A bonding pad layer system is deposited on a semiconductor chip as a base, for example, a micromechanical semiconductor chip, in which at least one self-supporting dielectric membrane made up of dielectric layers, a platinum conductor track and a heater made of platinum is integrated. In the process, the deposition of a tantalum layer takes place first, upon that the deposition of a first platinum layer, upon that the deposition of a tantalum nitride layer, upon that the deposition of a second platinum layer and upon that the deposition of a gold layer, at least one bonding pad for connecting with a bonding wire being formed in the gold layer. The bonding pad is situated in the area of the contact hole on the semiconductor chip, in which a platinum conductor track leading to the heater is connected using a ring contact and/or is connected outside this area.

Embodiments of the present disclosure provide methods of forming solid state dual pore sensors which may be used for biopolymer sequencing and dual pore sensors formed therefrom. In one embodiment, a method of forming a dual pore sensor includes providing a pattern in a surface of a substrate. Generally, the pattern features two fluid reservoirs separated by a divider wall. The method further includes depositing a layer of sacrificial material into the two fluid reservoirs, depositing a membrane layer, patterning two nanopores through the membrane layer, removing the sacrificial material from the two fluid reservoirs, and patterning one or more fluid ports and a common chamber.

One disclosed method includes defining an electrical trace on a first substrate; physically coupling an electronic component to the first substrate, wherein a portion of the electrical trace completely encircles the electronic component; overlaying a second substrate onto the first substrate, the overlaying causing the second substrate to completely cover the portion of the electrical trace and the electronic component; electrically coupling an electrical power source to the electrical trace to generate a current in the electrical trace; melting the second substrate using heat generated by the current through the electrical trace; and fusing the second substrate to the first substrate to generate a hermetic seal around the electronic component.

A sensing module, a semiconductor device package and a method of manufacturing the same are provided. The sensing module includes a sensing device, a first protection film and a second protection film. The sensing device has an active surface and a sensing region disposed adjacent to the active surface of the sensing device. The first protection film is disposed on the active surface of the sensing device and fully covers the sensing region. The second protection film is in contact with the first protection film and the active surface of the sensing device.

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

A waterproofed environmental sensing device with water detection provisions includes an environmental sensor to sense one or more environmental properties. The device further includes an electronic integrated circuit implemented on a substrate and coupled to the environmental sensor via a wire bonding. An air-permeable cap structure is formed over the environmental sensor, and a protective layer is formed over the wire bonding to protect the wire bonding against damage.

A MEMS component includes a semiconductor substrate stack having a first semiconductor substrate and a second semiconductor substrate, wherein the semiconductor substrate stack has a cavity formed within the first and second semiconductor substrates, and wherein at least the first or the second semiconductor substrate has an access opening for gas exchange between the cavity and an environment. A radiation source is arranged at the first semiconductor substrate, and a radiation detector is arranged at the second semiconductor substrate. Two mutually spaced apart reflection elements are arranged in a beam path between the radiation source and the radiation detector, wherein one reflection element is partly transmissive to the emitted radiation from the cavity in the direction of the radiation detector, and wherein an interspace between the two mutually spaced apart reflection elements has a length that is at least ten times the wavelength of the emitted radiation.

Apparatus and associated methods relate to a compact gas sensor (CGS) including a housing with a central stepped cavity with one or more first lead contact(s) forming a portion of a base plane in a bottom of the cavity and one or more second lead contact(s) forming a portion of a stepped plane higher than the base plane, the cavity sized to receive a chemically based stack of material made up of a bottom diffusion electrode layer, a middle electrolyte gel layer, and a top diffusion electrode layer. The bottom diffusion electrode layer is in electrical contact with the first lead contact(s). The top diffusion electrode layer electrically couples to the second lead contact(s) via an overlaying micro electromechanical system (MEMS) element layer with conductive coating. In an illustrative example, the CGS may provide gas sensing in small spaces.

Provided are a semiconductor device and a thermal type fluid flow rate sensor which suppress strain occurring in an aluminum film and suppresses disconnection due to repeated metal fatigue of the aluminum film. The semiconductor device and the thermal type fluid flow rate sensor of the present invention are configured so that the heights of a silicon film and an aluminum film satisfy D>D1 between a flow rate sensor part (immediately above a diaphragm end part) D and a circuit part (LSI part) D1.

A micro-electro-mechanical system (MEMS) package structure and a method of fabricating the MEMS package structure. The MEMS package structure includes a MEMS die (210,220) and a device wafer (100). A control unit and an interconnection structure (300) are formed in the device wafer (100), and a first contact pad (410) is formed on a first surface (100a) of the device wafer. The MEMS die (210,220) includes a micro-cavity (221), a second contact pad (201) configured to be coupled to an external electrical signal, and a bonding surface (200a,220a). The micro-cavity (221) of the MEMS die (210,220) is provided with a through hole (221a) in communication with the exterior of the die. The MEMS die (210,220) is bonded to the first surface (100a) by a bonding layer (500), in which an opening (510) is formed. The first contact pad (410) is electrically connected to the second contact pad (201), and a rewiring layer (700) is arranged on a second surface (100b) opposing the first surface (100a). The MEMS package structure allows electrical interconnection between the MEMS die and the device wafer with a reduced package size, compared to those produced by existing integration techniques. In addition, a plurality of MEMS dies of the same or different structures and functions are allowed to be integrated on the same device wafer.