A microphone with a combined packaging structure includes: a substrate, a first cover being provided on top of the substrate, the substrate, together with the first cover, forms a first accommodating cavity, an acoustic sensor being provided inside the first accommodating cavity, and an acoustic through-hole being formed in the first accommodating cavity. A second cover is provided on a back face of the substrate, the second cover, together with the substrate, forms a second accommodating cavity, and a proximity sensor is arranged inside the second accommodating cavity. By adopting the above-mentioned technical solutions, the present invention has the beneficial effects that two accommodating cavities are respectively provided on the top and bottom of the substrate in the microphone according to the present invention, for receiving components of a MEMS microphone and the components of a proximity sensor respectively.

A method of forming an infrared detector includes defining an optical window in a cover substrate. Defining the optical window includes forming a multilayer interference filter or a periodic diffraction grating on an upper surface of the optical window and a periodic diffraction grating on the lower surface of the optical window. The method also includes performing anodic bonding of a spacer onto the cover substrate, transferring the cover substrate provided onto a base substrate, and hermetically bonding the spacer onto the base substrate.

A distributed sensor system is disclosed that provides spatial and temporal data in an operating environment. The distributed sensor nodes can be coupled together to form a distributed sensor system. For example, a distributed sensor system comprises a collection of Sensor Nodes (SN) that are physically coupled and are able to collect data about the environment in a distributed manner. For example, a first sensor node and a second sensor node is formed respectively in a first region and a second region of the semiconductor substrate. A flexible interconnect is formed overlying the semiconductor substrate and couples the first sensor node to the second sensor node. A portion of the semiconductor substrate is removed by etching beneath the flexible interconnect such that the distributed sensor system has multiple degrees of freedom that support following surface contours or sudden changes of direction.

A process for manufacturing a detection device having at least one thermal detector covered by a mineral sacrificial layer, at least one getter portion covered by a carbon-based sacrificial layer, and a thin encapsulation layer surrounding the thermal detector and the getter portion includes a making a through-opening extending through the mineral sacrificial layer and opening on the substrate. The carbon-based sacrificial layer is deposited so as to cover the getter portion located in the through-opening and to entirely fill the through-opening.

A distributed sensor system is disclosed that provides spatial and temporal data in an operating environment. The distributed sensor nodes can be coupled together to form a distributed sensor system. For example, a distributed sensor system comprises a collection of Sensor Nodes (SN) that are physically coupled and are able to collect data about the environment in a distributed manner. For example, a first sensor node and a second sensor node is formed respectively in a first region and a second region of the semiconductor substrate. A flexible interconnect is formed overlying the semiconductor substrate and couples the first sensor node to the second sensor node. A portion of the semiconductor substrate is removed by etching beneath the flexible interconnect such that the distributed sensor system has multiple degrees of freedom that support following surface contours or sudden changes of direction.

An integrated circuit assembly including a first wafer bonded to a second wafer with an oxide layer, wherein a first surface of the first wafer is bonded to a first surface of the second wafer. The assembly can include a bonding oxide on a second surface of the second wafer, wherein a surface of the bonding oxide is polished. The assembly can further include a shim secured to the bonding oxide on the second surface of the second wafer to reduce bow of the circuit assembly.

A microelectromechanical infrared sensing device is provided, which includes a substrate, a sensing plate, a reflecting plate, a plurality of first supporting elements, a plurality of second supporting elements and a plurality of stoppers. The second supporting elements are connected to the sensing plate, such that the sensing plate is suspended above the substrate. The reflecting plate is disposed between the substrate and the sensing plate. The first supporting elements are connected to the reflecting plate, such that the reflecting plate is suspended between the substrate and the reflecting plate. When the reflecting plate moves toward the substrate and at least one of the stoppers contacts the substrate or the reflecting plate, the distance between the reflecting plate and the sensing plate increases.

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

A hermetic housing is disclosed (10a) for an optoelectronic component (11) or a MEMS device configured to form an enclosure (12) within which a low pressure or vacuum prevails. The hermetic housing includes: an optical window (14) transparent for at least one wavelength of interest (λ); and a layer of a getter material (15a) configured to capture gases present in said enclosure and deposited on the optical window opposite the enclosure. This layer of getter material has a thickness (e_t), greater than 60 nanometers, and a porosity (P) in the range from 10 to 70% to satisfy the following relation: (1−P)*e_t<λ/2πk with λ corresponding to the at least one wavelength of interest, and k corresponding to the extinction coefficient of the material of the layer of getter material for the at least one wavelength of interest of the optical window.

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.