. The method also includes performing anodic bonding of a spacer onto the cover substrate, transferring the cover substrate provided onto a base substrate, and hermetically bonding the spacer onto the base substrate.

Some embodiments include methods of manufacturing a plurality of MEMS devices, each device including a first material and a second material with different CTE. The method includes providing a carrier with substantially equal CTE as the first material, the carrier comprising a plurality of cavities. The method also includes positioning a plurality of components in respective cavities of the carrier, the components comprising the second material. In some embodiments, the method includes positioning a layer of the first material on the second material components. In some embodiments, the method includes bonding the first material layer and the second material components. The method also includes removing the carrier and singulating the first material layer to produce the plurality of MEMS devices.

An electromechanical systems structure including: providing a stack, including a structural layer extending in a plane, a sidewall layer including a first portion lying in a plane parallel to the structural layer plane and a second portion lying in a plane transverse to the structural layer plane, an etch-stop layer, positioned between the sidewall layer and the structural layer, including an etch-selectivity different from an etch-selectivity of the structural layer and an etch-selectivity of the sidewall layer, and a mold comprising a wall parallel to the sidewall layer's second portion; etching the sidewall layer's first portion to expose the etch-stop layer; removing the mold; etching the etch-stop layer such that the sidewall layer's second portion masks a portion of the etch-stop layer; removing the sidewall layer's second portion; and etching the structural layer such that the portion of the etch-stop layer masks a portion of the structural layer.

A method for attaching a bridging metal layer in supporting post via holes in an integrated circuit device is provided. The method include: (A) providing an integrated circuit wafer with a first coating layer as the outermost layer; (B) forming a sacrificial layer on the first coating layer and then forming a dielectric supporting layer on the sacrificial layer to obtain multiple supporting post via holes; (C) forming a bridging metal layer in the supporting post via holes and then forming a second coating layer; and (D) forming a connecting metal layer on the bridging metal layer and then forming a third coating layer on the bridging metal layer to obtain multiple supporting posts.

An electronic device is provided. An example electronic device includes: a support structure including a substrate of dielectric material, a top conductive structure, arranged above the substrate, and a bottom conductive structure, arranged below the substrate, the top conductive structure including an annular region, the bottom conductive structure including an array of contacts; a cap coupled to the annular region such that the cap and the support structure delimit a cavity; and at least one semiconductive die in the cavity that generates one or more electric output signals. The array of contacts includes: signal contacts, which receive corresponding electric output signals or electric signals generated outside the electronic device; and reference contacts set to a reference potential. The electronic device further includes a plurality of reinforcement conductive vias, each extending through the substrate and has ends fixed respectively to the annular region and to a corresponding reference contact.

An electromechanical systems structure including: providing a stack, including a structural layer extending in a plane, a sidewall layer including a first portion lying in a plane parallel to the structural layer plane and a second portion lying in a plane transverse to the structural layer plane, an etch-stop layer, positioned between the sidewall layer and the structural layer, including an etch-selectivity different from an etch-selectivity of the structural layer and an etch-selectivity of the sidewall layer, and a mold comprising a wall parallel to the sidewall layer's second portion; etching the sidewall layer's first portion to expose the etch-stop layer; removing the mold; etching the etch-stop layer such that the sidewall layer's second portion masks a portion of the etch-stop layer; removing the sidewall layer's second portion; and etching the structural layer such that the portion of the etch-stop layer masks a portion of the structural layer.